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31.
A GaAs avalanche photodiode with a multiplication factor as high as 8000 was prepared by Zn diffusion and proton double implantation. The proton-implanted guard ring completely prevented edge breakdown, and multiplication occurred uniformly over the junction area. Dark current was proved to be due to a leakage current at the periphery between junction and implanted layer.  相似文献   
32.
We have studied the growth of silicon nanowires (SiNWs) by means of transmission electron microscopy. SiNWs are grown from nanocatalysts via the Vapor-Liquid-Solid (VLS) mechanism using silane (SiH4) gas as a source gas. The nanocatalysts are prepared on a hydrogen (H)-terminated Si surface. We have examined the formation mechanism of nanocatalysts on H-terminated surface and have observed several structural variants of SiNWs. According to the study we have suggested that many structural variations of SiNWs are possible, which modify the structural properties of SiNWs to great extents.  相似文献   
33.
Two monoalkenes were detected in gizzard shad (Clupanodon punctatus) and sardine (Sardinops melanosticta) by gas chromatography and were identified by combined gas chromatography-mass spectrometry of their cyclic boronate and dioxolane derivatives ascis-6-n-heptadecene andcis-8-n-nonadecene.  相似文献   
34.
The thickness of the glass substrate used in liquid crystal displays continues to be decreased from its original thickness of 1.1 mm for the purpose reducing size and weight. The aim of this study was to clarify the influence of the glass substrate thickness during laser scribing with crack propagation caused by laser heating followed by quick quenching. The laser scribe conditions for soda-lime glass substrates with thickness equal to or less than 1.1 mm were obtained in laser irradiation experiments. Two-dimensional thermal elasticity analysis was conducted with a finite element method based on the scribable conditions obtained in the experiment. The laser scribable conditions can then be estimated by the upper limit of the maximum surface temperature, Tmax, and the lower limit of the maximum tensile stress, σtmax, in the cooling area, regardless of the glass substrate thickness. There is a substrate thickness with which the maximum tensile stress σtmax becomes the largest under each scribe condition. The substrate thickness with which σtmax becomes the largest is obtained at a faster scribe velocity for thinner glass substrate and at slower scribe velocity for thicker glass substrate. Owing to these relations, the crack depth also has almost the same tendency as σtmax.  相似文献   
35.
The feasibility of a method to monitor biofilm development non-destructively in a microfluidic device was addressed. Here, we report that biofilm growth could be non-destructively monitored by an image analysis technique based on modification of confocal reflection microscopy.  相似文献   
36.
The performance of the Taylor‐Couette flow apparatus as a heat sterilizer is numerically investigated. The destruction of Clostridium botulinum and thiamine (vitamin B1) was selected as model reaction. When Taylor vortices were formed in the annular space, the heat transfer significantly enhanced as compared to the case without vortex flow. As a result, the equivalent lethality calculated from the temperature field increased, which is regarded as a quantum leap. Conversely, the improvement of heat transfer induced destruction of thiamine. These results suggest that there is a trade‐off relationship between the enhancement of heat transfer and the avoidance of thermal destruction of nutritional components. In conclusion, the Taylor‐Couette flow sterilizer has the potential for process intensification in heat sterilization processes.  相似文献   
37.
It is essential to understand the size scaling effects on the mechanical properties of graphene networks to realize the potential mechanical applications of graphene assemblies. Here, a “highly dense‐yet‐nanoporous graphene monolith (HPGM)” is used as a model material of graphene networks to investigate the dependence of mechanical properties on the intrinsic interplanar interactions and the extrinsic specimen size effects. The interactions between graphene sheets could be enhanced by heat treatment and the plastic HPGM is transformed into a highly elastic network. A strong size effect is revealed by in situ compression of micro‐ and nanopillars inside electron microscopes. Both the modulus and strength are drastically increased as the specimen size reduces to ≈100 nm, because of the reduced weak links in a small volume. Molecular dynamics simulations reveal the deformation mechanism involving slip‐stick sliding, bending, buckling of graphene sheets, collapsing, and densification of graphene cells. In addition, a size‐dependent brittle‐to‐ductile transition of the HPGM nanopillars is discovered and understood by the competition between volumetric deformation energy and critical dilation energy.  相似文献   
38.
We have successfully developed a cosmetic film with polymerized cholesteric material. The film features a variety of colors by helical pitch gradients, diffusive texture, and arbitrary color patterns. It hides the display when turned off, and transmits display images when turned on. We believe it could change the display in the OFF‐state from the conventional black wall to specially designed decorations. In addition, they can be applied to hidden sensors.  相似文献   
39.
Abstract

Patients with gait disorders often use bilateral crutches along with their own two legs. It is a kind of quadrupedalism. Crutch-assisted gait is usually described and evaluated qualitatively. In this study, we developed a system to quantify the spatial and temporal parameters for crutch-assisted quadrupedalism. Our system consists of walkway hardware and our originally developed software. We specifically extended the measurable area to 1200 mm × 4800 mm, large enough to measure crutch gait. Using our system, we could describe crutch gait precisely. Our system has a capability to evaluate differences between patients and changes within a patient.  相似文献   
40.
An electron-beam-induced-current technique has been applied to scanning transmission electron microscopy to characterize GaN/AlGaN/n-Si heterostructures. The structure was formed by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. Two samples with nominal intermediate layer thicknesses of 60 and 120 nm were studied. It was found that there is a junction in the n-type Si region underneath the nitride/Si interface irrespective of the intermediate layer thickness, whereas induced current occurred neither in the nitride region nor at the nitride/Si interface. The junction formed was found to be undulated. The sample with the thin intermediate layer had undulations of a shorter periodicity than that with the thick intermediate layer. The formation of the junction is attributed to the diffusion of Al during the nitride growth.  相似文献   
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