Ultraviolet photodetectors and readout based on a-IGZO semiconductor technology

In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R , a low response time t _{R E S} , and a good noise equivalent power value NEP .     

High-performance MEMS shutter display with metal-oxide thin-film transistors and optimized MEMS element

Active matrix prestressed microelectromechanical shutter displays enable outstanding optical properties as well as robust operating performance. The microelectromechanical systems (MEMS) shutter elements have been optimized for higher light outcoupling efficiency with lower operation voltage and higher pixel density. The MEMS elements have been co-fabricated with self-aligned metal-oxide thin-film transistors (TFTs). Several optimizations were required to integrate MEMS process without hampering the performance of both elements. The optimized display process requires only seven photolithographic masks with ensuring proper compatibility between MEMS shutter and metal-oxide TFT process.     

Hardware Implementation of a Fixed-Point Decoder for Low-Density Lattice Codes

Journal of Signal Processing Systems - This paper describes a field-programmable gate array (FPGA) implementation of a fixed-point low-density lattice code (LDLC) decoder where the Gaussian mixture...     

Logic and Interaction: Foreword to the Special Issue

Journal of Logic, Language and Information -     

Thermal modeling in electricity assisted incremental sheet forming

A thermal model was built to account for the effects of geometrical parameters of sheet specimen, process parameters and material parameters on the temperature increase of the sheet specimen in Electricity-Assisted Incremental Sheet Forming (EISF). In the EISF, the local area of sheet specimen contacting with a forming tool is heated by direct current, which flows through the forming tool to the sheet specimen. EISF experiments of two high strength steel sheets were carried out to validate the thermal model. The thermal model can be integrated into the control program of EISF system to achieve more accurate temperature control.     

Inducing imperfections in germanium nanowires

Nanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical,electrical,and thermophysical applications.Additionally,the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties.In this highlight article,we review our recent progress and understanding in the deliberate induction of imperfections,in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities.The role of catalysts and catalyst-nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored.Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation."Epitaxial defect transfer"process and catalyst-nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis.By inducing and manipulating twin boundaries in the metal catalysts,twin formation and density are controlled in Ge nanowires.The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally,metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires.Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth,where the impurity Sn atoms become trapped with the deposition of successive layers,thus giving an extraordinary Sn content (＞6 at.％) in Ge nanowires.A larger amount of Sn impingement (＞9 at.％) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping.     

GraftFast Surface Engineering to Improve MOF Nanoparticles Furtiveness

Controlling the outer surface of nanometric metal–organic frameworks (nanoMOFs) and further understanding the in vivo effect of the coated material are crucial for the convenient biomedical applications of MOFs. However, in most studies, the surface modification protocol is often associated with significant toxicity and/or lack of selectivity. As an alternative, how the highly selective and general grafting GraftFast method leads, through a green and simple process, to the successful attachment of multifunctional biopolymers (polyethylene glycol (PEG) and hyaluronic acid) on the external surface of nanoMOFs is reported. In particular, effectively PEGylated iron trimesate MIL‐100(Fe) nanoparticles (NPs) exhibit suitable grafting stability and superior chemical and colloidal stability in different biofluids, while conserving full porosity and allowing the adsorption of bioactive molecules (cosmetic and antitumor agents). Furthermore, the nature of the MOF–PEG interaction is deeply investigated using high‐resolution soft X‐ray spectroscopy. Finally, a cell penetration study using the radio‐labeled antitumor agent gemcitabine monophosphate (³H‐GMP)‐loaded MIL‐100(Fe)@PEG NPs shows reduced macrophage phagocytosis, confirming a significant in vitro PEG furtiveness.