Off-line quality control for V-process castings

In the present work Taguchi's approach has been applied to the V-process castings of Al-11 per cent Si alloy to acertain the most influential control factors which will provide better and consistent surface finish to the castings regardless of the noise factors present. The control factors of the V-process that may affect the quality of the castings are the molding sand, vibration frequency, vibrating time, degree of vacuum imposed, and pouring temperature. In order to understand how these factors affect the surface roughness of the V-process castings, response surface methodology has been applied, and to obtain the optimal setting of the control factors Taguchi's method has been used. It is found that the pouring temperature has a significant effect on the surface roughness of Al-11 per cent Si alloy castings made by a V-process. Thus the pouring temperature must be kept at the lower level. All other factors are insignificant. Therefore, any setting of the insignificant factors/variables that give the minimum cost can be used.     

Temperature and pressure effects on supercritical CO2 extraction of tomato seed oil

Tomato seed oil was extracted with supercritical carbon dioxide in a semibatch-flow extractor within the temperature range 313–343 K and the pressure range 10.8–24.5MPa. The extraction rates increased with pressure, but decreased with temperature increase because of the variation in solvent density and resultant differences in oil solubility. The fatty acid composition of the extracted oil was similar to that of soybean oil.     

Surface structure of silver thin films on In2O3:Sn and Al2O 3 †

Surface structure of thin silver films (200 Å) on two technologically important films, indium tin oxide (ITO) and aluminium oxide, has been studied using scanning tunneling microscope. ITO films were prepared by reactive electron beam evaporation. Aluminium oxide films were prepared by oxidizing 2000 Å thick aluminium films evaporated on to H₂ terminated single crystal silicon substrates. The surface structure of silver on ITO and aluminium oxide appeared to be same and was characteristic of Stranski-Krastanov type. The observed asymmetry in the island shape was attributed to the anisotropic nature of the strain fields surrounding the nucleation centres.     

Differential current switch logic: a low power DCVS logic family

Differential current switch logic (DCSL), a new logic family for implementing clocked CMOS circuits, has been developed. DCSL is in principle a clocked differential cascode voltage switch logic circuit (DCVS). The circuit topology outlines a generic method for reducing internal node swings in clocked DCVS logic circuits. In comparison to other forms of clocked DCVS, DCSL achieves better performance both in terms of power and speed by restricting internal voltage swings in the NMOS tree. DCSL circuits are capable of implementing high complexity high fan-in gates without compromising gate delay. Automatic lock-out of inputs on completion of evaluation is a novel feature of the circuit. Three forms of DCSL circuits have been developed with varying benefits in speed and power. SPICE simulations of circuits designed using the 1.2 μm MOSIS SCMOS process indicate a factor of two improvement in speed and power over comparable DCVS gates for moderate tree heights     

Experience with Applying Formal Methods to Protocol Specification and System Architecture

In the last three years or so we at Enterprise Platforms Group at Intel Corporation have been applying formal methods to various problems that arose during the process of defining platform architectures for Intel's processor families. In this paper we give an overview of some of the problems we have worked on, the results we have obtained, and the lessons we have learned. The last topic is addressed mainly from the perspective of platform architects.     

Thermal stability in bulk cryomilled ultrafine-grained 5083 Al alloy

Thermal stability in bulk ultrafine-grained (UFG) 5083 Al that was processed by gas atomization followed by cryomilling, consolidation, and extrusion, and that exhibited an average grain size of 305 nm, was investigated in the temperature range of 473 to 673 K (0.55 to 0.79 T _m , where T _m is the melting temperature of the material) for different annealing times. Appreciable grain growth was observed at temperatures > 573 K, whereas there was limited grain growth at temperatures < 573 K even after long annealing times. The values of the grain growth exponent, n, deduced from the grain growth data were higher than the value of 2 predicted from elementary grain growth theories. The discrepancy was attributed to the operation of strong pinning forces on boundaries during the annealing treatment. An examination of the microstructure of the alloy suggests that the origin of the pinning forces is most likely related to the presence of dispersion particles, which are mostly introduced during cryomilling. Two-grain growth regimes were identified: the low-temperature region (<573 K) and the high-temperature region (>573 K). For temperatures lower than 573 K, the activation energy of 25 ± 5 kJ/mol was determined. It is suggested that this low activation energy represents the energy for the reordering of grain boundaries in the UFG material. For temperatures higher than 573 K, an activation energy of 124 ± 5 kJ/mol was measured. This value of activation energy, 124 ± 5 kJ/mol, lies between that for grain boundary diffusion and lattice diffusion in analogous aluminum polycrystalline systems. The results show that the strength and ductility of bulk UFG 5083 Al, as obtained from tensile tests, correlate well with substructural changes introduced in the alloy by the annealing treatment.     

On the improvement of detection characteristics of trans-stilbene crystals by improving crystal perfection

Organic molecular scintillating crystals are noted for their good timing and particle discrimination process. Trans-stilbene is one such candidate noted for its good particle detection characteristics for the past five decades. Progressive strengthening of detection characteristics of trans-stilbene has been attempted by improving crystal perfection. A series of timing resolution studies have been carried out for the Bridgman grown trans-stilbene crystals under different experimental conditions. The results were compared with the previously reported values. Pulse shape discrimination process has been carried out for ²⁴¹Am and ²⁵²Cf sources and good discrimination has been obtained for gamma-alpha and gamma-neutron sources from the grown organic phosphor crystal. Electronic Publication