Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain     

Improved HF modem using convolutional coding

The paper describes the design of a digitally implemented modem for use over HF (2-30 MHz) radio channels. As a completely digital approach offers the prospect of a number of significant improvements, a new digital multifrequency-shift-keying (MFSK) modem has been developed that employs a novel digital processing procedure termed code-assisted bit synchronisation (CABS). Signal detection is achieved via a set of noncoherent correlators, whilst symbol synchronisation and error correction are performed using a soft-decision Viterbi decoder. Practical tests of modem show that it operates effectively under both additive white Gaussian noise and real HF channel conditions     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Influence of series resistance in oxide parameter extraction data from accelerated tests

Accelerated reliability tests on thin oxide capacitors can be affected by series resistance effects at high stress conditions. The purpose of this work is to point out such problems both with measurements and simulations. It is shown that breakdown electric field is overestimated. Due to the resulting nonuniform stress, charge to breakdown density is underestimated if the test structure layout is not accurately designed. In any case the series resistance effects can have an undesirable impact on the reliability evaluation of thin dielectrics.     

Gain equalization by mitigating self-filtering effect in a chain ofcascaded EDFA's for WDM transmissions

A simple method of alternatively using high-inversion and moderate-inversion erbium-doped fiber amplifiers (EDFA's) in an optical amplifier chain is presented to mitigate the self-filtering effect and equalize both signal power and signal-to-noise ratio (SNR) of multiple wavelength channels in wavelength-division multiplexing (WDM) transmission systems. The performance of the compensated system with alternatively used high- and moderate-inversion amplifiers is compared with the uncompensated ones where only moderate- or high-inversion amplifiers are employed. The result shows that the compensated system has a flatter gain profile, a lesser signal power spread, and SNR degradation     

Geometric and algebraic errors in calculating a transducer'sspatial impulse response

Two types of errors resulting from the numerical evaluation of a transducer's spatial impulse response function have been identified, One is geometric and is due to the mismatch between the emulated piston surface (approximated using many small planar elements) and the true surface. The other error is algebraic and is due to the inexact formulation of the response of the emulated surface. The deviations from the true response were calculated for three different pistons. The results indicate that the shape and placement of the elements are important for the computational accuracy     

Fourier-transform-limited pulses from gain-switched distributed-Bragg-reflector lasers using simultaneous modulation of gain and phase sections

Fourier-transform-limited pulses ( Delta tau . Delta nu approximately=0.35) have been obtained from a microwave-modulated DBR laser at 1.56 mu m. The chirp of the gain-switched pulse is compensated for by applying a fraction of the microwave signal to the phase section, thereby creating an instantaneous frequency shift of opposite sign. The generation of short coherent pulses from such a monolithic source can be of great interest for long haul soliton transmission.<>     

Correlation between synthesis conditions, coherently diffracting domain size and cubic phase stabilization in barium titanate

The Constant Rate Thermal Analysis method has been used under different experimental conditions to obtain barium titanate powder of very small grain size. Both a crystallographic and a dielectric study ham been carried out on samples sintered at different temperatures. It is deduced that the formation of small coherently diffracting domains is improved by the generation of oxygen vacancies and the cubic phase stabilization depends on the coherently diffracting domain size rather than on the particle size.