3.21 ps ECL gate using InP/InGaAs DHBT technology

A new circuit configuration for an emitter-coupled logic (ECL) gate that can reduce propagation delay time has been demonstrated. Nineteen-stage ring oscillators were fabricated using InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ of about 232 and 360 GHz, respectively, to evaluate the speed performance of the proposed ECL gate. The minimum propagation delay is 3.21 ps/gate. The proposed ECL gate is about 8% faster than the conventional ECL gate.     

Extraction of a plasma time-activity curve from dynamic brain PET images based on independent component analysis

A compartment model has been used for kinetic analysis of dynamic positron emission tomography (PET) data [e.g., 2-deoxy-2-18F-fluoro-D-glucose (FDG)]. The input function of the model [the plasma time-activity curve (pTAC)] was obtained by serial arterial blood sampling. It is of clinical interest to develop a method for PET studies that estimates the pTAC without needing serial arterial blood sampling. For this purpose, we propose a new method to extract the pTAC from the dynamic brain PET images using a modified independent component analysis [extraction of the pTAC using independent component analysis (EPICA). Source codes of EPICA are freely available at http://www5f.biglobe.ne.jp/?kimura/Software/top.html]. EPICA performs the appropriate preprocessing and independent component analysis (ICA) using an objective function that takes the various properties of the pTAC into account. After validation of EPICA by computer simulation, EPICA was applied to human brain FDG-PET studies. The results imply that the EPICA-estimated pTAC was similar to the actual measured pTAC, and that the estimated blood volume image was highly correlated with the blood volume image measured using 15O-CO inhalation. These results demonstrated that EPICA is useful for extracting the pTAC from dynamic PET images without the necessity of serial arterial blood sampling.     

A +10-dBm IIP/sub 3/ SiGe mixer with IM/sub 3/ cancellation technique

A third-order intermodulation (IM/sub 3/) cancellation technique using a submixer is proposed for a low-power low-distortion mixer. The IM/sub 3/ cancellation is achieved by summing IM/sub 3/ generated in a main mixer and the submixer, which are almost the same amplitude and opposite phase. The mixer was designed to operate at 870 MHz. The proposed technique reduces IM/sub 3/ by 18 dB with a current increase of about 15% and is suitable for low-power applications. The mixer achieved an input-referred third-order intercept point (IIP/sub 3/) of 10 dBm, a gain of 8.7 dB, and an NF of 9.8 dB and dissipates 30 mW from 2.9 V. The IC is fabricated in a SiGe bipolar transistor with f/sub T/= 30 GHz. The IC occupies 1.44 mm/spl times/1.44 mm.     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate

We investigated the possibility of forming a step-free quantum well structure. A step-free InAs monolayer was grown on a selectively grown mesa by controlling surface phases with in-situ monitoring of surface photo-absorption. We selectively grew a GaAs buffer at 800°C and cooled the sample keeping the (2×2)-like As stabilized surface. Atomic force microscopy (AFM) observation demonstrated that fully step-free surfaces were formed on the 8 μm wide mesa. Then, a monolayer-thick InAs was formed on this step-free surface and this InAs layer was capped by GaAs under the (2×2)-like condition. The quantum level of the step-free InAs layer was evaluated by spatially resolved photoluminescence (μPL) measurement. Uniform PL intensity and the lack of a double layer peak indicated the formation of a step-free InAs quantum well, which was in good agreement with AFM observation.     

Design and characteristics of InGaAs/InP composite-channel HFET's

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6 and 0.7 /spl mu/m gates, respectively. The average velocity of electrons in the composite channel is 2.9/spl times/10/sup 7/ cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel.<>     

氟伐他汀对2型糖尿病合并高胆固醇血症患者的抗氧化作用

目的调查氟伐他汀对2型糖尿病合并高胆固醇血症患者体内氧化压力的影响以及与降脂作用的相关性。方法糖尿病合并高脂血症患者41例,男21例,女20例,平均年龄（56．7&#177;6．0）岁,均在日本弘前大学附属医院收集。每晚服用20mg氟伐他汀,于用药前及用药后4、8、12周分别测定血浆中低密度脂蛋白（LDL）,LDL size、LHPO、TBARS的动态变化。结果血浆LHPO,TBARS、LDL—C在用药的第8周（分别为19．4&#177;8．1 vs43.3&#177;13．1nmol／mg LDLpm;5．33&#177;0．97vs8．83&#177;1．11nmol／mL;125&#177;9vs157&#177;12mg／dL,P〈0．05）和12周（分别为14．4&#177;5．1vs43．3&#177;13．1nmol／mg LDLpro;2．3&#177;0．3vs8．83&#177;1．11nmol／mL;131&#177;5vs157&#177;12mg／dL,P〈0．05）明显降低,LDL size无统计学差异。结论氟伐他汀能够显著降低患者血中的LHPO、TBARS、LDL,表明对2型糖尿病合并高脂血症患者有抗氧化作用．且与其抗血脂的作用相关．     

Over 1100 nm wavelength tuning in superstructure grating (SSG) DBR lasers

A broad range tuning of over 100 nm in tunable DBR lasers with superstructure grating (SSG) is reported. The SSG reflectors for 100 nm were designed and patterned by electron beam lithography. 1.55 mu m DBR lasers with SSG reflector operate in a single mode with a tuning range of 83 nm under CW conditions. With inclusion of the multimode operating region, the tuning range becomes as wide as 103 nm.<>     

Semiconductor pump laser technology

Recent progress in high-power semiconductor lasers for erbium-doped fiber amplifiers is described, focusing on 1.48-μm InGaAsP/InP lasers and 0.98-μm InGaAs/GaAs lasers. The experimental output powers exceed 200 mW (the maximum power was 325 mW) for 1.48-μm lasers, and simulation results indicate that over 400 mW could be obtained by optimizing parameters in strained-layer (SL) multiple-quantum-well (MQW) lasers. Stable operation over a few thousand hours under 100-mW power is demonstrated for liquid-phase-epitaxy-grown lasers, MQW lasers, and SL-MQW lasers grown by all-metal organic vapor-phase epitaxy (MOVPE). For 0.98-μm lasers, improvement in the fiber coupling efficiencies and long-term reliabilities are described. Their power coupled into a single-mode fiber has reached over 100 mW, with coupling efficiencies of approximately 40%. Although reliability seems to be one of the drawbacks compared with 1.48-μm lasers, stable operation for over 10,000 h at 50°C and 30 mW has been reported     

Production of eicosapentaenoic acid by a bacterium isolated from mackerel intestines

Optimization of culture conditions for the growth rate, 5,8,11,14,17-cis-Eicosapentaenoic acid (EPA) content and EPA productivity of a bacterium isolated from Pacific mackerel intestines was investigated by use of a culture medium containing 1.00 wt% peptone and 0.50 wt% yeast extract in an artificial sea water (ASW). Cultivation temperature affected the growth rate and cellular EPA content of the bacterium. The cellular EPA content at 8°C was as great as 16.8 mg/g of dry cells, which was more than two times greater than that at 25°C (7.3 mg/g of dry cells), although the growth rate showed a maximum at 25°C. Both the yield of bacterial cells and the cellular EPA content at 25°C reached maximum values when the pH of the culture medium was nearly 7.0 and when the concentration of ASW was 100% (v/v). Under optimum culture conditions [25°C pH 7.0 and 100% (v/v) ASW], the amount of EPA accumulated in the cellular lipids reached 45.6 mg/L of culture broth after 8 hr.