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21.
Thomy V. Dubois L. Vanoverschelde C. Sozanski J.P. Pribetich J. 《IEEE sensors journal》2004,4(6):772-778
This paper describes a novel planar antenna sensor created for the purpose of noninvasive temperature measurements using microwave radiometry. In order to improve radiometric measurements in industrial applications, a new generation of sensors is introduced, composed of a metallic sheet. Simulations based upon the method of moments is used both to design and to determine their electromagnetic performances. This paper also describes a radiometric device using these sensors to measure and control the temperature of food products during deep freezing processes. The results and discussions are presented. 相似文献
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The structure and properties of high density polyethylene (HDPE) functionalized by ultraviolet irradiation at different light intensities in air were studied by electron analysis, FTIR spectroscopy, contact angle with water, differential scanning calorimetry and mechanical properties measurement. The results show that oxygen‐containing groups such as C?O, C—O and C(?O)O were introduced onto the molecular chain of HDPE following irradiation, and the rate and efficiency of HDPE functionalization increased with enhancement of irradiation intensity. After irradiation, the melting temperature, contact angle with water and notched impact strength of HDPE decreased, the degree of crystallinity increased, and their variation amplitude increased with irradiation intensity. Compared with HDPE, the yield strength of HDPE irradiated at lower light intensity (32 W m?2 and 45 W m?2) increases monotonically with irradiation time, and the yield strength of HDPE irradiated at higher light intensity (78 W m?2) increases up to 48 h and then decreased with further increase in irradiation time. The irradiated HDPE behaved as a compatibilizer in HDPE/polycarbonate (PC) blends, and the interface bonding between HDPE and PC was ameliorated. After adding 20 wt% HDPE irradiated at 78 W m?2 irradiation intensity for 24 h to HDPE/PC blends, the tensile yield strength and notched Izod impact strength of the blend were increased from 26.3 MPa and 51 J m?1 to 30.2 MPa and 158 J m?1, respectively. Copyright © 2003 Society of Chemical Industry 相似文献
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Kontogiannopoulos N. Psychalinos C. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2006,53(12):1373-1377
In this brief, the well-known switched-current (SI) filtering technique is revisited using the concept of the square-root domain (SRD) filtering. It is proved that SI filters are a subclass of the SRD filters, where sampled-data signal processing is performed. This is achieved by considering typical lossless and lossy SRD sampled-data integrator configurations, using a set of complementary SRD operators which are based on the quadratic I-V relationship of MOS transistor operated in the saturation. Circuit examples are given, where linear-domain integrator and third-order filter configurations were derived using appropriate SRD sampled-data building blocks 相似文献
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Yu. V. Baldokhin V. V. Vavilova P. Ya. Kolotyrkin Yu. K. Kovneristyi N. A. Palii A. S. Solomatin 《Inorganic Materials》2003,39(6):562-567
Mössbauer effect measurements and physicochemical analysis demonstrate that annealing of amorphous Fe–P–Mn alloys leads to the formation of a nanocrystalline structure. 相似文献
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H. L. Du S. R. Rose Z. D. Xiang P. K. Datta X. Y. Li 《Materialwissenschaft und Werkstofftechnik》2003,34(4):421-426
The oxidation/sulphidation behaviour of a Ti‐46.7Al‐1.9W‐0.5Si alloy with a TiAl3 diffusion coating was studied in an environment of H2/H2S/H2O at 850oC. The kinetic results demonstrate that the TiAl3 coating significantly increased the high temperature corrosion resistance of Ti‐46.7Al‐1.9W‐0.5Si. The SEM, EDX, XRD and TEM analysis reveals that the formation of an Al2O3 scale on the surface of the TiAl3‐coated sample was responsible for the enhancement of the corroison resistance. The Ti‐46.7Al‐1.9W‐0.5Si alloy was also modified by Nb ion implantation. The Nb ion implanted and as received sampels were subjected to cyclic oxidation in an open air at 800oC. The Nb ion implantation not only increased the oxidation resistance but also substantially improved the adhesion of scale to the substrate. 相似文献
30.
N. P. Mandal S. C. Agarwal 《Journal of Materials Science: Materials in Electronics》2003,14(10-12):797-798
Exposure to ammonia (NH3) increases the dark current (DC) in nanocrystalline silicon. Light soaking (LS) for short periods also enhances the dark current, which remains at a high value for a long time. Pumping alone is unable to restore the initial annealed state, but annealing brings it back. The final state obtained by LS and NH3 exposure depends on the order in which they are performed. Evaporated selenium (Se) deposited on nanocrystalline silicon decreases the DC. These effects cannot be explained entirely by the presence of a-Si : H alone, in our sample. DC and photoluminescence (PL) measurements indicate the presence of two types of center in our sample, which behave differently when exposed to NH3. 相似文献