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61.
This paper reports the findings of a detailed study of Web-based systems design (WBSD) practices in Ireland based on data collected over a 3-year period (2002–2005), the objectives of which were to (1) contribute towards a richer understanding of the current “real-world” context of WBSD by characterising the profile of a typical project (team size, timeframe, nature of requirements, etc.) and identifying the key challenges, constraints, and imperatives (i.e. “mediating factors”) faced by Web-based system designers, and (2) understand how those contextual parameters and mediating factors influence the activity of WBSD as regards the selection and enactment of whatever design practices are therefore engaged (i.e. the use of methods, procedures, etc.). Data was gathered through a survey which yielded 165 usable responses, and later through a series of semi-structured qualitative interviews. Using grounded theory, an explanatory conceptual framework is derived, based on an extension of the “method-in-action” model, the application of which to WBSD has not been previously investigated in depth. It is proposed that this framework of WBSD issues is valuable in a number of ways to educators, researchers, practitioners, and method engineers.  相似文献   
62.
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (fT) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region  相似文献   
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The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF 6/Ar mixtures. It was found that while the plug loading effect is independent of varying SF6/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology  相似文献   
65.
Influence of grain size on mechanical properties and dry oscillating sliding wear of Al2O3-ceramics Specimens with average grain sizes varying between about 0.8 μm and 12 μm were produced by cold isostatic pressing of high purity Al2O3-powder followed by sintering between 1300°C and 1700°C. Hardness, Young's modulus, bending strength and fracture toughness were measured as a function of average grain sizes. Tribological tests were carried out on the different microstructures at normal laboratory air and room temperature by using a ring-on-block tribometer. Experimental results showed the dependence of mechanical properties on grain size, hardness and bending strength obeying a Hall-Petch type relation, approximately. Coefficient of friction was relatively independent of grain size under the test conditions used. However, wear intensity increased substantially if a critical grain size was surpassed. This was due to a change in mechanisms of material removal which was confirmed by scanning electron microscopical studies of the worn surfaces.  相似文献   
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The Error-in-Variables Model (EVM) applies to a large class of problems in parameter estimation in which there is error in all the variables. This property makes it of more general applicability than the widely used technique of ordinary Least Squares. While there is a voluminous literature on EVM there is nothing on a general method for designing experiments when EVM applies. In this paper we present an extension of the concept of D-optimality to provide such a general method. It is illustrated by applying it to the estimation of copolymer reactivity ratios and to fitting an ellipse.  相似文献   
68.
Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.  相似文献   
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