Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate

We investigated the possibility of forming a step-free quantum well structure. A step-free InAs monolayer was grown on a selectively grown mesa by controlling surface phases with in-situ monitoring of surface photo-absorption. We selectively grew a GaAs buffer at 800°C and cooled the sample keeping the (2×2)-like As stabilized surface. Atomic force microscopy (AFM) observation demonstrated that fully step-free surfaces were formed on the 8 μm wide mesa. Then, a monolayer-thick InAs was formed on this step-free surface and this InAs layer was capped by GaAs under the (2×2)-like condition. The quantum level of the step-free InAs layer was evaluated by spatially resolved photoluminescence (μPL) measurement. Uniform PL intensity and the lack of a double layer peak indicated the formation of a step-free InAs quantum well, which was in good agreement with AFM observation.     

Information exchange and governance structures in US and JapaneseR&D consortia: institutional and organizational influences

We examine institutional and organizational influences upon information exchange and governance structures within R&D consortia in the United States and Japan. We hypothesized that national differences in institutional environments would lead to less active governance and information-exchange activities within Japanese R&D consortia relative to their US counterparts. At the consortium level, we expected that internal consortium diversity would increase information exchange and governance requirements, and that structures stabilizing relations between consortium members would reduce information exchange and governance requirements. We tested these hypotheses on 39 US and 54 Japanese multifirm R&D consortia, involving, respectively, 1801 US member organizations and 1647 Japanese member organizations. Controlling for organizational age, size, and strategic focus, we found that internal diversity and interorganizational relations are both associated with information-exchange and governance mechanisms. Our model has much greater explanatory power for the United States than for Japan     

Hybrid electric vehicles take to the streets

In this paper, the authors describe how, equipped with a gasoline engine and an electric motor, hybrid electric vehicles can now bridge the gap between vehicle range and environmental concerns     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

A transceiver PIC for bidirectional optical communication fabricated by bandgap energy controlled selective MOVPE

A transceiver PIC consisting of a DFB-LD, a receiver PD and a Y-shaped branch waveguides is realized by in-plane bandgap energy controlled selective MOVPE. Both active and passive core layers are formed in one step selective growth, and complicated fabrication procedure is no longer required. More than 1 mW fiber coupled power and 7 GHz receiver bandwidth are obtained. The modulation and detection operations at 500 Mb/s are successfully demonstrated.     

1.5 nm direct-tunneling gate oxide Si MOSFET's

In this paper, normal operation of a MOSFET with an ultra-thin direct-tunneling gate oxide is reported for the first time. These high current drive n-MOSFET's were fabricated with a 1.5 nm direct-tunneling gate oxide. They operate well at gate lengths of around 0.1 μm, because the gate leakage current falls in proportional to the gate length, while the drain current increases in inverse proportion. A current drive of more than 1.0 mA/μm and a transconductance of more than 1,000 mS/mm were obtained at a gate length of 0.09 μm at room temperature. These are the highest values ever obtained with Si MOSFET's at room temperature. Further, hot-carrier reliability is shown to improve as the thickness of the gate oxide is reduced, even in the 1.5 nm case. This work clarifies that excellent performance-a transconductance of over 1,000 mS/mm at room temperature-can be obtained with Si MOSFET's if a high-capacitance gate insulator is used     

A rod matrix compensator for small-field intensity modulated radiation therapy: a preliminary phantom study

A compensator made of a tungsten-based rod matrix has been proposed for small-field intensity modulated radiation therapy. The compensator was attached to a 6 MV linac gantry head. The proposed compensator could modulate the X-ray intensity with a step of 10% and a minimum transmission of 2.5%.     

Rocket-triggered lightning experiments on zinc oxide arresters and their applications to power transmission lines

In measurements of rocket-triggered lightning current and voltage performed between 1986 and 1995 on the mountain top of Okushishiku in the Kanazawa area, the authors succeeded in artificially inducing winter lightning to arresters. Using the data obtained from those measurements, we analyzed the energy absorption characteristics of surge arresters, such as are installed on every transmission line tower for three phrases, by EMTP. The energy withstand capability of an individual arrester was verified to be approximately the same as the expected value. The analysis results for the energy share of each arrester connected in parallel showed that the usual light duty arresters installed on every tower have the possibility to be able to absorb extreme winter lightning energy even if the lightning hits the power line directly. © 1998 Scripta Technica. Electr Eng Jpn, 122(4): 25–33, 1998     

Efficient use of frequencies in terrestrial ISDB system

Requirements for a terrestrial ISDB system and the schemes for efficiently using frequencies to fulfil the requirements are discussed. One requirement of a terrestrial ISDB system is the efficient allocation of frequencies using a SFN (single frequency network). The SFN incorporates the great advantages of OFDM, which has excellent performance under multi-path conditions. The transmission characteristics of 64QAM-OFDM and the SFN capability using 64QAM-OFDM in the Kanto area, including the Tokyo metropolitan area, are analyzed. The results show that more than a 97% coverage ratio can be obtained even by using a single channel while the same area is covered currently by more than 30 analog channels. The other requirement is a scheme for efficiently using the available frequency band for various services. A transmission scheme concept called BST-OFDM (band segmented transmission-orthogonal frequency division multiplexing) is proposed as a transmission scheme for meeting the requirements of a terrestrial ISDB system. In the BST-OFDM scheme, data are transmitted in a number of OFDM blocks called a BST-segment, for which channel coding and modulation schemes can be independently defined to provide robustness in the transmission environment according to stationary, portable and mobile reception