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91.
Chien-I Kuo Heng-Tung Hsu Chang E.Y. Chia-Yuan Chang Miyamoto Y. Datta S. Radosavljevic M. Guo-Wei Huang Ching-Ting Lee 《Electron Device Letters, IEEE》2008,29(4):290-293
Eighty-nanometer-gate In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel high-electron mobility transistors (HEMTs), which are fabricated using platinum buried gate as the Schottky contact metal, were evaluated for RF and logic application. After gate sinking at 250degC for 3 min, the device exhibited a high gm value of 1590 mS/mm at Vd = 0.5 V, the current-gain cutoff frequency fT was increased from 390 to 494 GHz, and the gate-delay time was decreased from 0.83 to 0.78 ps at supply voltage of 0.6 V. This is the highest fT achieved for 80-nm-gate-length HEMT devices. These superior performances are attributed to the reduction of distance between gate and channel and the reduction of parasitic gate capacitances during the gate-sinking process. Moreover, such superior performances were achieved through a very simple and straightforward fabrication process with optimal epistructure of the device. 相似文献
92.
Chia-Yuan Chang Heng-Tung Hsu Chang E.Y. Chien-I Kuo Datta S. Radosavljevic M. Miyamoto Y. Guo-Wei Huang 《Electron Device Letters, IEEE》2007,28(10):856-858
An 80-nm InP high electron mobility transistor (HEMT) with InAs channel and InGaAs subchannels has been fabricated. The high current gain cutoff frequency (ft) of 310 GHz and the maximum oscillation frequency (fmax) of 330 GHz were obtained at VDS = 0.7 V due to the high electron mobility in the InAs channel. Performance degradation was observed on the cutoff frequency (ft) and the corresponding gate delay time caused by impact ionization due to a low energy bandgap in the InAs channel. DC and RF characterizations on the device have been performed to determine the proper bias conditions in avoidance of performance degradations due to the impact ionization. With the design of InGaAs/InAs/InGaAs composite channel, the impact ionization was not observed until the drain bias reached 0.7 V, and at this bias, the device demonstrated very low gate delay time of 0.63 ps. The high performance of the InAs/InGaAs HEMTs demonstrated in this letter shows great potential for high-speed and very low-power logic applications. 相似文献
93.
94.
Todorovic N Forkapic S Bikit I Mrdja D Veskovic M Todorovic S 《Radiation protection dosimetry》2011,144(1-4):655-658
TENORM are found in a wide variety of waste materials, some raw mineral ores and in some consumer products (in trace amounts) where molecules of radionuclides may be bound to specific minerals used in the manufacturing process and can result in increases in radiation exposures to workers and the public. The aim of this paper is to understand this problem and to develop effective ways to protect humans and the environment from harmful exposure to the radiation in TENORM materials in the Vojvodina region. The results of measurement of indoor radon concentration in schools and kindergartens and dose-rate and gamma-spectrometry measurements of the workplace with TENORM materials are presented. 相似文献