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991.
研究了配电网中常用的降压变压器(6kV/380V)在音频激励信号频率下原端的阻抗特性,结论是:在音频激励信号范围内,变压器副边开路时,空载阻抗为容性;副边短路时,空载阻抗为感性;当频率确定时,随着变压器容量的增加,变压器空载阻抗下降;同一容量的变压器,随着频率的下降,空载容抗增加;副边接补偿电容时,空载阻抗为感性。 相似文献
992.
Song D.S. Hwang J.K. Kim C.K. Han I.Y. Jang D.H. Lee Y.H. 《Photonics Technology Letters, IEEE》2000,12(8):954-956
InGaAsP microdisk lasers are fabricated on AlxOy by wafer fusion. Room-temperature continuous-wave operation with threshold pump power of 1.13 mW has been achieved from a 2.2-μm diameter microdisk laser. The lasing wavelength with incident pump power redshifts at a rate of 0.28 nm/mW which shows the improved thermal characteristics due to the high thermal conductivity of AlxO y bottom layer 相似文献
993.
994.
深入研究了亚30nm CMOS关键工艺技术,特别是提出了一种新的低成本的提高空穴迁移率的技术--Ge预非晶化S/D延伸区诱生沟道应变技术,它使栅长90nm pMOS空穴有效迁移率在0.6MV/cm电场下提高32%.而且空穴有效迁移率的改善,随器件特征尺寸缩小而增强.利用零阶劳厄线衍射的大角度会聚束电子衍射分析表明,在沟道区相应的压应变为-3.6%.在集成技术优化的基础上,研制成功了高性能栅长22nm应变沟道CMOS器件及栅长27nm CMOS 32分频器电路(其中分别嵌入了57级/201级环形振荡器),EOT为1.2nm,具有Ni自对准硅化物. 相似文献
995.
In computing 3D motion and structure from image correspondences, often called the structure from motion (SFM) problem, dimensions of the used variable set are very large because it contains both motion and structure parameters. As a result, to solve the problem incurs much computational burden. However, in on-line applications of the SFM problem, computational efficiency needs to be stressed as some accuracy of the solutions is sacrificed. In this respect, various dimensional reduction methods are often introduced to improve computational efficiency and this usually leads to various reduced-form SFM problems. The so-obtained reduced-form SFM problems depend on fewer unknowns than the original SFM problem, thus allowing, in principle, for a less computationally intensive estimation, albeit potentially sacrificing accuracy of the results. It is thus interesting to study how much accuracy is lost. This is done by analytically proving results on equivalence or proximity of solutions for some example cases of the so-obtained reduced-form SFM problems. And then, based on the analysis, the author also proposes how to reduce the loss of accuracy in the reduced-form SFM problems (in the meaning of adjusting those reduced-form SFM problems to better approximate the original optimal SFM problem; that is, an optimal SFM problem that does not use any dimensional reduction methods). Experimental results are given to show the effect in practice. Finally, as an example application, a safety checking system using vision is considered. 相似文献
996.
997.
对InN薄膜在氨气氛下的高温退火行为进行了研究.利用XRD,SEM和XPS对样品进行了分析.结果表明,InN薄膜的结晶质量和表面形貌并不随退火温度单调变化.由于高温退火时N原子的挥发,剩下的In原子在样品表面聚集形成In颗粒.当退火温度高于425℃时,In原子的脱吸附作用增加,从而导致样品表面的In颗粒在退火温度高于425℃时逐渐减少.XRD和SEM结果表明In颗粒密度最高的样品具有最差的结晶质量.这种现象可能是由于In颗粒隔离了其下面的InN与退火气氛的接触,同时,金属In和InN结构上的差异也可能在InN中导致了高密度的结构缺陷,从而降低了InN薄膜的结晶质量. 相似文献
998.
Rong Yang He Qian Junfeng Li Qiuxia Xu Chaohe Hai Zhengsheng Han 《Electron Devices, IEEE Transactions on》2006,53(6):1310-1316
This paper presents a silicon-on-insulator (SOI) integration technology, including structures and processes of OFF-gate power nMOSFETs, conventional lightly doped drain (LDD) nMOSFETs, and spiral inductors for radio frequency integrated circuit (RFIC) applications. In order to improve the performance of these integrated devices, body contact under the source (to suppress floating-body effects) and salicide (to reduce series resistance) techniques were developed for transistors; additionally, locally thickened oxide (to suppress substrate coupling) and ultra-thick aluminum up to 6 /spl mu/m (to reduce spiral resistance) were also implemented for spiral inductors on high-resistivity SOI substrate. All these approaches are fully compatible with the conventional CMOS processes, demonstrating devices with excellent performance in this paper: 0.25-/spl mu/m gate-length offset-gate power nMOSFET with breakdown voltage (BV/sub DS/) /spl sim/ 22.0 V, cutoff frequency (f/sub T/)/spl sim/15.2 GHz, and maximal oscillation frequency (f/sub max/)/spl sim/8.7 GHz; 0.25-/spl mu/m gate-length LDD nMOSFET with saturation current (I/sub DS/)/spl sim/390 /spl mu/A//spl mu/m, saturation transconductance (g/sub m/)/spl sim/197 /spl mu/S//spl mu/m, cutoff frequency /spl sim/ 25.6 GHz, and maximal oscillation frequency /spl sim/ 31.4 GHz; 2/5/9/10-nH inductors with maximal quality factors (Q/sub max/) 16.3/13.1/8.95/8.59 and self-resonance frequencies (f/sub sr/) 17.2/17.7/6.5/5.8 GHz, respectively. These devices are potentially feasible for RFIC applications. 相似文献
999.
Tsang-Yi Wang Han Y.S. Biao Chen Varshney P.K. 《Wireless Communications, IEEE Transactions on》2006,5(7):1695-1705
In this paper, we consider the distributed classification problem in wireless sensor networks. Local decisions made by local sensors, possibly in the presence of faults, are transmitted to a fusion center through fading channels. Classification performance could be degraded due to the errors caused by both sensor faults and fading channels. Integrating channel decoding into the distributed fault-tolerant classification fusion algorithm, we obtain a new fusion rule that combines both soft-decision decoding and local decision rules without introducing any redundancy. The soft decoding scheme is utilized to combat channel fading, while the distributed classification fusion structure using error correcting codes provides good sensor fault-tolerance capability. Asymptotic performance of the proposed approach is also investigated. Performance evaluation of the proposed approach with both sensor faults and fading channel impairments is carried out. These results show that the proposed approach outperforms the system employing the MAP fusion rule designed without regard to sensor faults and the multiclass equal gain combining fusion rule 相似文献
1000.