Structure-Activity Relationship and Crystallographic Studies on 4-Hydroxypyrimidine HIF Prolyl Hydroxylase Domain Inhibitors

The 2-oxoglutarate-dependent hypoxia inducible factor prolyl hydroxylases (PHDs) are targets for treatment of a variety of diseases including anaemia. One PHD inhibitor is approved for use for the treatment of renal anaemia and others are in late stage clinical trials. The number of reported templates for PHD inhibition is limited. We report structure–activity relationship and crystallographic studies on a promising class of 4-hydroxypyrimidine-containing PHD inhibitors.     

QoE-aware Q-learning based approach to dynamic TDD uplink-downlink reconfiguration in indoor small cell networks

Wireless Networks - The continuing rise of the amount of mobile traffic is daunting, but the deploying of indoor small cells provides exciting opportunities to boost network capacity, extend cell...     

The impacts of high tensile stress CESL and geometry design on device performance and reliability for 90 nm SOI nMOSFETs

The thickness effects of high-tensile-stress contact etch stop layer (HS CESL) and impact of layout geometry (length of diffusion and gate width) on mobility enhancement of 100/(100) 90 nm SOI nMOSFETs were studied in detail. Additionally, we also inspected the low frequency characteristic with low-frequency noise investigation for FB-SOI nMOSFETs. Experimental results show that devices with 1100 Å HS CESL possess worse characteristics and hot-carrier-induced degradations than devices with 700 Å HS CESL due to serious stress-induced defects happen. The lower plateau of Lorentzian noise spectrum observed from input-referred voltage noise (S_vg) implies higher leakage current for the devices with 1100 Å HS CESL. On the other hand, we found that devices with narrow gate widths possess higher driving capacity because of larger fringing electric fields and higher compressive stress in direction perpendicular to the channel. Owing to the more serious impact of compressive stress in direction parallel to the channel, the device performance was degraded particularly for devices with shorter LOD.     

Design and fabrication of deep submicron CMOS technology compatible suspended high-Q spiral inductors

In this paper, deep submicron complementary metal-oxide-semiconductor (CMOS) process compatible high-Q suspended spiral on-chip inductors were designed and fabricated. In the design, the electromagnetic solver, SONNET, and the finite element program, ANSYS, were used for electrical characteristics, maximum endurable impact force, and thermal conduction simulations, respectively. Based on the design, suspended spiral inductors with different air cavity structures, i.e., diamond opening, circle opening, triangle opening, and full suspended with pillar supports were developed for various applications. Among these structures, the suspended inductor with pillar support possesses the highest Q/sub max/ (maximum of quality factor) of 6.6 at 2 GHz, the least effective dielectric constant of 1.06, and the lowest endurable impact force 0.184 Newton. On the other hand, the spiral inductor with diamond opening has a lowest Q/sub max/ of 4.3, the largest effective dielectric constant of 3.44 and highest endurable impact force 4 Newton. The former is suitable for station telecommunication applications in which the mechanical vibration is not a serious concern, while the latter can be used for mobile telecommunication applications subject to strong mechanical vibrations. Additionally, the conventional on-chip spiral inductor embraced by SiO/sub 2/ with a dielectric constant of 4 was prepared for comparison and found its Q/sub max/ is 3.8 at 1.2 GHz.     

Substrate noise-coupling characterization and efficient suppression in CMOS technology

This brief investigates the substrate noise coupling using S-parameters measurement. Radio frequency domain analysis shows that the noise isolation is strongly dependent on layout geometry, including the parameters such as p-n junction, physical separation distance, guard ring (GR), and deep n-well (DNW). We found that the noise coupling can be efficiently diminished by incorporating GR and DNW structures.     

Sheldon H. White (1928-2005).

Sheldon "Shep" Harold White, one of developmental psychology's most distinguished scholars, died on March 17, 2005, at the age of 76. He is perhaps best remembered for his sharp intellect, generous spirit, good humor, and warm compassion. Shep's principal work lay in three intermeshed areas: children's learning and cognitive development, social programs and policies, and the history of developmental psychology. Shep White is sorely missed by his family and friends, and countless children have unknowingly benefited from his research, scholarship, and contributions to public policy. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

A novel process for fabricating electrical contact SnO<Subscript>2</Subscript>/Ag composites by reciprocating extrusion

Reciprocating extrusion combined with simple powder compaction was used to produce electrical contact SnO₂/Ag composites from Ag and SnO₂ powders with improved properties. The SnO₂ particles were uniformly dispersed in the Ag matrix after 20 passes of extrusion. The hardness of the composites increased with extrusion passes and leveled off after ten passes, whereas the electrical conductivity decreased slowly after five passes. The variation of the coefficient of thermal expansion with temperature revealed that SnO₂/Ag interface strength increased with extrusion passes and was greatest after 20 passes. The SnO₂/Ag composites with 20 passes showed the best electrical contact properties in which there was no mass loss through mass transfer from cathode to anode during the make-break erosion test at both low and high current conditions. On the other hand, SnO₂/Ag composites with one pass and commercial SnO₂-In₂O₃/Ag specimens had an apparent mass loss under the same condition. Electrical contact composites produced by the present method are promising in electrical contact applications in consideration of cost and performance.     

The control of protein release from poly(DL-lactide co-glycolide) microparticles by variation of the external aqueous phase surfactant in the water-in oil-in water method

A unique feature of p21 that distinguishes it from the other cyclin-dependent kinase (CDK) inhibitors is its ability to associate with the proliferating cell nuclear antigen (PCNA), an auxiliary factor for DNA polymerases delta and epsilon. While it is now well established that inhibition of cyclin/CDK complexes by p21 can result in G1 cell cycle arrest, the consequences of p21/PCNA interaction on cell cycle progression have not yet been determined. Here, we show, using a tetracycline-regulated system, that expression of wild-type p21 in p53-deficient DLD1 human colon cancer cells inhibits DNA synthesis and causes G1 and G2 cell cycle arrest. Similar effects are observed in cells expressing p21CDK-, a mutant impaired in the interaction with CDKs, but not in cells expressing p21PCNA-, a mutant deficient for the interaction with PCNA. Analysis of cells treated with a p21-derived PCNA-binding peptide provides additional evidence that the growth inhibitory effects of p21 and p21CDK result from their ability to bind to PCNA. Our results suggest that p21 might inhibit cell cycle progression by two independent mechanisms, inhibition of cyclin/CDK complexes, and inhibition of PCNA function resulting in both G1 and G2 arrest.