Heat transfer in a confined rectangular cavity packed with porous media

This paper presents an experimental investigation of convective heat transfer in a confined rectangular cavity packed with porous media, on the opposing vertical walls of which different temperatures are imposed. Measurements are made for each of two kinds of solid particles using three kinds of fluids, i.e. water, transformer oil and ethyl alcohol. The present experiments cover a wide range of Rayleigh number Ra1 between 1 and 10⁵, Prandtl number Pr1 between 1 and 200 and geometrical aspect-ratio $\text{H}\text{W}$ between 5 and 26. The experimental results indicate that Nusselt number Nu1 is correlated by the following relationship: $\text{Nu1 = 0.627 Pr1}{}^{0.130}\text{(}\text{H}\text{W}\text{)}{}^{\mathrm{?0.527}}\text{Ra1}{}^{0.463}$     

Formation of a new catalyst (Saechol) for coal hydrogenation on the surface of molybdenum alloys by catechol treatment

For the hydrogenation of Japanese Taiheiyo coal, a new catalyst, Saechol, formed on the surfaces of blades made from molybdenum-containing alloys such as SUS316, SCM3 and SKH9 showed significant activity. The activity survived in the flame but was lost easily by washing in 6N hydrochloric acid. The activity was easily regenerated. Several procedures for generation of activity are reported.     

Characterization of silicon dioxide films on a 4H-SiC Si(0001) face by fourier transform infrared (FT-IR) spectroscopy and cathodoluminescence spectroscopy

We used Fourier transform infrared (FT-IR) spectroscopy to characterize silicon dioxide (SiO(2)) films on a 4H-SiC(0001) Si face. We found that the peak frequency of the transverse optical (TO) phonon in SiO(2) films grown on a 4H-SiC substrate agrees well with that in SiO(2) films grown on a Si substrate, whereas the peak frequency of the longitudinal optical (LO) phonon in SiO(2) films on a 4H-SiC substrate is red-shifted by approximately 50 cm(-1) relative to that in SiO(2) films on a Si substrate. We concluded that this red-shift of the LO phonon is mainly caused by a change in inhomogeneity due to a decrease in density in the SiO(2) films. Furthermore, cathodoluminescence (CL) spectroscopy results indicated that the channel mobility of the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) decreases roughly in proportion to the increase in the intensity of the CL peak at 460 and 490 nm, which is attributed to the increase in the number of oxygen vacancy centers (OVCs). FT-IR and CL spectroscopies provide us with a large amount of data on OVCs in the SiO(2) films on a 4H-SiC substrate.     

A [meso-tetrakis(4-sulfonatophenyl)porphyrinato]zinc(ii) complex as an oral therapeutic for the treatment of type 2 diabetic KKA(y) mice

We prepared and characterized [meso-tetrakis(4-sulfonatophenyl)porphyrinato]zinc(II) ([Zn(tpps)]), and investigated its in vitro insulin-mimetic activity and in vivo hypoglycemic effect in type 2 diabetic KKA(y) mice. The results were compared with those of previously proposed insulin-mimetic zinc(II) complexes and zinc sulfate (ZnSO(4)). The in vitro insulin-mimetic activity of [Zn(tpps)] was considerably better than that of bis(allixinato)zinc(II) ([Zn(alx)(2)]), bis(maltolato)zinc(II) ([Zn(mal)(2)]), bis(2-aminomethylpyridinato)zinc(II) ([Zn(2-ampy)(2)](2+)), and ZnSO(4). In particular, the order of in vitro insulin-mimetic activity of the complexes was determined to be: [Zn(tpps)]>[Zn(alx)(2)]>[Zn(mal)(2)]>[Zn(2-ampy)](2+)>ZnSO(4). [Zn(tpps)] normalized the hyperglycemia of KKA(y) mice within 21 days when administered orally at doses of 10-20 mg (0.15-0.31 mmol) Zn per kg body mass for 28 days. In addition, metabolic syndromes such as insulin resistance, the degree of renal disturbance, and the degree of liver disturbance were significantly improved in [Zn(tpps)]-treated KKA(y) mice relative to those administered with saline and ZnSO(4). The improvement in diabetes was validated by the results of oral glucose-tolerance tests and the decrease in the HbA(1c) level observed. In contrast, ZnSO(4) and the ligand H(2)tpps did not lower the elevated blood glucose level under the same experimental conditions. Based on these observations, [Zn(tpps)] is proposed to be the first orally active zinc(II)-porphyrin complex for the efficacious treatment of not only type 2 diabetes but also metabolic syndromes in animals.     

A 62-ns 16-Mb CMOS EPROM with voltage stress relaxation technique

To meet the increasing demand for higher-density and faster EPROMs, a 16-Mb CMOS EPROM has been developed based on 0.6-μm N-well CMOS technology. In scaled EPROMs, it is important to guarantee device reliability under high-voltage operation during programming. By employing internal programming-voltage reduction and new stress relaxation circuits, it is possible to keep an external programming voltage V_pp of 12.5 V. The device achieves a 62-ns access time with a 12-mA operating current. A sense-line equalization and data-out latching scheme, made possible by address transition detection (ATD), and a bit-line bias circuit with two types of depletion load led to the fast access time with high noise immunity. This 16-Mb EPROM has pin compatibility with a standard 16-Mb mask-programmable ROM (MROM) and is operative in either word-wide or byte-wide READ mode. Cell size and chip size are 2.2 μm×1.75 μm and 7.18 mm×17.39 mm, respectively     

Dye-sensitized solar cell made of mesoporous titania by surfactant-assisted templating method

Nanocrystalline mesoporous titania was obtained by surfactant-assisted templating method using tetraisopropyl orthotitanate modified with acethylacetone and laurylamine hydrochloride as template. This material was applied for the electrode of dye-sensitized solar cell. The mesoporous TiO₂ (MP-TiO₂) cells exhibited higher short-circuit photocurrent density and solar energy conversion efficiency compared to P25 (a typical commercial titania powder) cells. The incident photon to current conversion efficiency spectrum of MP-TiO₂ can be improved by using the cell made with 5% P25 additive. Double-layer titania cells were fabricated to further improve cell performance by increasing the film thickness and light scattering. The solar conversion efficiency up to 8.06% was obtained by using the double-layer titania cell sintered at 450 °C for 2 h.     

Effect of catch cup geometry on 3D boundary layer flow over the wafer surface in a spin coating

Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor instruments become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped photoresist scarers outward and reattaches on the film surface. A catch cup is set up outside the wafer in spin coating, and scattered photoresist mist is removed from the wafer edge by the exhaust flow generated at the gap between the wafer edge and the catch cup. In the dry process of a spin coating, it is a serious concern that the film thickness increases near the wafer edge in the case of low rotating speed. The purpose of this study is to make clear the effect of the catch cup geometry on the 3D boundary layer flow over the wafer surface and the drying rate of liquid film.     

In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

GaN surface stoichiometry and growth kinetics in MOVPE were studied by in-situ spectroscopic ellipsometry. The effect of MOVPE conditions on both the surface stoichiometry and growth kinetics was investigated. The surface stoichiometry, such as N-rich, Ga-rich and Ga-excess surfaces, was monitored, and was drastically changed by the variation of the NH₃ partial pressure. When the TMG supply was interrupted during the growth, the layer-by-layer decomposition/revaporation was observed in H₂/NH₃ ambient. The decomposition rate was measured as a function of the NH₃ flow rate at the conventional epilayer growth temperatures (1050–1140 C). The decomposition rate was decreased with the increase in the N coverage on the GaN surface. it was found that the surface stoichiometry is a very important parameter for the control of the MOVPE growth kinetics.