Asymptotic global confidence regions for 3-D parametric shape estimation in inverse problems.

This paper derives fundamental performance bounds for statistical estimation of parametric surfaces embedded in R3. Unlike conventional pixel-based image reconstruction approaches, our problem is reconstruction of the shape of binary or homogeneous objects. The fundamental uncertainty of such estimation problems can be represented by global confidenceregions, which facilitate geometric inference and optimization ofthe imaging system. Compared to our previous work on global confidence region analysis for curves [two-dimensional (2-D) shapes], computation of the probability that the entire surface estimate lies within the confidence region is more challenging because a surface estimate is an inhomogeneous random field continuously indexed by a 2-D variable. We derive an asymptotic lower bound to this probability by relating it to the exceedence probability of a higher dimensional Gaussian random field, which can, in turn, be evaluated using the tube formula due to Sun. Simulation results demonstrate the tightness of the resulting bound and the usefulness of the three-dimensional global confidence region approach.     

Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

Silicon nanocrystals have been produced by thermal annealing of SiN_x thin film obtained by low pressure chemical vapor deposition using a mixture between disilane and ammonia. Morphological, structural, and photoluminescence properties of the thin film were investigated using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and photoluminescence spectroscopy. The results revealed a high crystallinity of film with a crystalline volume fraction exceeded 70%, and a dominance of silicon nanocrystallites having the sizes within the range 2.5–5 nm and density ~1.98.10¹²/cm². The PL peaks consist of nanocrystalline silicon and amorphous silicon. The luminescence from the silicon nanocrystals was dominant.     

A new hybrid constraint-based approach for 3G network planning

This letter proposes a novel constraint-based 3G network planning model and a novel hybrid approach for optimizing the 3G network planning problem. Computational results show that the model and the approach are more efficient than the mathematical model and the existing heuristics. Optimal solutions are always obtained for small and medium sized problems. For larger sized problems, the final results are on average within 5.77%-7.48% of the lower bounds. The proposed hybrid approach can be an efficient tool for tackling a wide range of combinatorial NP-hard problems.     

Optimal data gathering paths and energy-balance mechanisms in wireless networks

This paper studies the data gathering problem in wireless networks, where data generated at the nodes has to be collected at a single sink. We investigate the relationship between routing optimality and fair resource management. In particular, we prove that for energy-balanced data propagation, Pareto optimal routing and flow maximization are equivalent, and also prove that flow maximization is equivalent to maximizing the network lifetime. We algebraically characterize the network structures in which energy-balanced data flows are maximal. Moreover, we algebraically characterize communication links which are not used by an optimal flow. This leads to the characterization of minimal network structures supporting the maximal flows.We note that energy-balance, although implying global optimality, is a local property that can be computed efficiently and in a distributed manner. We suggest online distributed algorithms for energy-balance in different optimal network structures and numerically show their stability in particular setting. We remark that although the results obtained in this paper have a direct consequence in energy saving for wireless networks they do not limit themselves to this type of networks neither to energy as a resource. As a matter of fact, the results are much more general and can be used for any type of network and different types of resources.     

Une optimisation en temps de calcul pour la prédiction de zones de couverture radioélectriques

This article presents a method which optimises the computation time for the prediction of a radio coverage, whatever the propagation model used. The principle consists in reducing the number of application points of the propagation model in relation to a classical technique. The proposed method is based on a multi resolution analysis of measured signals carried out around 2 GHz, and on an electromagnetic analysis of the propagation environment. The performances of the method are evaluated in term of reduction in computation time and of accuracy, in comparaison with the classical technique.     

Nanostructured Bulk Silicon as an Effective Thermoelectric Material

Thermoelectric power sources have consistently demonstrated their extraordinary reliability and longevity for deep space missions and small unattended terrestrial systems. However, more efficient bulk materials and practical devices are required to improve existing technology and expand into large‐scale waste heat recovery applications. Research has long focused on complex compounds that best combine the electrical properties of degenerate semiconductors with the low thermal conductivity of glassy materials. Recently it has been found that nanostructuring is an effective method to decouple electrical and thermal transport parameters. Dramatic reductions in the lattice thermal conductivity are achieved by nanostructuring bulk silicon with limited degradation in its electron mobility, leading to an unprecedented increase by a factor of 3.5 in its performance over that of the parent single‐crystal material. This makes nanostructured bulk (nano‐bulk) Si an effective high temperature thermoelectric material that performs at about 70% the level of state‐of‐the‐art Si_0.8Ge_0.2 but without the need for expensive and rare Ge.     

Laser-produced plasma light source for extreme ultraviolet lithography

Pulsed Nd:YAG lasers have been developed to achieve high peak power and high pulse repetition rate. These systems are being used as drivers for laser-produced plasmas which efficiently convert the 1064-nm laser output to extreme ultraviolet (EUV) light at 13.5 nm for future microlithography systems. The requirements for laser-produced plasma EUV light sources and their integration in lithography tools for high-volume manufacturing are reviewed to establish the key design issues for high-power lasers and plasma targets. Xenon has been identified as a leading target material to realize the goals of intense EUV emission and clean operation. Recent progress in high-power diode-pumped Nd:YAG lasers and xenon targets for EUV generation is reviewed, showing that laser-produced plasma sources meet the needs for current EUV lithography development tools. Future directions to meet EUV source requirements for high-volume manufacturing tools are discussed.     

Epitaxy of Si:C on Si(001) via methyldichlorosilane

Methyldichlorosilane (CH₃SiHCl₂) is compared to methylsilane (CH₃SiH₃) for vapor phase epitaxy of cubic silicon - carbon (NO :) (Si:C) alloys on Si (001). Parameters of interest are growth rate, percent carbon and crystallinity. Carbon incorporation efficiency and experimental window for epitaxial growth are similar for both precursors. The two precursors differ in Si contribution to the film growth rate.