Methods of Step-by-Step Modeling of Random Events

Calculation relations were obtained and step-by-step procedures were developed in order to model failures of given multiplicities in system elements and random sojourns of the semi-Markovian process in various states, as well as to construct variational series. These procedures can be used to design simulation systems of various destinations.     

Group parity prediction scheme for concurrent testing of linear feedback shift registers

A group parity prediction scheme which can be used for concurrent testing of linear feedback shift register circuits is described.     

Error of measurement of coolant temperature in VVÉR-440 reactor

Translated from Atomnaya Énergiya, Vol. 67, No. 5, pp. 358–359, November, 1989.     

Features of the photoconductivity of iodine-doped cotton fibers illuminated in the fundamental absorption range

The photoelectric properties of cotton fibers treated with iodine were studied in the fundamental absorption range. The samples exhibit a sublinear illumination-current characteristic and a long-term relaxation of photoconductivity (PC) after UV irradiation (hν=5 eV) of the iodine-doped fibers. A PC mechanism is proposed which explains both the nonlinear variation of photocurrent with illumination intensity and the PC decay according to a bimolecular recombination law after UV irradiation of the iodine-doped fiber in the fundamental absorption range.     

Methods for Estimating Theoretically the Influence of Ion Scattering and Reflection on the Isotopic Sensitivity of Static Magnetic Mass-Spectrometers

For purposes of optimizing ion-optical systems, analyzer construction, and pump placement in static magnetic mass-spectrometers for isotopic analysis of uranium compounds, a comparative analysis is made and a review is given of methods described in the literature for theoretical estimates of the influence of scattering and reflection of ions on the isotopic sensitivity. Conclusions which make it possible to solve the problem are drawn.     

Formation and elimination of surface ion milling defects in cadmium telluride,zinc sulphide and zinc selenide

The nature of damage produced by low energy Ar⁺ ion and Ar atom milling in the II–VI semiconductors CdTe, ZnS and ZnSe is studied in detail by conventional and high resolution transmission electron microscopy. It is demonstrated that the damage consists of dense arrays of small dislocation loops near to each milled surface. When ion or atom milling of this type is used for thin specimen preparation prior to microscopy the loop arrays can seriously obscure images and so complicate their interpretation. This problem concerning the presence of artifactual defects can be greatly reduced by the use of reactive I⁺ ion milling for specimen thinning and, in the case of CdTe, spurious dislocation loop formation can be completely suppressed.     

Improving stability of high-viscosity marine fuels based on residual fractions

Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 2, pp. 22–24, February, 1989.     

Test of the KÉ-250-ShS machine for twisting acetate yarn

Conclusions An attempt has been made to use the KÉ-250-ShS machine for twisting acetate yarns.It has been found that in developing a new twisting machine it is advisable to use a checkerboard disposition of the spindles in its lower part with the objective of reducing the noise level, and also to use pedal braking to stop the spindles. This helps increase the productivity of twister labor, and mechanization and automation of operations associated with transfer in removing packages of weight not less than 3 kg.Translated from Khimicheskie Volokna, No. 6, pp. 40–41, November–December, 1985.