High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

The paper reports a normally-off n-channel AlGaN/GaN hybrid metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET) on Si substrate with high field-effect mobility. To decrease the channel resistance and to improve the field-effect mobility, of the MOS-HFET, a selective area growth (SAG) technique is applied at the channel region. The fabricated MOS-HFET exhibits a good normally-off operation with the threshold voltage of 3.7 V, the specific ON-state resistance of 7.6 mΩ cm², and the breakdown voltage of over 800 V.     

Physicochemical Property of Huaishan (Rhizoma Dioscorea) and Matai (Eleocharis dulcis) Starches

The physicochemical properties of starch, the main component in tuberous root of Huaishan (Rhizoma Dioscorea) and corm of Matai (Eleocharis dulcis) was investigated and compared with those of a Japanese yam, “Yamanoimo” starch, and potato starch. Mean particle sizes of Huaishan and Matai starches were 24 ± 5 μm and 12 ± 5 μm, respectively. X-Ray diffraction pattern suggests that Huaishan starch was B-type or C-type just close to B-type and Matai starch was A-type or C-type just close to A-type. Apparently, the intermediate component (IntCom) of Huaishan starch, which was obtained by fractionation of the starch into amylose and amylopectin, may still contain amylose and amylopectin. IntCom of Matai starch has an intermediate nature between amylose and amylopectin. It is concluded that the amylopectin molecules of Huaishan starch contain a larger amount of longer branch-ed chains and those of Matai starch contain a larger amount of shorter branched chains. Amylograms of Matai and Huaishan starches suggest that the gelatinized starches are difficult to retrograde. Digestibility of Huaishan starch by an α-amylase was the highest among the tested starches.