Equivalent circuits for transient and steady state calculations in coaxial tubes

Contents Transient field and current have been calculated in coaxial tubes for a given applied voltage wave form. The boundary value problem of the diffusion equation has been solved. The solution lead to equivalent circuits i.e. circuits with lumpedL, R elements which can describe the impedance behaviour as accurately as required. This method could well be applied to find short circuit currents and steady state losses in cables, bus bars and gas insulated transmissions.

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Ersatzschaltbilder zur Berechnung von transienten und stationären Zuständen in koaxialen rohrförmigen Leitern

Übersicht Transiente Felder und Ströme werden in koaxialen Zylinderanordnungen bei eingeprägter Spannung berechnet. Das entsprechende Randwertproblem aus der Maxwellschen Theorie wird gelöst. Die Lösung führt zu einem equivalenten Ersatzschaltbild mit konzetrierten Elementen. So kann das Impedanzverhalten beliebig genau beschrieben werden. Diese Methode kann für die Berechnung von Kurzschlußströmen und stationären Verlusten in Kabeln, Sammelschienen und gasisolierten Übertragungstrecken von Bedeutung sein.

     

Effects of fade distribution on a mobile satellite down-link and up-link performance in a frequency reuse cellular configuration

In a mobile satellite system with a frequency reuse cellular configuration, significant co-channel interference can be experienced due to the antenna side-lobe level. The signal will be subjected not only to its own fading, but also to the effect of the varying degree of fading on the co-channel interferer, and this interference will behave differently in the up and in the down-link. This paper presents a quantitative evaluation of the combined effects of fades and co-channel interference on a mobile satellite link.     

Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS2 Nanosheets

Solution‐processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n‐type electrolyte‐gated transistors (EGTs) based on porous WS₂ nanosheet networks as the semiconductor are demonstrated. The WS₂ nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 °C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n‐type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 10⁴ with low hysteresis, channel width‐normalized on‐conductances of up to 0.27 µS µm^?1 and estimated electron mobilities around 0.01 cm² V^?1 s^?1. In addition, the WS₂ nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm^?3. Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application.     

Demonstration of the monolithic interconnection on CIS solar cells by picosecond laser structuring on 30 by 30 cm2 modules

In this paper, we present the selective structuring of all three patterns (P1, P2 and P3) of a monolithic interconnection of CIS (Cu(In,Ga)(S,Se)₂) thin film solar cells by picosecond laser pulses at a wavelength of 1064 nm. We show results for single pulse ablation threshold values and line scribing of molybdenum films on glass (P1), CIS on molybdenum (P2) and zinc oxide on CIS (P3). The purposes of these processes are the p‐type isolation (P1), cell interconnect (P2) and n‐type isolation (P3), which are required for complete cell architecture. The half micron thick molybdenum back electrode can be structured with a process speed of more than 15 m/s at about 15 W average power without detectable residues and damage by direct induced laser ablation from the back side (P1). The CIS layer can be structured selectively down to the molybdenum at process speeds up to 1 m/s at about 15 W average power, due to the precision of direct laser ablation in the ultrashort pulse regime (P2). The ZnO front electrode layer is separated by clean trenches with straight side walls at process speeds of up to 15 m/s at about 10 W average power, as a result of indirect induced laser ablation (P3). A validation of functionality of all processes is demonstrated on CIS solar cell modules (30 × 30 cm²). By replacing one state‐of‐the‐art process by a picosecond laser process at a time, solar efficiencies could be increased for P1 and P2 and stayed on a similar level for P3. After an optimization of the patterning processes in the R&D pilot line of AVANCIS, we achieved a new record efficiency for an all‐laser‐patterned CIS solar module: 14.7% as best value for the aperture area efficiency of a 30 × 30 cm² sized CIS module was reached. Copyright © 2014 John Wiley & Sons, Ltd.     

MIMO systems with full and reduced hardware complexity

MIMO (multiple-input-multiple-output) systems propose enormous gains in the capacity of wireless systems without requiring more spectral resources. This paper first gives an overview of the use of MIMO for diversity and spatial multiplexing, and the use of channel state information in MIMO systems. It then explores the use of antenna selection as a means for the reduction of the hardware complexity. It is shown that the performance in a spatial-multiplexing application is almost as good as that of full-complexity systems as long as the number of RF chains is at least as large as the number of data streams.     

Self‐Assembled Conjugated Thiophene‐Based Rotaxane Architectures: Structural,Computational, and Spectroscopic Insights into Molecular Aggregation

A comparative study of the self‐assembly at a variety of surfaces of a dithiophene rotaxane 1 ?β‐CD and its corresponding dumbbell, 1, by means of atomic force microscopy (AFM) imaging and scanning tunneling microscopy (STM) imaging on the micrometer and nanometer scale, respectively. The dumbbell is found to have a greater propensity to form ordered supramolecular assemblies, as a result of π–π interactions between dithiophenes belonging to adjacent molecules, which are hindered in the rotaxane. The fine molecular structure determined by STM was compared to that obtained by molecular modelling. The optical properties of both rotaxane and dumbbell in the solid state were investigated by steady‐state and time‐resolved photoluminescence (PL) experiments on spin‐cast films and diluted solutions. The comparison between the optical features of the threaded and unthreaded systems reveals an effective role of encapsulation in reducing aggregation and exciton migration for the rotaxanes with respect to the dumbbells, thus leading to higher PL quantum efficiency and preserved single‐molecule photophysics for longer times after excitation in the threaded oligomers.     

Antennas for next generation mobile communications

In future mobile communications many antennas will coexist on the device. This creates a number of problems related to bandwidth, efficiency, and correlation. Remedies are discussed in the paper, and attention is called to the promising area of adaptive matching, which also can solve problems related to the user.     

Modellierungs- und Simulationsverfahren für die optische Verbindungstechnik auf elektrischen Leiterplatten

Optical interconnection technology on the printed circuit board level is a key technology for future microelectronic equipment. The consideration of functional, technological, and economical requirements results in a hybrid solution, where electrical and optical interconnects are integrated into one substrate called electrical optical printed circuit board. The significant part of the entire design process for electrical optical printed circuit boards is marked by the design supporting modelling and simulation of optical interconnects. Based on an abstract model for an entire optical interconnect a simulation model for optical multimode-waveguides is presented, taking into account all significant waveguide properties. Apart from that, the modeling of active components (laser- and photo-diodes) is addressed.