Operation analysis of quasi‐resonant,high‐frequency transformer link dc–ac converters applied to phase‐shift PWM control on the secondary side

In recent years, the soft‐switching techniques have attracted attention for their peculiar advantages such as low switching loss, high power density, EMI/RFI noise reduction, and so on. The authors have previously reported on a quasi‐resonant dc–dc converter using new phase‐shift PWM control scheme. By using the proposed control scheme, circulating current is eliminated and ZVS (Zero Voltage Switching) is achieved with small commutating current. As a result, the conduction losses caused by their currents are substantially reduced. In this paper, the authors apply a proposed control scheme to a quasi‐resonant high‐frequency transformer link dc–ac converter. As a result, all switching devises in this dc–ac converter can achieve soft switching with small commutating current irrespective of inverter mode and rectifier mode. Its operating principle and unique features are described as compared with the symmetrical control scheme of dc–ac converter. Operating performance of this dc–ac converter in the steady state is illustrated by means of simulation results. © 1999 Scripta Technica, Electr Eng Jpn, 130(2): 88–98, 2000     

Characterization of Ti/Si binary oxides prepared by the sol-gel method and their photocatalytic properties: The hydrogenation and hydrogenolysis of CH3CCH with H2O

Titanium-silicon (Ti/Si) binary oxides having different Ti content were prepared by the sol-gel method and utilized as photocatalysts for the hydrogenation and hydrogenolysis of CH₂CCH with H₂O. The photocatalytic reactivity and selectivity of these catalysts were investigated as a function of the Ti content and it was found that the hydrogenolysis reaction (C₂H₆ formation) was predominant in regions of low Ti content, while the hydrogenation reaction (C₃H₆ formation) proceeded in regions of high Ti content. The in situ photoluminescence, diffuse reflectance absorption, FT-IR, XAFS (XANES and EXAFS), and XPS spectroscopic investigations of these Ti/Si binary oxides indicated that the titanium oxide species are highly dispersed in the SiO₂ matrices and exist in a tetrahedral coordination exhibiting a characteristic photoluminescence spectrum. The charge transfer excited state of the tetrahedrally coordinated titanium oxide species plays a significant role in the efficient photoreaction with a high selectivity for the hydrogenolysis of CH₃CCH to produces mainly C₂H₆ and CH₄, while the catalysts involving the aggregated octahedrally coordinated titanium oxide species show a high selectivity for the hydrogenation of CH₃CCH to produce C₃H₆, being similar to reactions of the powdered TiO₂ catalysts. The good parallel relationship between the yield of the photoluminescence and the specific photocatalytic reactivity of the Ti/Si binary oxides as a function of the Ti content clearly indicates that the high photocatalytic reactivity of the Ti/Si binary oxides having low Ti content is associated with the high reactivity of the charge transfer excited state of the isolated titanium oxide species in tetrahedral coordination, [Ti³⁺-O⁻]*.     

Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser

A systematic study of changing the reflectivity of a Si/SiO/sub 2/ mirror for 1.3- mu m GaInAsP/InP surface-emitting lasers is discussed. An effective threshold current of 4.5 mA at 77 K continuous operation has been obtained. This indicates a possibility of a submilliampere threshold at 77 K and approximately=20 mA at 300 K by optimizing the mirror reflectivity.<>     

Wavelength tuning of the stimulated emission from GaAs and CdSe electron-beam-pumped lasers

The wavelength at which the stimulated output from a number of electron-beam-pumped semiconductor lasers peaks is a function of the time after the start of the pumping pulse. In general, the output intensity reaches a maximum at short wavelengths considerably before it peaks at the longest. Detailed observations of the wavelength shifts of the peak output as a function of both time and pumping current are reported here for both CdSe and GaAs laser crystals. It is found that the rate of shifting of the wavelength peak (tuning rate) as a function of electron-beam pumping current is very similar in both functional form and magnitude in the two materials. Furthermore, the behavior of the tuning rate is dependent on whether or not lasing action occurs in the crystal under examination. For a crystal in which lasing action is obtained, the tuning rate saturates for pumping current densities above threshold. In contrast, for a nonlasing crystal, the tuning rate is a linearly increasing function of the pumping current density. The implications of these results are discussed with reference to previously reported work concerning shifts with respect to the band edge of the stimulated emission from semiconductor lasers.     

A novel FET model including an illumination intensity parameter forsimulation of optically controlled millimeter-wave oscillators

This paper demonstrates an illuminated FET model including an illumination-intensity parameter for simulation of optical characteristics of microwave and millimeter wave integrated circuits (MMIC's). Modeling for an illuminated GaAs MESFET and an InP high electron-mobility transistor (HEMT), and analysis and experimental results from optically controlled microwave and millimeter-wave hybrid integrated circuit (HIC) and MMIC oscillators are discussed. The proposed illuminated FET model was able to explain the photoresponse of both the GaAs MESFET and the InP HEMT, and the photooperation of their circuits     

Twenty-five years of severe plastic deformation: recent developments in evaluating the degree of homogeneity through the thickness of disks processed by high-pressure torsion

The processing of disks by high-pressure torsion leads to an inhomogeneous distribution in strain with a high strain around the perimeter of the disk and a zero strain in the center. Despite this apparent inhomogeneity, there are now many experiments showing that the hardness values on the surfaces of disks gradually evolve with increasing strain to give a reasonably high level of homogeneity. Experiments were conducted to determine whether this high level of homogeneity extends also through the thickness of the disks or whether inhomogeneities occur in the axial direction. Results are presented for high-purity aluminum and a magnesium AZ31 alloy as two representative materials showing different hardness characteristics.     

Operational stability enhancement of white OLEDs with single solution‐processed emitting layer fabricated by “self‐layered technique”

Abstract — We achieved operationally stable white OLEDs with a single solution processed EML fabricated using a self‐layered technique. An LT70 of 10 khr at an initial luminance of 1000 cd/m² was obtained by suppressing the exciplex formation between the EML and ETL, preventing Li diffusion into the EMLs, and using red dopants with shallow LUMO levels and stable host materials.     

Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

We obtained room-temperature red emission from GaN-based light-emitting diodes (LEDs) using a Eu-doped GaN (GaN:Eu) as an active layer. The bright emission was observed under normal lighting condition, which is associated with the intra-4f shell transition of Eu³⁺ ions. The LED properties depends on the growth condition of GaN:Eu layer. Since the high-quality GaN can be grown at higher growth pressure, the intense electroluminescence (EL) was observed in the LED with a GaN:Eu active layer grown at atmospheric pressure, which is due to the enhancement of the energy transfer efficiency from the GaN host material to the Eu ions. At a d.c. current of 20 mA, the light output power and external quantum efficiency were 17 μW and 0.04%, respectively. These results indicate the feasibility of GaN:Eu to realize a GaN-based red emitter for fabrication of nitride-based monolithic optical devices.     

Enhancement of unconfined compressive strength of sand test pieces cemented with calcium phosphate compound by addition of various powders

To improve the unconfined compressive strength (UCS) of a novel chemical grout composed of a calcium phosphate compound (CPC-Chem), we performed UCS tests and scanning electron microscopy (SEM) observations on sand test pieces cemented with CPC-Chem and four kinds of powders (tricalcium phosphate, TCP; magnesium phosphate, MgP; calcium carbonate, CC and magnesium carbonate, MgC) as seed crystals. The UCS of the CPC-Chem test pieces cemented with TCP and CC was significantly greater than that of the test pieces with no added powders. The UCS of the test pieces with TCP and CC additives exceeded the targeted value of 100 kPa and increased to a maximum of 261.4 kPa and 209.7 kPa for the test pieces with TCP and CC additives, respectively. Furthermore, the UCS of test pieces with 1 wt% or 5 wt% TCP and 1 wt% CC additives was maintained at a level exceeding 200 kPa for 168 days. SEM observations revealed net-like and three-dimensional structures in segments of test pieces cemented with 1 wt% or 5 wt% TCP and 1 wt% CC in CPC-Chem, which could have been the reason of the long-term stability of UCS (over 200 kPa for 168 days) observed in this study. These results suggest that the addition of TCP and CC significantly enhances the ground improvement afforded by CPC-Chem.     

Removal of fluoride ions from water by adsorption onto carbonaceous materials produced from coffee grounds

Carbonaceous material for the removal of fluoride ions from water was prepared from coffee grounds (CGs) by calcination and subsequent HCl treatment. The characteristics of the CGs, including the surface area, mean pore diameter, pore volume, and surface functional groups were determined, and the morphological characteristics were evaluated using scanning electron microscopy. The adsorption isotherms, saturated amount of fluoride ions adsorbed, and the effect of contact time and temperature on the adsorption of fluoride ions were investigated for a sample of tap water. The specific surface area of CG calcined at 600° (CG600) was larger than that of CGs calcined at 400, 800, and 1000°. Phenolic, lactonic, and carboxyl groups were detected on the CG600 surface. The adsorption capacity of the carbonized CGs for fluoride was ranked in the order CG400 < CG1000 < CG800 < CG600 (where the numeral indicates the carbonization temperature), whereas virgin CG and CG600-NAT (not treated with hydrochloric acid solution) did not exhibit any adsorption ability for fluoride ions. The amount of fluoride ions adsorbed onto CG600 increased with increasing temperature and was consistent with chemical adsorption. The mechanism of adsorption of fluoride ions onto CG600 proceeded via ion exchange with chloride ions (1:1) present on the surface of CG600. The adsorption isotherms were fitted to the Freundlich and Langmuir equations. Moreover, CG600 showed an acceptable adsorption capacity for fluoride ions present in tap water.