Broad-band MMICs based on modified loss-compensation method using 0.35-/spl mu/m SiGe BiCMOS technology

Using the concept of loss compensation, novel broad-band monolithic microwave integrated circuits (MMICs), including an amplifier and an analog multiplier/mixer, with LC ladder matching networks in a commercial 0.35-mum SiGe BiCMOS technology are demonstrated for the first time. An HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented. It demonstrates a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm² including testing pads. The gain-bandwidth product of the modified loss-compensated CSSDA is improved approximately 68% compared with the conventional attenuation-compensation technique. The wide-band amplifier achieves a high gain-bandwidth product with the lowest power consumption and smallest chip size. The broad-band mixer designed using a Gilbert cell with the modified loss-compensation technique achieves a measured power conversion gain of 19 dB with a 3-dB bandwidth from 0.1 to 23 GHz, which is the highest gain-bandwidth product of operation among previously reported MMIC mixers. As an analog multiplier, the measured sensitivity is better than 3000 V/W from 0.1 to 25 GHz, and the measured low-frequency noise floor and corner frequency can be estimated to be 20 nV/sqrt(Hz) and 1.2 kHz, respectively. The mixer performance represents state-of-the-art result of the MMIC broad-band mixers using commercial silicon-based technologies     

APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

In-Situ observation on microfracture behavior ahead of the crack tip in 63Sn37Pb solder alloy

in-situ transmission electron microscopy (TEM) tensile tests on as-cast and aged 63Sn37Pb solder alloys were conducted, and the fracture behavior in nanometer scale ahead of the crack tip was inspected and discussed. Results show that the fracture was completed by connecting the discontinuous cracks or voids. Dislocation behavior was concentrated along the grain boundaries for as-cast samples, and displayed mainly as dislocation climb. The crack was intergranular dominated under the lower strain rate. While remarkable mutual dislocation emission was detected in the aged solder. Transgranular cracks were dominant in the fractured area, and they propagated by linking up with the nanometer scale cracks ahead of the crack tips under the effective promotion of the inverse dislocation emission. At the same time, the partial interphase or intergranular cracks in the thinned area were also found. Under this condition, a new critical stress intensity factor K _c ^′ to define the mutual dislocation emission was proposed.     

Amorphous diffusion bonding of steel pipe and its impact toughness

An iron-based amorphous foil (FeNiCrSiB) was used as an interlayer for the amorphous diffusion bonding of low carbon steel pipes under argon flux. The microstructure and mechanical properties of the joint were analyzed using an electron probe micro-analyzer (EPMA), tensile test, bending test and impact test. The results show that the joint microstructure resembles that of the base metal and no precipitates form at the joint. Melting point depressants (B, Si) diffuse far away from the joint and the base metal element is homogenous across the joint. The joint impact toughness is greater than the base metal toughness and the mechanical properties of the joint are similar around the pipe.