Regularization techniques in realistic Laplacian computation

This paper explores regularization options for the ill-posed spline coefficient equations in the realistic Laplacian computation. We investigate the use of the Tikhonov regularization, truncated singular value decomposition, and the so-called lambda-correction with the regularization parameter chosen by the L-curve, generalized cross-validation, quasi-optimality, and the discrepancy principle criteria. The provided range of regularization techniques is much wider than in the previous works. The improvement of the realistic Laplacian is investigated by simulations on the three-shell spherical head model. The conclusion is that the best performance is provided by the combination of the Tikhonov regularization and the generalized cross-validation criterion-a combination that has never been suggested for this task before.     

Controlling a Semiconductor Optical Amplifier Using a State-Space Model

We derive nonlinear and linear state-space control models for a multichannel semiconductor optical amplifier. Verified against the governing partial differential equations through simulation, the linear model tracks modulations up to 20% qualitatively well. Linear feedback control is then employed to design two interchannel crosstalk suppressing systems, one using state feedback into the electronic drive current and the other using optical output feedback into an optical control channel; the controller designed with the linear model is seen to work well even with 100% modulations of the nonlinear system. This linear state-space model opens the way for further robust analysis, design and control of integrated active photonic circuits     

UV‐Triggered Polydopamine Secondary Modification: Fast Deposition and Removal of Metal Nanoparticles

Since the first report in 2007, polydopamine (PDA) coating has shown great potential as a general and versatile method to create functional nanocoatings on arbitrary substrates. Slow kinetics and poor controllability of the coating and secondary modification processes, however, have limited the further development of this attractive method. In this work, it is demonstrated that UV irradiation at 365 nm significantly accelerates the process of secondary modification of a PDA‐coated surface. The kinetics of both thiol and amine modifications of PDA are increased 12‐fold via UV irradiation, while the kinetics of metal ion reduction at the PDA interface is increased more than 550 times. Moreover, it is demonstrated that irradiating a PDA/metal nanoparticle composite surface with UV light at 254 nm leads to dissolution of the deposited metal nanoparticles (MNPs). Finally, grayscale metallic patterns, dynamic deposition, and removal of MNPs on PDA surface are realized with the proposed method.     

Substrate-Independent and Re-Writable Surface Patterning by Combining Polydopamine Coatings,Silanization, and Thiol-Ene Reaction

Polydopamine coating is a unique, simple, and substrate-independent surface functionalization strategy. Techniques for secondary functionalization, patterning, and re-functionalization of polydopamine modified materials are important to broaden the scope of applications of such materials in a variety of fields. Here, a facile and substrate-independent strategy for surface functionalization and patterning is presented. This approach combines the advantages of three important methods: facile and substrate-independent polydopamine coating, versatile gas phase silanization, and rapid thiol-ene photoclick reaction for patterning. They demonstrate equally efficient functionalization and patterning of diverse materials, such as glass, polytetrafluoroethylene, aluminum, polypropylene, or polyethylene. They also show the possibility of controlled chemical removal of the patterns or surface functionalization by treatment with tetrabutylammonium fluoride, which allows re-modification or re-patterning of the substrate. Thus, this universal and powerful approach for substrate independent surface modification and patterning can significantly facilitate the development of novel functional materials and devices useful for various applications.     

Mapping of zinc content in Cd1−xZnxTe by optical methods

The paper compares different methods of optical mapping of zinc concentration x in Cd_1−xZn_xTe wafers for low x values and reviews the procedures for deriving band-gap energy from optical spectra (photoluminescence, absorption and reflectance) at different temperatures (liquid helium, liquid nitrogen and room temperature). Experimental errors of these techniques are compared and the segregation coefficient of zinc is calculated.     

Semi-insulating CdTe with a minimized deep-level doping

The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit 10¹³ cm⁻³ demanded in detector industry is studied theoretically within quasi-chemical formalism. We show that proper thermal treatment, including low temperature (ca 200°C) dwell, allows fulfillment of this demand also in 7N or less purity materials. The procedure is demonstrated in Te-rich CdTe doped with a shallow donor. Its principle is based on enhanced defect selfcompensation, which affords at sufficiently low temperature extremely high compensation of shallow defects. New high-temperature transport data are used to refine on previous native defect properties for the modeling. The analysis of diffusion rates at lowered temperature approves the model for a real-time experimental verification.