首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1373篇
  免费   2篇
综合类   1篇
化学工业   28篇
金属工艺   1篇
机械仪表   6篇
建筑科学   6篇
矿业工程   1篇
能源动力   1篇
轻工业   10篇
武器工业   1篇
无线电   19篇
一般工业技术   32篇
冶金工业   1255篇
原子能技术   5篇
自动化技术   9篇
  2020年   1篇
  2018年   1篇
  2016年   2篇
  2015年   1篇
  2014年   1篇
  2013年   12篇
  2012年   1篇
  2011年   10篇
  2009年   1篇
  2008年   4篇
  2007年   1篇
  2006年   2篇
  2005年   2篇
  2004年   6篇
  2003年   3篇
  2002年   2篇
  2001年   6篇
  2000年   7篇
  1999年   44篇
  1998年   404篇
  1997年   257篇
  1996年   157篇
  1995年   72篇
  1994年   63篇
  1993年   88篇
  1992年   10篇
  1991年   21篇
  1990年   13篇
  1989年   9篇
  1988年   14篇
  1987年   11篇
  1986年   15篇
  1985年   12篇
  1984年   2篇
  1983年   3篇
  1982年   7篇
  1981年   9篇
  1980年   9篇
  1979年   1篇
  1978年   3篇
  1977年   19篇
  1976年   54篇
  1975年   5篇
  1973年   1篇
  1972年   2篇
  1971年   2篇
  1970年   1篇
  1968年   1篇
  1967年   1篇
  1955年   1篇
排序方式: 共有1375条查询结果,搜索用时 46 毫秒
81.
82.
Forty human clinical Mycobacterium avium-M. intracellulare complex strains isolated in Greece were characterized to the species level by PCR with three sets of primers specific for one or both species. M. avium predominated in both human immunodeficiency virus-positive and -negative patients, but the frequency of M. intracellulare isolation appeared to be higher in the latter.  相似文献   
83.
84.
85.
The diffusivity of boron in silicon dioxide may be increased by the introduction of hydrogen into the annealing atmosphere. In this paper we report on the diffusion characteristics of boron ion-implanted into thermally grown SiO2. A sensitive technique was used in which the boron atoms redistributed into the substrate are characterized by electrical methods. The diffusivity of boron in thermal SiO2 was measured over the temperature range of 950-1150°C with hydrogen partial pressure from 0 to 0.2 atm. It was found that the diffusion coefficient of boron in oxide at 1150° C increases as the square root of the hydrogen partial pressure. At fixed pressure the temperature dependence of the diffusion coefficient obeys a single-activation-energy exponential rule. At 0.1 atm partial pressure of H2 the activation energy is 3.0 eV and the preexponential factor is 6 x 105 [cm2/sec.].  相似文献   
86.
87.
88.
89.
Quantitative estimates of dust exposure in a diatomaceous earth (DE) mining and milling operation have been derived based on air sampling records for the period 1948-1988. A total of 6395 records was included in the analysis. Conversion of results obtained by particle counting, expressed as millions of particles per cubic feet (mppcf) of gravimetrically from a filter cassette and expressed as mg m-3 total, were converted to mg m-3 respirable dust using a conversion factor derived from data obtained during the same periods at the plant. Conversion factors were calculated as the average difference of means on the log scale in order to provide stable and consistent conversions and as a ratio of arithmetic means so that the results could be compared with similar studies. After converting the available data to mg m-3 respirable dust, geometric mean (geometric standard deviation) concentrations were 0.37 (2.43) during the 1950s and 0.17 (2.35) during later periods. Exposures were estimated using two linear models, one estimating the changes in concentration over time, and the other providing job-specific mean exposures during the more recent period. Extrapolation of the estimates to periods prior to the availability of any data was done using a subjectively-determined scaling factor. The average estimated respirable dust concentrations for 135 jobs were 3.55 (+/-1.25), 1.37 (+/-0.48), 0.47 (+/-0.16) and 0.29 (+/-0.10) mg m-3 prior to 1949, 1949-1953, 1954-1973 and 1974-1988, respectively. Despite the limitations of the available data, the estimation procedures used are expected to provide reasonable quantitative estimates of silica-containing dust exposure for subsequent exposure-response analyses.  相似文献   
90.
Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydride flows can be used for all wafer sizes. AFM and X-ray studies reveal that all wafer sizes have comparable high-quality crystallinity and defect levels for GaN and InGaN/GaN MQW growth. Although the larger diameter wafers exhibit larger wafer bow due to lattice and thermal mismatch,with proper ...  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号