Change in Oxygen Content of Y2O3-Nd2O3-Doped Silicon Nitride During Firing

The oxygen content of silicon nitride with 1 mol% Y₂O₃—Nd₂O₃ additive was measured after firing to determine the compositional change during gas-pressure sintering. Oxygen content decreases from 2.5 to 0.94 wt% during firing for 4 h at 1900°C and 10-MPa pressure in N₂. This decrease in oxygen results from the release of SiO gas generated by a thermaldecomposition reaction between Si₃N₄ and SiO₂. The resultant sintered silicon nitride material contains less than 1 wt% oxygen.     

Unsteady behavior of leading-edge vortex and diffuser stall in a centrifugal compressor with vaned diffuser

The characteristics of a rotating stall of an impeller and diffuser and the evolution of a vortex generated at the diffuser leading-edge (i.e., the leading-edge vortex (LEV)) in a centrifugal compressor were investigated by experiments and numerical analysis. The results of the experiments revealed that both the impeller and diffuser rotating stalls occurred at 55 and 25 Hz during off-design flow operation. For both, stall cells existed only on the shroud side of the flow passages, which is very close to the source location of the LEV. According to the CFD results, the LEV is made up of multiple vortices. The LEV is a combination of a separated vortex near the leading- edge and a longitudinal vortex generated by the extended tip-leakage flow from the impeller. Therefore, the LEV is generated by the accumulation of vorticity caused by the velocity gradient of the impeller discharge flow. In partial-flow operation, the spanwise extent and the position of the LEV origin are temporarily transmuted. The LEV develops with a drop in the velocity in the diffuser passage and forms a significant blockage within the diffuser passage. Therefore, the LEV may be regarded as being one of the causes of a diffuser stall in a centrifugal compressor.     

Numerical simulation of tip leakage vortex effect on hydrogen-combustion flow around 3D turbine blade

In these years, a lot of environmental problems such as air pollution and exhaustion of fossil fuels have been discussed intensively. In our laboratory, a hydrogen-fueled propulsion system has been researched as an alternative to conventional systems. A hydrogen-fueled propulsion system is expected to have higher power, lighter weight and lower emissions. However, for the practical use, there exist many problems that must be overcome. Considering these backgrounds, jet engines with hydrogen-fueled combustion within a turbine blade passage have been studied. Although some studies have been made on injecting and burning hydrogen fuel from a stator surface, little is known about the interaction between a tip leakage vortex near the suction side of a rotor tip and hydrogen-fueled combustion. The purpose of this study is to clarify the influence of the tip leakage vortex on the characteristics of the 3-dimensional flow field with hydrogen-fueled combustion within a turbine blade passage. Reynolds-averaged compressible Navier-Stokes equations are solved with incorporating a k-ε turbulence and a reduced chemical mechanism models. Using the computational results, the 3-dimensional turbulent flow field with chemical reactions is numerically visualized, and the three-dimensional turbulent flow fields with hydrogen combustion and the structure of the tip leakage vortex are investigated.     

Acceleration of the redox kinetics of VO2+/VO2 + and V3+/V2+ couples on carbon paper

The redox kinetics of VO²⁺/VO₂ ⁺ and V³⁺/V²⁺ couples on a carbon paper (CP, HCP030 N, Shanghai Hesen, Ltd., China) electrode were investigated in terms of their standard rate constant (k ₀) and reaction mechanism. The values determined for k ₀ for VO²⁺ ?? VO₂ ⁺ and V³⁺ ?? V²⁺ using the CP electrode are 1.0 × 10^?3 and 1.1 × 10^?3 cm s^?1, respectively. The value of k ₀ increases by one or two order(s) of magnitude compared with values obtained using electrodes composed of pyrolytic graphite and glassy carbon. The acceleration of the redox kinetics of vanadium ions is a result of the large surface area of the CP electrode. An inner-sphere mechanism for the reaction on the surface of the electrode is proposed. The kinetic features of vanadium redox reactions on the CP electrode reveal that CP is suitable for use as the electrodes in vanadium redox-flow batteries.     

Optical assessment of silicon nanowire arrays fabricated by metal-assisted chemical etching

Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theoretical absorptance of a 10-μm-thick flat Si wafer, suggesting that SiNW arrays exhibit strong optical confinement. To reveal the reason for this strong optical confinement demonstrated by SiNW arrays, angular distribution functions of their transmittance were experimentally determined. The results suggest that Mie-related scattering plays a significant role in the strong optical confinement of SiNW arrays.     

Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition

To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al₂O₃) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al₂O₃-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al₂O₃ and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al₂O₃ deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.     

Synthesis and Photoluminescence of Eu2+-Doped α-Silicon Nitride Nanowires Coated with Thin BN Film

A feasible doping strategy is introduced to synthesize Eu²⁺-doped α-Si₃N₄ nanowires coated with a thin BN film. The nanowires were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and a fluorescence spectrophotometer. The Eu²⁺-doped α-Si₃N₄ nanowires emitted strong yellow light, which is related to the 4 f ⁶5 d –4 f ⁷ transition of Eu²⁺, upon a broad excitation wavelength range between 250 and 450 nm. The obtained nanowires provided a potential candidate for application in optical nanodevices, as well as in white LEDs.     

Liquid‐phase sintering of highly Na+ ion conducting Na3Zr2Si2PO12 ceramics using Na3BO3 additive

Na₃Zr₂Si₂PO₁₂ (NASICON) is a promising material as a solid electrolyte for all‐solid‐state sodium batteries. Nevertheless, one challenge for the application of NASICON in batteries is their high sintering temperature above 1200°C, which can lead to volatilization of light elements and undesirable side reactions with electrode materials at such high temperatures. In this study, liquid‐phase sintering of NASICON with a Na₃BO₃ (NBO) additive was performed for the first time to lower the NASICON sintering temperature. A dense NASICON‐based ceramic was successfully obtained by sintering at 900°C with 4.8 wt% NBO. This liquid‐phase sintered NASICON ceramic exhibited high total conductivity of ~1 × 10^?3 S cm^?1 at room temperature and low conduction activation energy of 28 kJ mol^?1. Since the room‐temperature conductivity is identical to that of conventional high‐temperature‐sintered NASICON, NBO was demonstrated as a good liquid‐phase sintering additive for NASICON solid electrolyte. In the NASICON with 4.8 wt% NBO ceramic, most of the NASICON grains directly bonded with each other and some submicron sodium borates segregated in particulate form without full penetration to NASICON grain boundaries. This characteristic composite microstructure contributed to the high conductivity of the liquid‐phase sintered NASICON.     

Computational fluid dynamics simulation and statistical procedure for estimating wide-area distributions of airborne sea salt considering local ground conditions

Steel corrosion under atmospheric conditions is a critical issue in the maintenance of structures such as electric transmission towers and bridges during their long-term operation, which are generally located at many places over a wide area. Since a major factor causing corrosion is airborne salt particles coming from the sea, wide-area distributions of the long-term cumulative amount of sea salt deposited on surfaces are needed. Moreover, since the amount of airborne sea salt varies locally with the topography, it is also important to consider the effects of topography. In this paper, a method combining a computational fluid dynamics model and a statistical procedure is proposed to efficiently estimate wide-area distributions of the cumulative amount of airborne sea salt by considering the local topography. The predicted amount of airborne sea salt decreases with increasing distance from the coast and varies with the topography and the offshore wind. A comparison between predicted and observed amounts revealed that: (1) this method appropriately estimates topographical effects on sea-salt transport and enables the estimation of deposited sea salt on structure surfaces, and (2) consideration of the trapping efficiency of sea-salt particles on structure surfaces improves the prediction accuracy.     

Mechanical properties of silicon-doped diamond-like carbon films prepared by pulse-plasma chemical vapor deposition

Silicon-doped diamond-like carbon (Si-DLC) films were prepared by dc pulse-plasma chemical vapor deposition (CVD), using a mixture of acetylene (C₂H₂) and tetramethylsilane (TMS) as the material gas. The pulse voltage was varied from − 2 to − 5 kV, and the TMS flow ratio (TMS/(C₂H₂ + TMS)) was varied from 0 to 40%. At a pulse voltage of − 2 kV, an increase in TMS flow ratio leads to a decrease in hardness. In contrast, at a pulse voltage of − 5 kV, an increase in TMS flow ratio leads to a slight increase in hardness. The high hydrogen concentration in the films due to an increase in TMS flow ratio promotes the formation of polymeric sp³ C―H bonds, resulting in the fabrication of soft films at a low pulse voltage of − 2 kV. However, an increase in the effect of ion peening on the growth face results in the formation of hard films at a high pulse voltage of − 5 kV. Then, at a pulse voltage of − 5 kV fabricating hard Si-DLC films, an increase in TMS flow ratio leads to an increase in the silicon content in the films, resulting in a decrease in the friction coefficient. Therefore, it is clarified that Si-DLC films fabricated by dc pulse-plasma CVD under a high pulse voltage and high TMS flow ratio exhibit high hardness and a low friction coefficient. Moreover, to investigate the friction coefficient of Si-DLC films fabricated by dc pulse-plasma CVD, films deposited by dc plasma CVD were also evaluated. To obtain the same low friction coefficient, dc pulse-plasma CVD requires less TMS than dc plasma CVD. Hence, it is also clarified that Si-DLC films can be fabricated at a low cost by dc pulse-plasma CVD.