Nickel Oxide Based Supported Catalysts for the In-situ Reactions of Methanation and Desulfurization in the Removal of Sour Gases from Simulated Natural Gas

Supported nickel oxide based catalysts were prepared by wetness impregnation method for the in-situ reactions of H₂S desulfurization and CO₂ methanation from ambient temperature up to 300 °C. Fe/Co/Ni (10:30:60)–Al₂O₃ and Pr/Co/Ni (5:35:60)–Al₂O₃ catalysts were revealed as the most potential catalysts, which yielded 2.9% and 6.1% of CH₄ at reaction temperature of 300 °C, respectively. From XPS, Ni₂O₃ and Fe₃O₄ were suggested as the surface active components on the Fe/Co/Ni (10:30:60)–Al₂O₃ catalyst, while Ni₂O₃ and Co₃O₄ on the Pr/Co/Ni (5:35:60)–Al₂O₃ catalyst.     

Synthesis and physicochemical investigation of chitosan-built hydrogel with induced glucose sensitivity

There is an urgent need to treat diabetes, and therefore, this work reports on a chitosan-built hydrogel functionalized by a glucose sensing moiety, which simulates pancreatic activity. The effect of external stimuli on various internal properties was investigated to establish the action of the hydrogel. The model drugs, fluorescein (D1) and rhodamine (D2), with a diol architecture, were investigated spectroscopically with 75.94% loading and 65.63% release. Consequently, a ligand to glucose ratio of 2:1 in comparison with a ligand to model drug ratio of 1:1 was addressed. The system was expected to lead to findings on applications for the self-controlled release of insulin in response to blood glucose levels.     

Effect of silicon and heat-treatment temperature on the morphology and mechanical properties of silicon - substituted hydroxyapatite

The precipitation method was used to synthesize silicon-substituted hydroxyapatite with different Si contents of 0.4, 0.8 and 1.6 wt.% (0.4, 0.8 and 1.6Si-HA) using silicon acetate [Si(OCOCH₃)₄] as a Si source. As-synthesized hydroxyapatite (HA) and Si-HA powders/bulks were heat-treated at different temperatures of 1150, 1200 and 1250 °C for 1 h. Pure 0.4Si-HA and 1.6Si-HA were obtained after heat-treatment at all temperatures, whilst α-TCP phase was formed in the 0.8Si-HA sample after heat-treatment at 1250 °C. SEM observation clearly showed that the substitution of Si in HA inhibited the grain growth of Si-HA even at high heat-treatment temperatures (1200 or 1250 °C). The highest diametral tensile strength (DTS) of 15.93 MPa was obtained in the 1.6Si-HA sample after heat-treatment at 1250 °C.     

Resolution of a Five-Component Mixture of Quaternary Ammonium Surfactants on Silica Gel 60 <Emphasis Type=Italic>F</Emphasis><Subscript>254</Subscript> High Performance Thin Layer Chromatographic Plates

The mutual separation of a mixture of cetyltrimethyl ammonium chloride (CTAC), methyl trioctyl ammonium bromide (MTOB), dodecyltrimethyl ammonium chloride (DTAC), benzyltrimethyl ammonium chloride (BTAC) and tetrabutyl ammonium bromide (TBAB), was achieved on silica high performance thin layer chromatographic plates using dimethyl sulfoxide with aqueous sodium-l-tartrate dibasic dihydrate as the solvent system. The effect of concentration of sodium-l-tartrate dibasic dihydrate on the mobility of all the five quaternaries was examined. The limit of detection of CTAC, MTOB, DTAC, BTAC and TBAB was estimated as 0.6, 0.6, 0.3, 0.6 and 0.3 μg/zone, respectively. The method developed was utilized to identify these surfactants in different spiked water samples after their preliminary separation.     

Effect of thermal treatment on the growth,structure and luminescence of nitride-passivated silicon nanoclusters

Silicon nanoclusters (Si-ncs) embedded in silicon nitride films have been studied to determine the effects that deposition and processing parameters have on their growth, luminescent properties, and electronic structure. Luminescence was observed from Si-ncs formed in silicon-rich silicon nitride films with a broad range of compositions and grown using three different types of chemical vapour deposition systems. Photoluminescence (PL) experiments revealed broad, tunable emissions with peaks ranging from the near-infrared across the full visible spectrum. The emission energy was highly dependent on the film composition and changed only slightly with annealing temperature and time, which primarily affected the emission intensity. The PL spectra from films annealed for duration of times ranging from 2 s to 2 h at 600 and 800°C indicated a fast initial formation and growth of nanoclusters in the first few seconds of annealing followed by a slow, but steady growth as annealing time was further increased. X-ray absorption near edge structure at the Si K- and L_3,2-edges exhibited composition-dependent phase separation and structural re-ordering of the Si-ncs and silicon nitride host matrix under different post-deposition annealing conditions and generally supported the trends observed in the PL spectra.