An X-band high-efficiency MMIC power amplifier with 20-dBreturn losses

Describes the design principles and measured performance of an X-band high-efficiency monolithic-microwave-integrated-circuit (MMIC) power amplifier and discuss pertinent factors of the ion-implantation process. Also presented is a worst-case power prediction of the chip performance and a large-signal design using small-signal simulation. This balanced amplifier is fully monolithic with input and output return losses of better than 20 dB provided by Lange couplers. These return losses make it very convenient to cascade with other components. For high-efficiency operation, the drain voltage is 6 V. Across the 40% bandwidth from 8 to 12 GHz, the amplifier produces 1.6 to 2.1 W of output power at 33 to 40% power-added efficiency. For high-power operation, the drain voltage is 8.5 V. The amplifier can produce 2.4 to 2.8 W of output power at 26 to 29% power-added efficiency across the same 40% bandwidth     

Multiple output zero-current switching switched-capacitor bidirectional dc–dc converter

The proposed circuit is a multiple output quasi-resonant (QR) zero-current switching (ZCS) switched-capacitor (SC) converter with a bidirectional power flow control conversion scheme. The principles of the proposed multiple output QR ZCS SC bidirectional dc–dc converter are described using a detailed circuit model for analysis. Simulation and experimental results are carried out to verify the validity and the soft switching performance of the proposed converter. The maximum efficiency achievable is about 94 and 92% for the forward and reverse power flow control schemes, respectively. The output voltage can be regulated by changing the switching frequency for the designed compensated closed-loop controller.     

Carbazole and benzimidazole/oxadiazole hybrids as bipolar host materials for sky blue,green, and red PhOLEDs

Two novel bipolar host materials (CBzIm and COxaPh) comprising of a hole-transport (HT) carbazole core functionalized with electron-transport (ET) moieties (benzimidazole/oxadiazole) at C3 and C6 positions have been synthesized. Their thermal, photophysical, electrochemical properties, and carrier mobilities were characterized. Theoretical calculations revealed that the HOMO orbitals were generally delocalized over the hole- and electron-transport moieties for both CBzIm and COxaPh, whereas the LUMO orbitals distribution only involved one benzimidazole moiety in CBzIm instead of fully delocalization over the whole polar moieties for COxaPh, which is consistent with the observation of good hole mobilities for both hosts and better electron mobility for COxaPh over CBzIm. CBzIm with high E_T (2.76 eV) is suitable to serve as a blue phosphor host, where a sky blue phosphor (DFPPM)₂Irpic exhibiting superior properties than those of popular blue emitter FIrpic was used to give highly efficient phosphorescent OLEDs, achieving a maximum external quantum efficiency (η_ext) of 15.7%. The better π-delocalization of COxaPh led to a lower triplet energy (E_T = 2.65 eV), which can be used to accommodate green and red phosphors, providing excellent device performance with η_ext as high as 17.7% for green [(ppy)₂Ir(acac)] and 20.6% for red [Os(bpftz)₂(PPh₂Me)₂], respectively.     

Fabrication of a Large‐Area Al‐Doped ZnO Nanowire Array Photosensor with Enhanced Photoresponse by Straining

The photosensing properties of flexible large‐area nanowire (NW)‐based photosensors are enhanced via in situ Al doping and substrate straining. A method for efficiently making nanodevices incorporating laterally doped NWs is developed and the strain‐dependent photoresponse is investigated. Photosensors are fabricated by directly growing horizontal single‐crystalline Al‐doped ZnO NW arrays across Au microelectrodes patterned on a flexible SiO₂/steel substrate to enhance the transportation of carriers and the junction between NWs and electrodes. The Raman spectrum of the Al:ZnO NWs, which have an average diameter and maximum length of around 40 nm and 6.8 μm, respectively, shows an Al‐related peak at 651 cm^?1. The device shows excellent photosensing properties with a high ultraviolet/visible rejection ratio, as well as extremely high maximum photoresponsivity and sensitivity at a low bias. Increasing the tensile strain from 0 to 5.6% linearly enhances the photoresponsivity from 1.7 to 3.8 AW^?1 at a bias of 1 V, which is attributed to a decrease in the Schottky barrier height resulting from a piezo‐photonic effect. The high‐performance flexible NW device presented here has applications in coupling measurements of light and strain in a flexible photoelectronic nanodevice and can aid in the development of better flexible and integrated photoelectronic systems.     

Comparative physical and electrical metrology of ultrathin oxidesin the 6 to 1.5 nm regime

In this work, five methods for measuring the thickness of ultra-thin gate oxide layers in MOS structures were compared experimentally on n⁺ poly-SiO₂-p-Si structures. Three methods are based on electrical capacitance-voltage (C-V) and current-voltage (I-V) data and the other two methods are HRTEM and optical measurement. MOS capacitors with oxide thickness in the range 17-55 Å have been used in this study. We found that thickness extracted using QM C-V and HRTEM agree within 1.0 Å over the whole thickness range when a dielectric constant of 3.9 was used. Comparison between thickness extracted using quantum interference (QI) I-V technique and optical measurement were also within 1.0 Å for thickness 31-47 Å. However, optical oxide thickness was consistently lower than the TEM thickness by about 2 Å over the thickness range under consideration. Both optical measurement and QM C-V modeling yield the same thickness as the nominal oxide thickness increases (>50 Å)     

集成低功耗CMOS压控振荡器及其二分频器

实现了应用于无线局域网收发机的集成低功耗CMOS压控振荡器及其二分频器.压控振荡器是由在片对称螺旋型电感和差分容抗管组成的LC负阻型振荡器,而二分频器采用了ILFD结构.由于采用了差分LC元件和ILFD技术,整个电路的功耗很低.该电路已经用0.18μm CMOS工艺实现.测试结果表明该电路能产生低相位噪声的3.6/1.8GHz双带本振信号,并具有很宽的可控频率范围.当电源电压为1.5V时,该电路消耗了5mA的电流.芯片面积为1.0mm×1.0mm.     

Embedding RhPx in N,P Co‐Doped Carbon Nanoshells Through Synergetic Phosphorization and Pyrolysis for Efficient Hydrogen Evolution

Rational design and controllable synthesis of well‐defined nanostructures with high stability and Pt‐like activity for hydrogen evolution reaction (HER) are critical for renewable energy conversion. Herein, a unique pyrolysis strategy is demonstrated for the synthesis of RhP_x nanoparticles (NPs) in N, P co‐doped thin carbon nanoshells (RhP_x@NPC nanoshells) that display high electrocatalytic activity and stability over a wide pH range. This strategy involves simultaneous phosphorization and pyrolysis processes that can produce highly‐dispersed RhP_x NPs within N, P co‐doped carbon nanoshells and at the same time induce thinning of carbon nanoshells from inside out. The resulting RhP_x@NPC nanoshells not only possess Pt‐like activity for HER with low overpotentials to achieve 10 mA cm^?2 (22 mV in 0.5 m H₂SO₄, 69 mV in 1.0 m KOH, and 38 mV in 1.0 m phosphate buffered saline (PBS)) but also provide long‐term durability in a wide pH range. The remarkable HER performance of RhP_x@NPC nanoshells is ascribed to the high surface area, abundant mesoporosity, strong catalyst–support interaction, ultrathin carbon encapsulation, and N, P co‐doping. This work provides an effective strategy for designing heterostructured electrocatalysts with high catalytic activity and stability desired for reactions that may occur under harsh conditions.     

Tribotronics for Active Mechanosensation and Self‐Powered Microsystems

Tribotronics has attracted great attention as a new research field that encompasses the control and tuning of semiconductor transport by triboelectricity. Here, tribotronics is reviewed in terms of active mechanosensation and human–machine interfacing. As a fundamental unit, contact electrification field‐effect transistors are analyzed, in which the triboelectric potential can be used to control electrical transport in semiconductors. Several tribotronic functional devices have been developed for active control and information sensing, which has demonstrated triboelectricity‐controlled electronics and established active mechanosensation for the external environment. In addition, the universal triboelectric power management strategy and the triboelectric nanogenerator‐based constant sources are also reviewed, in which triboelectricity can be managed by electronics in the reverse action. With the implantation of triboelectric power management modules, the harvested triboelectricity by various kinds of human kinetic and environmental mechanical energy can be effectively managed as a power supply for self‐powered microsystems. In terms of the research prospects for interactions between triboelectricity and semiconductors, tribotronics is expected to demonstrate significant impact and potential applications in micro‐electro‐mechanical systems/nano‐electro‐mechanical systems (MEMS/NEMS), flexible electronics, robotics, wireless sensor network, and Internet of Things.     

Resource allocation for NOMA based D2D underlaid cellular networks

This paper puts forward a user clustering and power allocation algorithm for non-orthogonal multiple access (NOMA) based device-to-device (D2D) cellular system. Firstly, an optimization problem aimed at maximizing the sum-rate of the system is constructed. Since the optimization problem is a mixed-integer non-convex optimization, it is decomposed into two subproblems, namely user clustering and power allocation subproblem. In the subproblem of user clustering, the clustering algorithms of cellular user and D2D pair are proposed respectively. In the power allocation subproblem, the gradient assisted binary search (GABS) algorithm and logarithmic approximation in successive convex approximation (SCA) are used to optimize the power of subchannel (SC) and D2D transmitted power respectively. Finally, an efficient joint iterative algorithm is proposed for the original mixed inter non-convex non-deterministic polynomial (NP)-hard problem. The simulation results show that the proposed algorithm can effectively improve the total system rate and the larger the ratio of cellular users (CUs) to total users, the larger the total system rate.     

基于高斯滤波运动预测模型改进RSSI测距算法研究

在测距模型中有多种信号传播模型,经常被用到的是RSSI(Received Signal Strength Indication)测距.由于复杂的室内环境对信号的强度变化影响很大,传统的RSSI测距已经不能满足实际应用的需求,为了减小对实测信号的扰动,在RSSI基本测距算法的基础上,提出一种改进的RSSI测距算法——基于...