WiMAX技术及其在固定电信网中应用的探讨

本文阐述了WiMAX技术的优势和组网方式,通过案例分析了WiMAX技术提供的多种应用方案和演进路线,认为WiMAX与3G是相辅相成的,总结了WiMAX推广应用存在的问题.     

An Investigation of Negative Differential Resistance and Novel Collector–Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures

In this paper, a new negative-differential-resistance (NDR) effect and a novel collector-current kink effect are investigated in the cryogenically operated SiGe heterojunction bipolar transistors (HBTs). Theory based on an enhanced positive-feedback mechanism associated with heterojunction barrier effect at deep cryogenic temperatures is proposed to explain both the observed NDR and the collector-current kink. The accumulated charge induced by the barrier effect acts at low temperatures to enhance the total collector-current, indirectly producing both phenomena. This theory is confirmed using the calibrated 2-D DESSIS simulations over temperature. These unique cryogenic effects also have significant impact on the ac performance of SiGe HBTs operating at high injection. Technology evolution plays an important role in determining the magnitude of the observed phenomena, and the scaling implications are addressed. In addition, the present NDR effect is also compared with previously reported NDR and hysteresis effects observed in highly scaled SiGe HBTs operating under forced-I_B-base bias. The input drive condition of the transistor during its use in circuits, either under pure forced-current bias or under pure forced-voltage bias, or more practically, somewhere in between, determines the magnitude of the observed NDR and is of potential concern for circuit designers and must be carefully modeled     

共振隧穿二极管的设计、研制和特性分析

用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.经过材料生长设计和工艺的改进,测得室温下器件的最高PVCR为2.4,峰值电流密度达到36.8kA/cm2.进行直流参数测试,得到RTD的I-V特性曲线,对量子阱宽度和帽层厚度对I-V特性的影响进行了分析.     

基于Loeffler算法的2-D DCT IP软核设计

提出一种基于Loeffler算法的2-D DCT IP软核设计方法.用移位和加法运算代替乘法运算.为减少芯片占用面积,对乘法系数采用CSD编码,1-D DCT复用技术;为提高电路的速度,采用流水线结构,优化转置矩阵.基于上述算法,设计了用Verilog HDL语言描述的IP软核.对软核进行了编译、综合、布局布线和后仿真,验证了算法的正确性.实验结果显示最高工作频率可以达到139.43MHz,能够满足视频图像压缩的实时性要求.     

Identification of reduced-order thermal therapy models using thermal MR images: theory and validation

In this paper, we develop and validate a method to identify computationally efficient site- and patient-specific models of ultrasound thermal therapies from MR thermal images. The models of the specific absorption rate of the transduced energy and the temperature response of the therapy target are identified in the reduced basis of proper orthogonal decomposition of thermal images, acquired in response to a mild thermal test excitation. The method permits dynamic reidentification of the treatment models during the therapy by recursively utilizing newly acquired images. Such adaptation is particularly important during high-temperature therapies, which are known to substantially and rapidly change tissue properties and blood perfusion. The developed theory was validated for the case of focused ultrasound heating of a tissue phantom. The experimental and computational results indicate that the developed approach produces accurate low-dimensional treatment models despite temporal and spatial noises in MR images and slow image acquisition rate.     

基于清流备播的数字电视应急处理系统研究

为保障数字电视的不间断播出,本文对基于清流备播的数字电视应急处理系统进行了研究,包括:背景分析、加入清流备播系统后的数字电视前端平台架构、清流备播系统架构以及基于清流备播系统的数字电视应急处理系统架构。     

In-Au复合焊料研究

大功率半导体激光器封装过程中,为降低封装引入的应力,踊般用In焊料进行焊接。In焊料具有易氧化、易"攀爬"的特性,因而导致封装成品率很低。提出了一种新型焊料——In-Au复合焊料,使用此焊料进行封装,很好地解决了上述问题。通过理论分析及实验摸索,确定了In-Au复合焊料蒸发条件,分别利用纯In焊料和In-Au复合焊料封装了一批激光器样品,通过对比这两组样品的焊料浸润性、电光参数、剪切强度等,发现利用In-Au复合焊料封装的样品优于纯In焊料封装的样品。     

AlGaN/GaN HEMT 2DEG电致耦合模型的研究

传统计算AlGaN/GaN异质结二维电子气(2DEG)的方法是根据Hooke定律计算c轴方向压应变与拉应变,然后利用压电模量计算出不依赖于栅压的2DEG,称为非耦合模型计算.提出了一种电致耦合模型来计算2DEG,在计算过程中考虑到弛豫度与附加电场对材料压电效应的影响,结果发现,当Al组分x=0.30时,压电极化电荷密度低于传统方法的计算值,两种模型的计算值相差7.17%,由此可见,当电场作用于材料时,材料产生逆压电效应,最终导致压电极化电荷密度降低.     

Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter-Dot Coupling and Efficient Passivation

Lead chalcogenide quantum dot (QD) infrared (IR) solar cells are promising devices for breaking through the theoretical efficiency limit of single-junction solar cells by harvesting the low-energy IR photons that cannot be utilized by common devices. However, the device performance of QD IR photovoltaic is limited by the restrictive relation between open-circuit voltages (V_OC) and short circuit current densities (J_SC), caused by the contradiction between surface passivation and electronic coupling of QD solids. Here, a strategy is developed to decouple this restriction via epitaxially coating a thin PbS shell over the PbSe QDs (PbSe/PbS QDs) combined with in situ halide passivation. The strong electronic coupling from the PbSe core gives rise to significant carrier delocalization, which guarantees effective carrier transport. Benefited from the protection of PbS shell and in situ halide passivation, excellent trap-state control of QDs is eventually achieved after the ligand exchange. By a fine control of the PbS shell thickness, outstanding IR J_SC of 6.38 mA cm⁻² and IR V_OC of 0.347 V are simultaneously achieved under the 1100 nm-filtered solar illumination, providing a new route to unfreeze the trade-off between V_OC and J_SC limited by the photoactive layer with a given bandgap.