Multilayer power printed structures suitable for controlling EMI noises generated in power converters

Electromagnetic interference (EMI) noises generated in power converters are diffused on the surface of conductors. This means influences occur from radiated EMI noises emitted from power transmission lines as well as conducted EMI noises transmitted from them. EMI noises diffusing on the surface of conductors are generally difficult to control using conventional concentrated constant theory. Thus, a new approach based on distributed constant circuit theory is needed in order to control EMI noises. A power converter structure to control EMI noises using multilayer power printed circuit technology is studied in this paper. A structure which can control EMI noises should simultaneously satisfy two conditions, i.e., one to shut down and one to attenuate EMI noises. The structure satisfying these conditions is studied through simulations using the Transmission-Line Modeling Method. The simulations show that the diffusion of EMI noises is controlled by dividing the flow of currents produced by EMI noises into the horizontal and perpendicular directions. That is, the horizontal current flow is controlled inside using the differences in the resistance produced from differences between inner and outer diameter of power transmission lines and the perpendicular current flow can be controlled by properly designing the thickness of the dielectric layer sandwiched between P-and N-power transmission lines with the symmetrical structure. Moreover, it is confirmed by simulations and experiments that the attenuation of EMI noises is affected by the width of the power transmission lines. It is expected that the results obtained in this paper can provide important rules when designing power converters with EMI noise control functions which use the multilayer power printed circuit technology.     

Problems of Wastewater Treatment and Methods of Solving Them

The studies show that in the combined use of biological and chemisorption stages of treatment, a deeper degree of removal of industrial pollutants from wastewaters is attained. The chemisorption stage allows stabilizing the treatment process in different concentration-temperature drops and increasing the degree of removal of synthetic surfactants (SSF), petroleum products, and nitrogen compounds. The possibility of regulating the selectivity of the treatment process by varying the composition of the chemisorption material is demonstrated.     

Contention-conscious transaction ordering in multiprocessor DSP systems

This paper explores the problem of efficiently ordering interprocessor communication (IPC) operations in statically scheduled multiprocessors for iterative dataflow graphs. In most digital signal processing (DSP) applications, the throughput of the system is significantly affected by communication costs. By explicitly modeling these costs within an effective graph-theoretic analysis framework, we show that ordered transaction schedules can significantly outperform self-timed schedules even when synchronization costs are low. However, we also show that when communication latencies are nonnegligible, finding an optimal transaction order given a static schedule is an NP-complete problem, and that this intractability holds both under iterative and noniterative execution. We develop new heuristics for finding efficient transaction orders, and perform an extensive experimental comparison to gauge the performance of these heuristics.     

Development of a Continuous Segmented Flow Tubular Reactor and the “Scale‐out” Concept – In Search of Perfect Powders

The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.     

Photosensitivity of surface barrier structures based on Cu(In,Ga)Se<Subscript>2</Subscript> films grown by codeposition in vacuum

Polycrystalline Cu(In,Ga)Se₂ (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se₂ type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can be used for optimization of the CIGS film technology.     

Synthesis and Study of Alkaline-Earth Metal Uranoborates,AI I(BUO5)2·nH2O

Previously unknown compounds A^{I I}(BUO₅)₂·nH₂O (A^{I I} = Mg, Ca, Sr, Ba; n = 0-7) were synthesized. Their structure and thermal decomposition were studied by X-ray diffraction, IR spectroscopy, and thermal analysis.     

Electrical and photoelectric properties of electrochemically fabricated SnO2/Cd0.4Zn0.6S/CdTe solar cells

Solar cells based on SnO₂/Cd_0.4Zn_0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I _sc ≈ 21.2 mA/cm², U _oc ≈ 813 mV, and η = 14.7%).     

Equivalent electrical network of the DNA molecule

The variation of current density with bias or temperature is examined for DNA molecules of different configuration. To this end, the DNA molecule is represented as an equivalent electrical network whose behavior is then simulated with PSPICE. The results are found to be in close agreement with ones obtained within a physical model. It is established that the electrical response of a DNA molecule to an applied electric field depends on the boundary conditions and the potential profile along the molecule. This finding should contribute to the creation of a complete library of DNA-molecule configurations with prescribed electrical properties.