Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

Temperature waves in a horizontal liquid layer cooled from above

Waves in a thermal boundary layer were obtained by numerically modeling the natural thermogravitational convection in the infinite horizontal layer of a liquid cooled from above. The waves are generated via a mechanism related to the loss of stability and periodic separation of the upper, heavier and cooler liquid layer (penetrative convection).     

Quantum Critical Ferromagnetism in Ni x Pd1- x Alloys

We analyze the non-Fermi liquid behavior in the proximity of the quantum phase transition induced by the strong polarization of the electrons due to local magnetic moments in Ni _x Pd_1-x alloys. We use the renormalization group approach introduced by Hertz–Mi11is–Moriya (HMM) to estimate the temperature dependence of the electrical resistivity for the case of three dimensional itinerant ferromagnets. We study two different cases, namely, the clean and disordered ferromagnets, and argue that at the present time more experimental data are needed to decide if the HMM theory can accurately describe the physical properties in Ni _x Pd_1-x alloys.     

Point Contact Spectroscopy and Temperature Dependence of Resistivity of Metallic Sodium Tungsten Bronzes - Role of Optical Phonons

In this paper we report the results of electrical resistivity (1.5≤ T ≤ 300K) and point contact spectroscopy (PCS) measurements on single crystals of metallic sodium tungsten bronze with varying sodium content. We have shown that the electron-phonon coupling function as measured through PCS can explain quantitatively the large temperature dependence of resistivity ρ seen in these materials over the entire temperature range. The electron-phonon coupling function shows predominately large peaks for phonon frequency range of 30 meV ≤ ω ≤ 100 meV which match well with the calculated optical phonons for WO₆ octahedron. The integrated electron-phonon coupling constant λ from this data is ≈ 0.25-0.45, depending on the Na content. PACS numbers: 72.15.-v, 72.80.Ga     

Atomistic simulations of the solubilization of single-walled carbon nanotubes in toluene

Solubilization of the armchair, metallic (10,10) single-walled carbon nanotubes (SWCNTs) in toluene is modeled using molecular dynamics simulations. Inter- and intra-molecular atomic interactions in the SWCNT + toluene system are represented using COMPASS (Condensed-phased Optimized Molecular Potential for Atomistic Simulation Studies), the first ab initio forcefield that enables an accurate and simultaneous prediction of various gas-phase and condensed-phase properties of organic and inorganic materials.The results obtained show that due to a significant drop in the configurational entropy of toluene, the solvation Gibbs free energy for these nanotubes in toluene is small but positive suggesting that a suspension of these nanotubes in toluene is not stable and that the nanotubes would fall out of the solution. This prediction is consistent with experimental observations.     

The coating of cadmium compounds with copper compounds

Fine particles of cadmium carbonate (CdCO₃) were prepared by heating aqueous solutions containing dissolved urea and cadmium sulfate at 85°C for 1 h. Effect of the composition of the reactant mixture on the morphology of the precipitated particles was investigated. It was found that the cadmium sulfate content of the reactant mixture significantly affected the shape and size of the precipitated particles. At certain range of reactant mixture composition, cauliflower-shaped uniform particles were obtained. The later particles were coated with basic copper carbonate (Cu₂(OH)₂CO₃) by heating aqueous dispersions, containing CdCO₃ particles, copper (II) nitrate, and urea at 85°C for various periods of time with constant stirring. The coating process was found sensitive to the experimental conditions and in most of the trials; mixtures of the coated and coating precursor particles were obtained. As such, extensive optimizations were carried out and conditions were established for the production of uniformly coated particles.On calcination at 700°C for 1 h, the CdCO₃ particles converted into CdO, whereas the coated particles (CdCO_{3 (core)}/Cu₂(OH)₂CO_{3 (coating)} transformed into CdO_(core)/CuO_(coating)) without sintering. In the coated particles, the core and coating materials stayed mutually inert during the calcination reaction and independently converted into their respective oxides.All the calcined and uncalcined products were characterized by various physical and chemical methods.     

HRTEM observation of the monoclinic-to-tetragonal m-t) phase transition in nanocrystalline ZrO2

The orientation relations m(100) || t(001), m[001] || t[110]; m(011) || t(100), m[100] || t[001]; m(100) || t(110), m[001] || t[001]; m(013) || t(116), m[001] || t[001] (indices for the primitive tetragonal cell) have been found between the tetragonal (t) and monoclinic (m) domains during the electron irradiation-induced m-t phase transition observed in-situ with HREM within isolated zirconia nanoparticles. Geometric models of the m-t interfaces are proposed.