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11.
Single pulse doped, 0.2 μm-gate Al0.60In0.40 As/GaInAs/InP HEMTs have been fabricated and characterised. The complete process sequence for the HEMTs includes SiNx passivation and dry etched via hole fabrication. Power measurements at 44 GHz on a 10×60 μm2 device yielded 225 mW output power, 5 dB associated gain, and 39% power added efficiency. The results indicate that the single pulse doped InP-based HEMTs are suitable for high power applications at Q-band  相似文献   
12.
This letter presents a smart integrated microfluidic device which can be applied to actively immobilize proteins on demand. The active component in the device is a temperature‐controllable microelectrode array with a smart polymer film, poly(N‐isopropylacrylamide) (PNIPAAm) which can be thermally switched between hydrophilic and hydrophobic states. It is integrated into a micro hot diaphragm having an integrated micro heater and temperature sensors on a 2‐micrometer‐thick silicon oxide/silicon nitride/silicon oxide (O/N/O) template. Only 36 mW is required to heat the large template area of 2 mm×16 mm to 40°C within 1 second. To relay the stimulus‐response activity to the microelectrode surface, the interface is modified with a smart polymer. For a model biomolecular affinity test, an anti‐6‐(2, 4‐dinitrophenyl) aminohexanoic acid (DNP) antibody protein immobilization on the microelectrodes is demonstrated by fluorescence patterns.  相似文献   
13.
GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here  相似文献   
14.
The recent technological and industrial revolution dictates a new approach in constructing Korean Information Infrastructure. Lacking past data on the newly emerging markets, econometrics methodologies cannot accurately forecast future paths of advanced networks, let alone dynamic impacts of public policies. In this paper, we have built a system dynamics model of the Korean Information Infrastructure and simulated diverse policy measures including market integration and government initiative in investment for experimenting their effectiveness. The most counterintuitive result of our research is that the market integration policy will facilitate CATV networks at an early stage until the year 2010, but will result in a diminished market size in the long run. With the system dynamics approach, we can enhance our understanding of the complex policy systems and get valuable insights through learning by modeling and simulation.  相似文献   
15.
A simultaneous measurement technique of the dispersion parameter and the length of an optical fiber has been demonstrated by using the self-seeding laser oscillation of a Fabry-Perot laser diode. We measured the dispersion parameter and the length of an optical fiber from the modulation frequency changes required to induce single-mode laser oscillations through an optical closed-loop path. The dispersion and fiber length measurements were within 1.5% and 0.2%, respectively, of the values measured by commercial instruments.  相似文献   
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