Transconductance and mobility of Si:B delta MOSFETs

Delta-doped MOSFETs have been fabricated in MBE-grown silicon using for the first time boron as the dopant within the delta layer. Current-voltage characteristics have been measured, and secondary ion mass spectrometry (SIMS) is used to confirm the location of the delta layer and the extent of layer broadening by diffusion during processing. Precise threshold voltages of the devices are difficult to determine since the devices (which all operate in depletion mode) take several volts to switch off. Transconductances of the devices have been measured, and it is shown how analysis of these results can yield estimates of the carrier mobility for transport along the delta layers despite the uncertainty in the threshold voltage. A clear transition is observed in the results which is attributed to the formation of a parasitic surface-channel field-effect transistor, providing conclusive evidence that the devices are conducting along a delta channel for part of the measured range of applied gate biases     

Slot antennas on photonic band gap crystals

The radiation patterns of a slot antenna placed on a photonic band gap crystal have been measured. We used a layer-by-layer photonic band gap crystal having a three-dimensional stop band between 12 and 15 GHz. The slot antenna radiation depends sensitively on the relative position and orientation of the slot in the surface unit cell of the photonic crystal. We have found configurations of the slot antenna with an increase of radiated power by 2-3 dB. The photonic band gap crystal can considerably improve the performance of a simple slot antenna     

The IEEE P1520 standards initiative for programmable networkinterfaces

This article discusses the need for standard software interfaces for programming of networks, specifically for service and signaling control, through programming interfaces. The objective is to enable the development of open signaling, control, and management applications as well as higher-level multimedia services on networks. The scope of this effort includes ATM switches, circuit switches, IP routers, and hybrid switches such as those that provide for fast switching of IP packets over an ATM backbone. The basic ideas represented herein are in the process of development as a standard for application programming interfaces for networks under IEEE Standards Project IEEE P1520     

Baselines for carbon emissions in the Indian and Chinese power sectors: Implications for international carbon trading

The study examines the dynamics of carbon emissions baselines of electricity generation in Indian states and Chinese provinces in the backdrop of ongoing electricity sector reforms in these countries. Two Indian states—Gujarat and Andhra Pradesh, and three Chinese provinces–Guangdong, Liaoning and Hubei have been chosen for detailed analysis to bring out regional variations that are not captured in aggregate country studies. The study finds that fuel mix is the main driver behind the trends exhibited by the carbon baselines in these five cases. The cases confirm that opportunities exist in the Indian and Chinese electricity sectors to lower carbon intensity mainly in the substitution of other fuels for coal and, to a lesser extent, adoption of more efficient and advanced coal-fired generation technology. Overall, the findings suggest that the electricity sectors in India and China are becoming friendlier to the global environment. Disaggregated analysis, detailed and careful industry analysis is essential to establishing a power sector carbon emissions baseline as a reference for CDM crediting. However, considering all the difficulties associated with the baseline issue, our case studies demonstrate that there is merit in examining alternate approaches that rely on more aggregated baselines.     

4D Printing of Shape Memory Materials for Textiles: Mechanism,Mathematical Modeling,and Challenges

Shape memory materials (SMMs) in 3D printing (3DP) technology garnered much attention due to their ability to respond to external stimuli, which direct this technology toward an emerging area of research, “4D printing (4DP) technology.” In contrast to classical 3D printed objects, the fourth dimension, time, allows printed objects to undergo significant changes in shape, size, or color when subjected to external stimuli. Highly precise and calibrated 4D materials, which can perform together to achieve robust 4D objects, are in great demand in various fields such as military applications, space suits, robotic systems, apparel, healthcare, sports, etc. This review, for the first time, to the best of the authors’ knowledge, focuses on recent advances in SMMs (e.g., polymers, metals, etc.) based wearable smart textiles and fashion goods. This review integrates the basic overview of 3DP technology, fabrication methods, the transition of 3DP to 4DP, the chemistry behind the fundamental working principles of 4D printed objects, materials selection for smart textiles and fashion goods. The central part summarizes the effect of major external stimuli on 4D textile materials followed by the major applications. Lastly, prospects and challenges are discussed, so that future researchers can continue the progress of this technology.     

Information-Bearing Noncoherently Modulated Pilots for MIMO Training

In this correspondence, we deal with noncoherent communications over multiple-input-multiple-output (MIMO) wireless links. For a Rayleigh flat block-fading channel with M transmit- and N receive-antennas and a channel coherence interval of length T, it is well known that for TGtM, or, at high signal-to-noise-ratio (SNR) rhoGt1 and Mlesmin{N,lfloorT/2rfloor}, unitary space-time modulation (USTM) is capacity-achieving, but incurs exponential demodulation complexity in T. On the other hand, conventional training-based schemes that rely on known pilot symbols for channel estimation simplify the receiver design, but they induce certain SNR loss. To achieve desirable tradeoffs between performance and complexity, we propose a novel training approach where USTM symbols over a short length T_tau(tau is a small fraction of T, and recovers part of the SNR loss experienced by the conventional training-based schemes. When rhorarrinfin and TgesT_tau ges2M=2Nrarrinfin, but the ratios alpha=M/T, alpha₁ =T_tau/T are fixed, we obtain analytical expressions of the asymptotic SNR loss for both the conventional and new training-based approaches, serving as a guideline for practical designs     

Energy-efficient,EDFA lifetime-aware network planning along with virtualized elastic regenerator placement for IP-over-EON

Photonic Network Communications - In this paper, we focus on energy-efficient network planning (including traffic provisioning) along with optimal placement of virtualized elastic regenerators...     

A networked mobile sensor test-bed for collaborative multi-target tracking applications

This paper presents the design, architecture, implementation, and experimental results from a networked mobile sensor test-bed developed for collaborative sensor tracking applications. The test-bed comprises a fleet of networked mobile sensors, an indoor localization system, a control, debugging and management infrastructure, and a tiered wireless ad hoc network for seamless integration of the above three components and the existing wireless infrastructure. First, the software and hardware architectural details of a swarm capable autonomous vehicle (SCAV) system for our collaborative applications are presented. Second, the details of an indoor self-localization and Kalman filter based navigation system design for the SCAV platform are presented. Third, as an example multi-sensor application, a collaborative multi-target tracking problem and a heuristics-based networked solution are formulated. Finally, the performance of the collaborative tracking framework is evaluated on the laboratory test-bed for characterizing the impacts of localization and navigation errors on the distributed tracking performance. The experimental study also characterizes the tradeoff between the tracking performance and the consumed wireless bandwidth. The experimental results demonstrate a number of counterintuitive results due to various errors in sensor localization and navigation.     

Multiple material domain‐based computational tools for ease assessment of modal parameter in photonic crystal fibers

We report here the development of two computational tools PCFPS (Photonic Crystal Fiber Parameter Study) and PCFPA (Photonic Crystal Fiber Parameter Analysis), equipped with graphical user interface (GUI) for modeling of photonic crystal fiber. The tools are based on different structural parameters, and they provide characteristic analysis of the modal parameters from the structural parameters. The main feature of PCFPS is that it enables the user to find out the values of each defining modal parameter that has an immense contribution towards the manufacture of photonic crystal fiber. Additionally, PCFPA allows the user to observe the variation in the modal parameters with respect to the changes in structural parameters (such as d, Λ, d/Λ, and λ/>Λ). Besides their ease of use, these two schemes have high computational precision and adaptability, giving a novel platform to optical engineers to modulate the microstructured fibers according to their requirement.     

Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current-voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.