Development and Evaluation of a Robust Sandwich Immunoassay System Detecting Serum WFA-Reactive IgA1 for Diagnosis of IgA Nephropathy

Aberrant glycosylation of IgA1 is involved in the development of IgA nephropathy (IgAN). There are many reports of IgAN markers focusing on the glycoform of IgA1. None have been clinically applied as a routine test. In this study, we established an automated sandwich immunoassay system for detecting aberrant glycosylated IgA1, using Wisteria floribunda agglutinin (WFA) and anti-IgA1 monoclonal antibody. The diagnostic performance as an IgAN marker was evaluated. The usefulness of WFA for immunoassays was investigated by lectin microarray. A reliable standard for quantitative immunoassay measurements was designed by modifying a purified IgA1 substrate. A validation study using multiple serum specimens was performed using the established WFA-antibody sandwich automated immunoassay. Lectin microarray results showed that WFA specifically recognized N-glycans of agglutinated IgA1 in IgAN patients. The constructed IgA1 standard exhibited a wide dynamic range and high reactivity. In the validation study, serum WFA-reactive IgA1 (WFA+-IgA1) differed significantly between healthy control subjects and IgAN patients. The findings indicate that WFA is a suitable lectin that specifically targets abnormal agglutinated IgA1 in serum. We also describe an automated immunoassay system for detecting WFA+-IgA1, focusing on N-glycans.     

基于Ti-MgF2金属陶瓷的高效率四层光热转换薄膜的研究

理论上研究了吸收层材料的光学常数,该常数满足从紫外线到近红外波长范围的四层结构的光子-热转换的高效率。通过使用有效介质近似（EMA）模型,复合材料（金属陶瓷）的光学性能与模拟材料的光学性能非常吻合。此外,提出了使用Ti-MgF₂金属陶瓷作为吸收层的具有高光子-热转换效率的四层膜结构,其在300~1 600 nm的波长范围内具有约95.1％的高吸收率。研究结果为实现高效率的光热转换器件提供了新途径,显示了优良的应用前景。     

Uniaxial-process-induced strained-Si: extending the CMOS roadmap

This paper reviews the history of strained-silicon and the adoption of uniaxial-process-induced strain in nearly all high-performance 90-, 65-, and 45-nm logic technologies to date. A more complete data set of n- and p-channel MOSFET piezoresistance and strain-altered gate tunneling is presented along with new insight into the physical mechanisms responsible for hole mobility enhancement. Strained-Si hole mobility data are analyzed using six band k/spl middot/p calculations for stresses of technological importance: uniaxial longitudinal compressive and biaxial stress on [001] and [110] wafers. The calculations and experimental data show that low in-plane and large out-of-plane conductivity effective masses and a high density of states in the top band are all important for large hole mobility enhancement. This work suggests longitudinal compressive stress on [001] or [110] wafers and <110> channel direction offers the most favorable band structure for holes. The maximum Si inversion-layer hole mobility enhancement is estimated to be /spl sim/ 4 times higher for uniaxial stress on (100) wafer and /spl sim/ 2 times higher for biaxial stress on (100) wafer and for uniaxial stress on a [110] wafer.     

Dielectric spectroscopy of metal nanoparticle doped liquid crystal displays exhibiting frequency modulation response

Twisted nematic liquid crystal displays (TN-LCDs), doped with the nanoparticles of metal, such as Pd, Ag, or Ag-Pd, which are protected with ligand molecules, such as nematic liquid crystal, exhibit a frequency modulation (FM) electro-optical (EO) response with short response time of milliseconds (ms) or sub-ms order together with the ordinary rms voltage response. These devices are called FM/AM-TN-LCDs; they are distinct from the ordinary LCDs featured by the amplitude modulation (AM) response. The phenomena of the FM/AM LCDs may be attributed to the dielectric dispersion of a heterogeneous dielectric medium known as the Maxwell-Wagner effect. It is experimentally shown that the frequency range spreads from several tens hertz to several tens kilohertz and the spectrum is more or less centered about the dielectric relaxation frequency. We formulated a theory based on an equivalent circuit model to evaluate the dielectric relaxation frequency and the dielectric strengths; and we succeeded in explaining the dependence of the dielectric relaxation frequency on the concentration of nanoparticles and the their dielectric and electrical properties, whereas conventional theories based on electromagnetic theory are unable to explain this concentration dependence. This paper reports on the experimental results of the EO effects and the dielectric spectroscopy including the dielectric relaxation times and the dielectric strengths of nematic liquid crystal, 5CB (4-pentyl-4'-cyanobiphenyl), doped with the metal nanoparticles of I'd alone and Ag-Pd composite; and discusses how the observed dielectric relaxation frequency or dielectric relaxation time depend on the concentration of the doped nanoparticles and also their electrical and dielectric properties.     

Chemical sensing by an electrical oscillator: Detection and quantification of cationic surfactants

A new chemical sensing system using an electrical oscillator has been developed. This sensing system measures the electrical ‘non-linearity’ at the surface of an electrode immersed in a test solution: a sinusoidal voltage is applied to the electrode and the higher harmonics of the output current are obtained by Fourier transformation. This sensing system has been used to detect and quantify surfactant molecules in solutions. The relative intensity P₂/P₁ of the peaks of the second (P₂) and first (P₁) harmonics in the output current was found to be linearly correlated with the logarithms of the concentrations of cationic surfactants such as cetylpyridium bromide (CPB) and cetyl-N,N,N-trimethylammonium bromide (CTAB), but not with those of the anionic surfactant sodium dodecyl sulfate (SDS) or the neutral surfactant Triton X-100. The reproducibility of this sensing system was shown to be excellent.     

Direct-current measurements of oxide and interface traps onoxidized silicon

A direct-current current-voltage (DCIV) measurement technique of interface and oxide traps on oxidized silicon is demonstrated. It uses the gate-controlled parasitic bipolar junction transistor of a metal-oxide-silicon field-effect transistor in a p/n junction isolation well to monitor the change of the oxide and interface trap density. The dc base and collector currents are the monitors, hence, this technique is more sensitive and reliable than the traditional ac methods for determination of fundamental kinetic rates and transistor degradation mechanisms, such as charge pumping     

Efficient PDFA module using high-NA PbF/sub 2//InF/sub 3/-based fluoride fiber

The highest reported single-pass gain coefficient of 0.36 dB/mW has been achieved using a newly developed Pr/sup 3+/-doped high-NA PbF/sub 2//InF/sub 3/-based fluoride fiber, with a /spl Delta/n of 6.6%, a core diameter of 1.2 /spl mu/m and a transmission loss of 250 dB/km at 1.2 /spl mu/m. This fiber was used to construct an efficient PDFA module with a MOPA-LD. A small-signal net gain of 22.5 dB was achieved at 1.30 /spl mu/m with a pump power of 23m mW.     

Correlation investigation between contact approach speed of handheld metal rod and discharge parameters from charged human body

Characteristic measurement of contact discharge currents are made through a hand-held metal rod from charged human body. Correlation coefficients are obtained, through Statistic Package for Social Science （SPSS）, for various charge voltages, which is based on the effect test of electrode contact approach speeds on discharge current parameters of current peaks, maximum rising slope and spark lengths. Discharge parameters at charge voltage 300V are independent on approach speed. For charge voltages equal to and higher than 500V, the contact approach speed has strong positive correlation with discharge parameters of the peak current and the maximum rising slope, whereas has strong negative correlation with the spark length.     

a-SiC:H/SiO2 Laminated Polarization Splitter for the Wavelength Region Longer Than 1.3 μm Prepared by Plasma-Enhanced Chemical Vapor Deposition

A laminated polarization splitter for the wavelength region longer than 1.3 μm is fabricated for the first time. It is composed of a-SiC:H/SiO₂ alternative multilayers prepared by plasma-enhanced chemical vapor deposition. Splitting behavior is also verified experimentally. It has low absorption loss even for the wavelength region around λ = 1.3 μm because the band-gap energy of a-Sic is larger than that of a-Si. The measured splitting angle is 13.8°, which is 2.4 times larger than the 5.7° splitting angle of rutile. The absorption loss of the multilayer is reduced to 1 × 10^-3 dB/μm at λ = 1.3 μm. The magnitude of the residual stress is 9.45 × 10⁸ dyn/cm², which is about one-third of that prepared by the rf bias sputtering equipment which is used for another project of our group. The deposition rate of SiO₂, is increased to 135 nm/min, which is 27 times larger than that prepared by the sputtering equipment.     

Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime

Negative Bias Temperature Instability of pMOSFETs is investigated under various stress gate voltages and temperatures. It is shown that degradation tends to saturate and the dependence of lifetime on electric field (E_ox) is expressed as a power-law of E_ox. We propose new empirical and kinetic models. The E_ox dependence of the lifetime described by the power-law is derived from our empirical model describing the saturation of degradation. Moreover, our kinetic model explains the saturation behavior.