New type of tin support for hydroprocessing catalyst

TiN supported molybdenum sulfide catalysts showed much higher activity for cleavage of C-C bonds than oxide supported molybdenum sulfide catalysts, indicating the possibility of a new generation of supports for hydroprocessing catalysts.     

Nonequiiibrium Surface Segregation in Aluminum-Doped TiO2 under an Oxidizing Potential: Effects on Redox Color-Boundary Migration

During the oxidation of redued single crystals of Al-doped rutile, unusual anisotropies in color-boundary migration have been observed that are opposite to those predicted from published diffusion data. Analysis of the redox kinetics and of surface segregation (using ESCA and AES) shows that rapid transport of minority Al interstitials in the c -axis direction occurs under an oxidation potential, resulting in a surface segregation layer inhibiting further reoxidation. This surface segregation is nonequilibrium in nature, is driven by oxidation, and bears similarities to the phenomena of kinetic demixing in ionic systems. The results show that minority defects can play critical roles in demixing at the local scale; in their absence this system would not be expected to demix. This thus appears to be an additional mechanism for nonequilibrium interfacial segregation in ionic systems.     

Characteristics of laser diodes with a partially intermixedGaAs-AlGaAs quantum well

Laser diodes (LD's) with a partially intermixed quantum-well (QW) active layer are fabricated by Zn out-diffusion from a p-cladding layer to the QW region. The dependencies of the degree of intermixing, measured by the photoluminescence (PL) shift, on Zn concentration of the p-cladding layer (P_clad) and the Al content of the guiding layer (X_g) in a separate-confinement-heterostructure (SCH) are investigated. P_clad changes in the range from 1×10 ¹⁸ cm^-3 to 4×10¹⁸ cm^-3 and X_g changes in the range from 0.21-0.37. When P_clad is 2×10¹⁸ cm^-3 and X_g is 0.37, large bandgap energy shift of 96.1 meV is observed. The lasing wavelengths of the LD's, with the partially intermixed QW, are blue-shifted linearly with increasing P_clad and X_g. For the bandgap energy shift of 66.8 meV by PL, the threshold current density is increased by 33% from that of the nonintermixed LD. Reliability of LD's with the partially intermixed QW is investigated for the first time. In spite of a large degree of intermixing the reliability of the LD with the partially intermixed QW of 66.8 meV energy shift by PL is the same as the nonintermixed one, which is confirmed by the aging test of 2500 hours at 45°C with the output power of 1 W under CW operation     

Diagnostics of TM010-mode microwave cavity discharges inCO2-N2-He laser gas mixtures. II. Measurement ofvibration temperature

For pt. I see ibid., vol., 31, no. 8, p. 1525-32 (1995). The plasma temperatures in microwave discharged CO₂-N₂-He laser gas mixtures were examined using the spectroscopic and electrostatic probe methods. A vibration temperature of N₂ molecules, obtained spectroscopically, was determined to be nearly 7000 K without gas circulation and to be nearly 4000 K at the mass flow rate of 4.2 kg/h. It is found that an efficiency of laser output power exceed 14% (RF to laser output power conversion ratio) below the vibration temperature of 4000 K. The values of vibration temperature obtained were higher than those reported in DC discharges     

High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

C₆₀ and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C₆₀ thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm² V^?1 s^?1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm² V^?1 s^?1. The μ values recorded for C₆₀ and picene thin film FETs are comparable to those for C₆₀ and picene thin film FETs with Au electrodes.     

A surge-free intelligent power device specific to automotive highside switches

A novel type of intelligent power device (IPD), which is suitable for automotive monolithic high side switch with high current capability, is presented. An integration of a vertical-power DMOSFET and planar MOS IC devices is performed by the newly developed junction-isolation technique using only one epitaxial growth. The isolation voltage of 80 V has been obtained, which is large enough for automotive IPDs if they are protected against high voltage transients on the battery line. A rugged vertical DMOSFET (VDMOS) has also been developed for this IPD. It has a cellular Zener diode between its source and drain, which prevents the secondary breakdown of parasitic bipolar transistor, and the resulting avalanche capability enhancement is more than an order of magnitude. This VDMOS is used for both output power device and protection device for low-voltage MOS circuitry, which makes the IPD free from any transients in the automobile without the need for external protection     

A numerically stable fast Newton-type adaptive filter based on order recursive least squares algorithm

This paper presents a numerically stable fast Newton-type adaptive filter algorithm. Two problems are dealt with in the paper. First, we derive the proposed algorithm from an order-recursive least squares algorithm. The result of the proposed algorithm is equivalent to that of the fast Newton transversal filter (FNTF) algorithm. However, the derivation process is different. Instead of extending a covariance matrix of the input based on the min-max and the max-min criteria, the derivation shown in this paper is to solve an optimum extension problem of the gain vector based on the information of the Mth-order forward or backward predictor. The derivation provides an intuitive explanation of the FNTF algorithm, which may be easier to understand. Second, we present stability analysis of the proposed algorithm using a linear time-variant state-space method. We show that the proposed algorithm has a well-analyzable stability structure, which is indicated by a transition matrix. The eigenvalues of the ensemble average of the transition matrix are proved all to be asymptotically less than unity. This results in a much-improved numerical performance of the proposed algorithm compared with the combination of the stabilized fast recursive least squares (SFRLS) and the FNTF algorithms. Computer simulations implemented by using a finite-precision arithmetic have confirmed the validity of our analysis.     

Some Remarks on Optimum Inspection Policies

We discuss optimum inspection policies by introducing the inspection density. We derive the optimum inspection policy by using this inspection density. The models discussed are: 1) the basic model, 2) the basic model with checking time, and 3) the basic model with imperfect inspection. For each model, we obtain the approximate optimum inspection policy minimizing the total s-expected cost by applying the calculus of variations.     

Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs

Introduction of tensile strain into Ge substrates was demonstrated by forming embedded SiGe stressors on the recessed regions formed by an anisotropic wet chemical etching process for strained Ge-nMOSFETs having high electron mobility. A damage-free and well controlled anisotropic wet chemical etching process is developed in order to avoid plasma-induced damages in a conventional RIE process. The uni-axial tensile strain over 1% near the Ge recess-edge regions, which is induced by the embedded SiGe stressors, is also demonstrated for the first time. These results suggest that higher electron mobility than the upper-limit for a Si-MOSFET is obtainable in short channel strained Ge-nMOSFETs with the embedded SiGe stressors.