Upper and lower critical solution temperatures in poly (ethylene glycol) solutions

Upper and lower critical solution temperatures have been determined for solutions of poly(ethylene glycol) in t-butyl acetate and water over the molecular weight range of M_η = 2.18 × 10³ to ～1020 × 10³. The phase diagram for solutions of poly(ethylene glycol) (M_η = 719 × 10³) in t-butyl acetate was expressed as the ‘hour glass’ type, while the phase diagram for solution of poly(ethylene glycol) (M_η = 2.18 × 10³ to ～2.29 × 10³) in water was expressed as the ‘closed loop’ type. The value of the pressure dependence of the lower critical solution temperature $\text{(}\text{d}\text{T}\text{d}\text{P}\text{)}{}_{\mathrm{c}}$ in the poly(ethylene glycol) (M_η = 1020 × 10³)/water system over the pressure range of 0 to ～50 atm was negligibly small and positive.     

Graft copolymerization of styrene onto cellulose acetate p-nitrobenzoate by chain transfer reaction

Styrene was grafted onto cellulose acetate p-nitrobenzoate (CANB) by chain transfer reaction of growing polymer radicals to the pendant nitro groups of CANB. A copolymer with a branch for every 17.2 nitro groups was obtained. This result indicates that the pendant aromatic nitro group is more effective in obtaining a graft copolymer by radical mechanism than pendant double bond on the trunk polymer previously reported, where graft copolymers with a branch for several hundred of double bonds are produced.     

Half-data-page insertion method for increasing recording density in angular multiplexing holographic memory

We have developed a method to use a half-size data page between two full-size data pages to increase the recording density in angular multiplexing holographic memory up to 1.5× as much as the conventional angular multiplexing sequence. In our recording sequence, the full- and half-size data pages are alternately multiplexed. This is because each plane wave from various points in a data page has different angular selectivity. A half-size data page has higher angular selectivity than a full-size data page. The required angular intervals were estimated by numerical simulation taking holographic medium tilt into account. Also, an angular multiplexing experiment using the half-data-page insertion method resulted in a low bit error rate of the order of 10(-3), which is sufficient for practical use.     

Characterization of silicon dioxide films on a 4H-SiC Si(0001) face by fourier transform infrared (FT-IR) spectroscopy and cathodoluminescence spectroscopy

We used Fourier transform infrared (FT-IR) spectroscopy to characterize silicon dioxide (SiO(2)) films on a 4H-SiC(0001) Si face. We found that the peak frequency of the transverse optical (TO) phonon in SiO(2) films grown on a 4H-SiC substrate agrees well with that in SiO(2) films grown on a Si substrate, whereas the peak frequency of the longitudinal optical (LO) phonon in SiO(2) films on a 4H-SiC substrate is red-shifted by approximately 50 cm(-1) relative to that in SiO(2) films on a Si substrate. We concluded that this red-shift of the LO phonon is mainly caused by a change in inhomogeneity due to a decrease in density in the SiO(2) films. Furthermore, cathodoluminescence (CL) spectroscopy results indicated that the channel mobility of the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) decreases roughly in proportion to the increase in the intensity of the CL peak at 460 and 490 nm, which is attributed to the increase in the number of oxygen vacancy centers (OVCs). FT-IR and CL spectroscopies provide us with a large amount of data on OVCs in the SiO(2) films on a 4H-SiC substrate.     

Crystal growth and scintillation properties of Nd-doped Lu3Al5O12 single crystals with different Nd concentrations

Nd 0.1%, 0.5%, 1% and 3% doped Lu₃Al₅O₁₂ (Nd:LuAG) single crystals were grown in the nitrogen atmosphere by the micro-pulling down (μ-PD) method. The grown crystals had a single-phase confirmed by powder XRD analysis. In absorption spectra, some weak absorption lines due to Nd³⁺ 4f-4f transitions were observed and their intensity increased with the increase of Nd concentration. When excited by ²⁴¹Am α-ray, a broad emission peak due to defects in the host lattice at 320 nm and some sharp lines due to Nd³⁺ 4f-4f transitions at wavelength longer than 400 nm were observed. The decay time profiles of Nd:LuAG under γ-ray excitation were well approximated by two exponential function of 340-760 ns and 3-5 μs for each sample. By pulse height measurement using ¹³⁷Cs, Nd 0.5%:LuAG showed the highest light yield of 7600 ± 760 photons/MeV.     

Heat Generation in Multilayer Piezoelectric Actuators

Multilayer piezoelectric actuators when driven under high frequency, generate significant heat, which influences the reliability and other piezoelectric properties. In this paper, heat generation in various types of multilayer PZT-based actuators was studied. Experimental results showed that heat generation is mainly caused by ferroelectric hysteresis loss in the stress-free state. A simplified analytic method was established to evaluate the temperature rise, which is useful for the design of multilayer and other high-power actuators.     

Superoxidation and Electrochemical Reactions during Switching in Pb(Zr2Ti)O3 Ceramics

Under ferroelectric switching in Pb(Zr₂Ti)O₃ (PZT) ceramics, we demonstrate that oxygen gas is emitted and degrades electrode microstructure. The oxygen is a direct result of the defect chemistry associated with superoxidation which is established during the processing of the ceramics. Under high alternating electric fields, electron injection into the ceramic surface induces a reduction process, and surface layers are believed to change from a p-type electronic compensation to an ionic compensation of oxygen vacancies and A-site lead vacancies. During this process, we noticed progressive changes in capacitance, loss, remnant polarization, and coercive field. The wider implications of this observation for PZT thin film nonvolatile memories are discussed in brief.