厌氧胶快速渗补技术在汽车发动机上的应用

将金属铜易与过氧化物发生氧化还原反应生成游离基的原理应用于厌氧胶，开发了针时金属零件表面微孔进行局部渗补的实用技术。在相关技术可靠性和工艺可行性得以论证的前提下。将局部渗补技术成功地应用于渗补发动机泄漏缸盖，减少了废品损失，取得了良好的经济效益。     

一种低压低功耗SRAM/SOI单元设计

提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.     

两种自主开发的图形外延SiGe工艺

使用清华大学微电子学研究所研发的UHV/CVD系统深入研究了图形外延SiGe工艺,分别选用单一的SiO2介质层和SiO2/P0ly-Si复合介质层,作为图形外延SiGe单晶材料的窗口屏蔽介质,开发出了不同的实用化图形外延SiGe工艺.     

A hexane solution deposition of SnS2 films from tetrabutyltin via a solvothermal route at moderate temperature

SnS₂ films have been deposited on glass and alumina plate substrates by the reactions between an organotin precursor [tetrabuyltin, (CH₂CH₂CH₂CH₃)₄Sn] and carbon disulfide in n-hexane at the temperature range 180-200 °C for 10-40 h. The reaction system was oxygen free and applied at a moderate temperature. The films so prepared were characterized by techniques of X-ray diffraction, Scanning electron microscopy, Raman and Mössbauer spectroscopies. The films deposited on glass as well as on alumina plate have an average thickness of 30 μm, but have different rose-like morphologies, which are influenced by both the anisotropic growths of crystals and the different substrate structures. Photoluminescence measurements show that the films have an emission peak at approximately 590 nm.     

Reliability of Au bump––Cu direct interconnections fabricated by means of surface activated bonding method

As a room temperature bonding method, surface activated bonding (SAB) method has been introduced to be one of the most appropriate interconnection methods for the next generation of electronic packaging. Thus it is important to study the reliability of SAB interconnection in long term life test.In this paper, interconnections of Au bump and Cu film bonded by SAB method were performed in high temperature thermal aging test. Degradation of properties such as electrical resistance, shear strength of bump and interface microstructure during aging process were studied to investigate the failure mechanism of the interconnection. Intermetallic compound Cu₃Au was found formed at the interface during thermal aging, and it causes evolvement of the properties and failure mode of the interconnection changing in shear test. Results reveal that SAB is suitable for the interconnection between Au bump and Cu film and it is reliable in thermal reliability test.     

精馏塔静态仿真：Ⅰ.静动态混合数学模型的应用

本文为了克服精馏塔静态仿真不易收敛和初值难以给定等难题，巧妙地利用隐含数值积分方法的特点，将稳态与动态数学模型耦合起来，用以求解高难度的非理想精馏塔静态仿真问题。所得静动态混俣模型大大提高了精馏塔静态仿真的鲁棒性，对于高度非理想精馏塔的仿真尤为有效。通过对某丙烯腈萃取精馏塔的静态仿真，充分证明了这种混合模型化方法的可行性。     

^125I,^131I诱发小鼠精子畸形发生率比较

本文选用 ICR 雄性小鼠,经腹腔分别注射不同剂量的~(125)I 及~(131)I,观察并比较它们对小鼠精子畸形发生率的影响及染毒后睾丸中放射性活度的变化。实验结果表明:(1)~(125)I 染毒后4—5周,0、185、370和555 kBq 各组精子畸形发生率分别为9.00‰、9.57‰、11.6‰及13.9‰;~(131)I 染毒后4—5周,上述各组精子畸形发生率分别为8.50‰、12.5‰、14.7‰和15.5‰;在相同注入量下,~(125)I 与~(131)I 诱发小鼠精子畸形发生率的差异各组均不显著(X~2检验,p>0.05)。(2)~(125)I、~(131)I 染毒后2h 至7天内,两者在睾丸中的放射性活度及变化规律相似,即在染毒后2h 达最高值,每克睾丸中~(125)I 和~(131)I 的放射性活度分别占初始注入量(370 kBq)的0.72％和0.50％,然后迅速下降,至一周时,仅分别占初始注入量的0.035％和0.011％。     

虚拟仪器在教学中的应用

主要介绍了Multisim2001中虚拟仪器库中函数发生器、示波器的使用方法及功能；并在Multisim2001环境中仿真单管放大电路、桥式整流滤波电路。由调试结果，分析了其在教学中应用的可行性。     

试析当前汉语流行语中的英语借词现象

考察当前汉语流行语中英语借词现象的成因,并分析其不同的吸收方式及各自的理据和语用价值,最后对这一现象今后的发展做出顺应时代且符合语言发展规律的预测.     

An algebraic method for processing colored images

An 8-valued commutative ring is developed to process colored images. Algebraic operators are defined to perform a number of operations such as the extraction of the primary colors and contours of different colors.