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61.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
62.
Clinical manifestations and peripheral blood lymphocyte subset changes were studied in patients with myasthenia gravis (MG) to elucidate the mechanism of clinical improvement following treatment, with thymectomy (Tx) or glucocorticoid (GC) therapy. The changes found were: 1. There was a significant increase in percentages of CD3+, CD29+ CD4+ cells and CD4/CD8 ratio and a significant decrease in percentages of CD8+ and CD16,56+ cells in patients who had never been treated with any immune therapy. 2. After Tx or GC therapy, CD3+ and CD4+, CD29+ cells were decreased, but the number CD19+ and CD16, CD56 cells did not change. 3. Tx had a special effect on CD8+ cells. In most of the patients who showed clinical improvement after Tx, CD8+ cells were increased and CD4/CD8 ratio wad decreased. 4. Anti-acetylcholine receptor (AChRAb) titers were markedly decreased after GC therapy. These results indicate that there were obvious abnormalities in cell-mediated immunity in addition to those in humoral immunity in myasthenia gravis. These abnormalities tended to be normalized after Tx or GC therapy. 相似文献
63.
The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied 相似文献
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Chan K.T. Chin A. McAlister S.P. Chang C.Y. Liu J. Chien S.C. Duh D.S. Lin W.J. 《Electron Device Letters, IEEE》2003,24(1):28-30
Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology. 相似文献
67.
Shaofeng Wang Yuan Hu Zhihua Lin Zhou Gui Zhengzhou Wang Zuyao Chen Weicheng Fan 《Polymer International》2003,52(6):1045-1049
Acrylonitrile–butadiene–styrene (ABS)/montmorillonite nanocomposites have been prepared using a direct melt intercalation technique by blending ABS and organophilic clay of two different particle sizes: OMTa (5 µm) and OMTb (38 µm). Their structure and flammability properties were characterized by X‐ray diffraction, high resolution electronic microscopy (HREM), thermogravimetric analysis (TGA) and cone calorimeter experiments. The results of HREM showed that ABS/5 wt% OMTa nanocomposite was a kind of intercalated–delaminated structure, while ABS/5 wt% OMTb nanocomposite was mainly an intercalated structure. The nanocomposites showed a lower heat release rate peak and higher thermal stability than the original ABS by TGA and cone calorimeter experiments. Also, the intercalated nanocomposite was more effective than an exfoliated–intercalated nanocomposite in fire retardancy. Copyright © 2003 Society of Chemical Industry 相似文献
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T. Jing M. Sc. Ir. P. H. F. Moshuis Prof. Dr. Ir. F. H. Kreuger 《Electrical Engineering (Archiv fur Elektrotechnik)》1991,74(4):315-319
Contents Surface charge accumulation and its decay at a GIS spacer are studied at atmospheric conditions employing a two step-calibration method. The results show that the accumulation saturates within 30 minutes; the dominant mechanism of surface charge accumulation is the drift of charged particles via air, while that of the decay is surface conduction. The characteristics are similar at both polarities.
Sättigungskonzentration und Abklingverhalten der Oberflächenladung an einem mit Gleichspannung beanspruchten Abstandshalter unter atmosphärischen Bedingungen
Übersicht Die Konzentration und das Abklingen von Oberflächenladungen an einem GIS Abstandshalter wurden unter atmosphärischen Bedingungen mit Hilfe eines zweistufigen Kalibrierungsverfahrens untersucht. Die Ergebnisse zeigen eine Sättigung der Ladungskonzentration innerhalb von 30 Minuten. Als Hauptursache der Ladungskonzentration ist die Drift geladener Teilchen in Luft anzusehen, während das Abklingen auf die Oberflächenleitung zurückzuführen ist. Ähnliche Charakteristiken ergeben sich mit beiden Polaritäten.相似文献