浅谈水闸安全检测

通过对华东沿海地区80年代以前修建的一些在役水闸工程的系统安全检测和分析,发现了水闸工程存在的安全隐患,同时也了解水闸工程尚有的潜在能力。提醒水闸管理部门,在役水闸满足目前社会发展需要的同时,还必须高度重视水闸的安全生产运行和管理。水闸安全检测就是利用先进的检测手段,为业主及时、高效、经济和高质量地解决水闸工程存在的实际问题。     

Catalytic dehydrogenation of ethylbenzene with carbon dioxide: promotional effect of antimony in supported vanadium–antimony oxide catalyst

Alumina-supported vanadium oxide, VO_x/Al₂O₃, and binary vanadium–antimony oxides, VSbO_x/Al₂O₃, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by S_BET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO₂ pulse methods. VSbO_x/Al₂O₃ exhibited enhanced catalytic activity and especially on-stream stability compared to VO_x/Al₂O₃ catalyst. Incorporation of antimony into VO_x/Al₂O₃ increased dispersion of active VO_x species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V_0.43Sb_0.57O_x/Al₂O₃ system.     

甲基丙烯酸三氟乙酰氧乙酯的聚合

对甲基丙烯酸三氟乙酰氧乙酯(TFAOEMA)的阴离子聚合及原予转移自由基聚合进行了研究。常用的阴离于引发剂如丁基锂、1，1-二苯基已基锂等很难引发TFAOEMA的阴离子聚合，而碱性较弱的引发剂如三乙基铝却容易引发，且产率较高。以氯化亚铜、五甲基二乙基三胺、溴代丙酸乙酯为引发体系的TFAOEMA的本体原子转移自由基聚合符合活性聚合特征。但在四氢呋喃为溶剂的原子转移自由基聚合中却存在活性中心失活现象。以末端含卤素的聚甲基丙烯酸甲酯为大分子引发剂，引发TFAOEMA的原子转移自由基聚合，得到了含氟双嵌段聚合物。     

A new time-domain discontinuous space-vector PWM technique in overmodulation region

A new discontinuous modulation method based on space-vector control is proposed and analyzed. The proposed technique employs a pulse-dropping method and is designed in the time domain. It features a very wide modulation range while maintaining the required waveform qualities and switching numbers in the overmodulation region. Since the modulation method and modulation index equation are simple, the proposed technique can be easily implemented by software and is applicable to the overmodulation region in ac motor drives. The performance indexes are discussed and experiments have been performed.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.     

水溶液辐射分解产物对金属材料腐蚀的影响

实验研究了水辐射分解作用对高放废物深地质处置容器材料的影响。在高放废物深地质处置库附近的地下水,受辐射线作用后分解出氧、氢和氧化产物(例如H_2O_2等),于是在高放废物容器周围形成一个氧化场,导致高放废物中的某些重要放射性核素(例如U,Np和Tc)易溶于水,并向远域迁移。本实验中的含FeSO_4(0.13 mol/L)水溶液在吸收剂量为0、20、60、180、500kGy的射线作用下,其氧化还原电位(Eh)值由+357mV增至+414 mV;在不同吸收剂量的射线作用下,金属Cu、金属Al、0.357 mv金属Fe和不锈钢(后者是我国拟采用的高放废物包装容器材料),在水溶液中的氧化侵蚀强度,分别比在无辐射情况下的大0.2-6.1倍。     

A new millimeter-wave step-frequency radar sensor for distancemeasurement

A new compact millimeter-wave distance-measurement sensor prototype has been developed. The sensor is a step-frequency radar implemented using coherent heterodyne technique. It operates in Ka-band (26.5-40 GHz) and is realized using MICs and MMICs. The sensor transmits sinusoidal signals of incremental frequencies and demodulates the received signals into base-band I/Q signals for processing. Experimental results show that the sensor is capable of measuring distance with less than 0.2 inch of absolute error and a low transmitted power of only -20±3 dBm     

Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures

Investigation of the tunneling conductivity σ _d(V) of structures made on a highly doped, narrow-gap p-type semiconductor HgCdTe reveals an abrupt increase in this quantity at voltages corresponding to the start of tunneling into the conduction band. It is shown that the observed functions σ _d(V) cannot be described in the framework of a model based on single-particle tunneling. It is proposed that the abrupt increase in σ _d(V) is attributable to tunneling into exciton states. Fiz. Tekh. Poluprovodn. 32, 1069–1072 (September 1998)