Transmission performance of 10-Gb/s 1550-nm transmitters using semiconductor optical amplifiers as booster amplifiers

We have demonstrated the transmission performance of 10-Gb/s transmitters based on LiNbO/sub 3/ modulator using semiconductor optical amplifiers (SOAs) as booster amplifiers. Utilizing the negative chirp converted in SOAs and self-phase modulation induced by high optical power, we can successfully transmit 10-Gb/s optical signals over 80 km through the standard single-mode fiber with the transmitter using SOAs as booster amplifiers. SOAs can be used for booster amplifiers with a careful adjustment of the operating conditions. In order to further understand an SOA's characteristics as a booster amplifier, we model SOAs and other subsystems to verify the experimental results. Based on the good agreement between the experimental and simulation results, we can find the appropriate parameters of input signals for SOAs, such as extinction ratio, rising/falling time, and chirp parameter to maximize output dynamic range and available maximum output power (P/sub o,max/).     

Simple K-band MMIC VCO utilizing a miniaturized hairpin resonator and a three-terminal p-HEMT varactor with low phase noise and high output power properties

Presents a fully monolithic K-band MMIC voltage-controlled oscillator (VCO) implemented by using a 0.25 /spl mu/m AlGaAs/InGaAs pseudomorphic HEMT (p-HEMT) technology. The use of a half-wavelength miniaturized hairpin-shaped resonator and a three-terminal p-HEMT varactor was effective in reducing the chip size and simplifying fabrication processes of the microwave MMIC VCO without impairing the performance of the circuit. The VCO provides a typical output power of 11.5 dBm at 20.8 GHz and a free-running phase noise of -82 dBc/Hz at 100 kHz offset and -95 dBc/Hz at 1 MHz offset. It also shows a tuning range of 70 MHz with little reduction in output power and high yield properties. The chip size of the MMIC VCO is 1.5 /spl times/ 2.0 mm/sup 2/.     

A printer model using signal processing techniques

An accurate printer model that is efficient enough to be used by halftoning algorithms is proposed. The proposed signal processing model (SPM) utilizes a physical model to train adaptive linear combiners (ALCs), after which the average exposure of each subpixel for any input pattern can be calculated using the optimized weight vector. The SPM can be used to model multi-level halftoning and resolution enhancement, as well as traditional halftoning. The SPM is comprised of a single ALC layer followed by a peak-to-average ratio (PAR) correction layer, which serves to produce a PAR of less than 1.5 in the modeled exposure. The PCN (PAR correction network) employs one ALC/pixel and exploits the physics governing the characteristics of exposure in small regions. A relatively small number of training patterns suffices to train the SPM.     

Virtual fine delay line using one-stage inverter delay

A virtual fine delay line (VFDL) using only two ring oscillators and counters can cover a wide frequency operation range clock without adding any additional delay line stage. The proposed ring oscillator can easily make a unit delay as a one-stage inverter. The VFDL achieves fine resolution of less than 60 ps and small circuit area with two clock cycles lock-in time.     

互调干扰信号的特征识别

在复杂电磁信号环境中,实际存在为数不少的互调干扰信号,对这类信号的有效分析识别,是无线电监测工作需要重点关注解决的难题。对互调干扰信号在幅度特征和频谱峰值特征两个方面的特性进行了分析,给出了互调干扰信号识别的思路。     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

Small‐Sized High‐Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet

This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.     

High efficiency red phosphorescent organic light-emitting diodes using a spirobenzofluorene type phosphine oxide as a host material

High efficiency red phosphorescent organic light-emitting diodes have been developed using a spirobenzofluorene type phosphine oxide (SPPO2) as a host material. The SPPO2 had a high glass transition temperature of 119 °C and a smooth surface morphology with a surface roughness less than 1 nm. The red device with the SPPO2 as a host showed a quantum efficiency of 14.3% with a current efficiency of 20.4 cd/A.     

Wireless Energy Transfer System with Multiple Coils via Coupled Magnetic Resonances

A general equivalent circuit model is developed for a wireless energy transfer system composed of multiple coils via coupled magnetic resonances. To verify the developed model, four types of wireless energy transfer systems are fabricated, measured, and compared with simulation results. To model a system composed of n‐coils, node equations are built in the form of an n‐by‐n matrix, and the equivalent circuit model is established using an electric design automation tool. Using the model, we can simulate systems with multiple coils, power sources, and loads. Moreover, coupling constants are extracted as a function of the distance between two coils, and we can predict the characteristics of a system having coils at an arbitrary location. We fabricate four types of systems with relay coils, two operating frequencies, two power sources, and the function of characteristic impedance conversion. We measure the characteristics of all systems and compare them with the simulation results. The flexibility of the developed model enables us to design and optimize a complicated system consisting of many coils.     

Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric

Low‐power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of Things era. Molybdenum disulfide (MoS₂) is a 2D material that is increasingly regarded as a promising semiconductor material in electronic device applications because of its unique physical characteristics. However, dielectric formation of an ultrathin low‐k tunneling on the dangling bond‐free surface of MoS₂ is a challenging task. Here, MoS₂‐based low‐power nonvolatile charge storage memory devices are reported with a poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) tunneling dielectric layer formed via a solvent‐free initiated chemical vapor deposition (iCVD) process. The surface‐growing polymerization and low‐temperature nature of the iCVD process enable the conformal growing of low‐k (≈2.2) pV3D3 insulating films on MoS₂. The fabricated memory devices exhibit a tunable memory window with high on/off ratio (≈10⁶), excellent retention times of 10⁵ s with an extrapolated time of possibly years, and an excellent cycling endurance of more than 10³ cycles, which are much higher than those reported previously for MoS₂‐based memory devices. By leveraging the inherent flexibility of both MoS₂ and polymer dielectric films, this research presents an important milestone in the development of low‐power flexible nonvolatile memory devices.