A Probabilistic and Decision Attitude Aggregation Operator for Intuitionistic Fuzzy Environment

In this paper, a new operator for aggregation of uncertain information under intuitionistic fuzzy environment is proposed. A novel approach is proposed for the selection of best alternative action in the face of the imprecise probabilities and the complex attitudinal character of the decision makers (DMs). This approach is distinguished with its capacity to accommodate the linguistic specification of probabilities as provided by human experts directly without the need to determine the fuzzy membership grades. The focus is to compute the net payoff for each alternative in the face of uncertain states of nature and DM's attitude. The proposed operator and the approach are illustrated through two real case studies.     

Aerosol characteristics over Delhi national capital region: a satellite view

Multi-sensor aerosol data sets are analysed to examine the aerosol characteristics over the Delhi national capital region. Both the Multiple-angle Imaging Spectroradiometer (MISR) and Moderate Resolution Imaging Spectroradiometer (MODIS) capture the seasonal cycle of aerosol optical depth (AOD) as observed by ground-based measurements. However, AOD from MISR shows a low bias relative to AOD from MODIS, which increases linearly at high AOD conditions. A large difference (by >25 W m^–2 per unit AOD) in the top-of-atmosphere direct radiative forcing efficiency derived from MODIS and MISR-retrieved AOD is observed during the winter and pre-monsoon seasons relative to the other seasons. The ubiquitous presence of dust (as indicated by non-spherical particle fraction to AOD and linear depolarization ratio values) is observed throughout the year. The aerosol layer is mostly confined to within 2 km of surface in the winter and post-monsoon seasons, while it expands beyond 6 km in the pre-monsoon and monsoon seasons. Columnar AOD is found to be highly sensitive to aerosol vertical distribution. The applicability of multi-sensor data sets and climatic implications are discussed.     

Instrumentation and computer capabilities for improving sodar data acquisition

A computer program has been developed to exploit the multimedia capabilities of a personal computer for a new design of sodar (sonic detection and ranging) data acquisition and control system with minimized hardware elements. Advantages include trouble-free, cost-effective and user-friendly sodar data acquisition using any standard computer. The new design overcomes limitations due to using an add-on data acquisition card with conventional computer-controlled sodar. The data can be processed to produce online display of the dynamics of prevailing atmospheric boundary layer thermal structures and inversion/mixing depth for environmental applications.     

An analytical approach to dynamic crosstalk in coupled interconnects

This paper deals with waveform analysis, crosstalk peak and delay estimation of CMOS gate driven capacitively and inductively coupled interconnects. Simultaneously switching inputs for the coupled interconnects are considered. A transmission line-based coupled model of interconnect is used for analysis. Alpha-power Law model of MOS transistor is used to represent the transistors in CMOS driver. Peaks and delays at far-end of victim line are estimated for conditions when the inputs to the two coupled interconnects are switching in-phase and out-of-phase. The comparison of analytically obtained results with SPICE simulations show that the proposed model captures noise peak and their timing; 90% propagation delay; transition time delay and waveform shape with good accuracy, such as not more than 5% error in crosstalk peak estimation.     

Study of inductively coupled Cl2/BCl3 plasma process for high etch rate selective etching of via-holes in GaAs

We have investigated the selective etching of 50 μm diameter via-holes for etch depth >200 μm using 30 μm thick photo resist mask in Inductively Coupled Plasma system with Cl₂/BCl₃ chemistry. Resultant etch rate/etch profiles are studied as a function of ICP process parameters and photo resist mask sidewall profile. Etch yield and aspect ratio variation with process pressure and substrate bias is also investigated at constant ICP power. The etch yield of ICP process increased with pressure due to reactant limited etch mechanism and reached a maximum of ∼19 for 200 μm depth at 50 mTorr pressure, 950 W coil power, 80 W substrate bias with an etch rate ∼4.9 μm/min. Final aspect ratio of etched holes is increased with pressure from 1.02 at 20 mTorr to 1.38 at 40 mTorr respectively for fixed etch time and then decreased to 1.24 at 50 mTorr pressure. The resultant final etch profile and undercut is found to have a strong dependence on the initial slope of photo resist mask sidewall angle and its selectivity in the pressure range of 20-50mTorr.     

Thousand-Core Chips [Roundtable]

The 2007 Design Automation Conference (DAC) had a special session entitled "1000 Core Chips," which was organized by Radu Marculescu (Carnegie Mellon University) and Li-Shiuan Peh (Princeton University). This session examined some of the ramifications of multicore chip design from four perspectives: technology, architecture, programming, and design automation. In this roundtable, held immediately following the conference session, the presenters expounded on the future of multicore chips with respect to education, programming languages, operating systems, and design automation.     

Photoelectrochemical solar cell fabrication with tungsten diselenide single crystals

Recent reports on highly efficient photoelectrochemical solar cells withn-type WSe₂ have prompted us to grown-type single crystals of WSe₂ using a chemical vapour transport method. Different transporting agents have been used. It is seen that SeCl₄ transporter leads to very large single crystals ofp-type WSe₂, whereas the same transporting agent with excess amount of Se leads ton-type single crystals. PEC solar cells fabricated withp-type andn-type crystals thus grown have been reported and the results discussed.     

Growth of polysilicon and silicide films for MOS-VLSI application

Doped and undoped polycrystalline silicon films were grown byapcvd and thermal evaporation techniques. The effect of growth and annealing conditions on the crystalline nature of the films and their properties were studied by electrical, optical, x-ray diffraction andsem techniques. Metal silicides such as TiSi₂ and PtSi₂ were prepared by co-evaporation technique over polysilicon layers to study their suitability in microelectronic applications. Some of the properties of polysilicon and silicides are discussed.