首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   508881篇
  免费   6792篇
  国内免费   1629篇
电工技术   9450篇
综合类   739篇
化学工业   75930篇
金属工艺   16869篇
机械仪表   14490篇
建筑科学   13444篇
矿业工程   1316篇
能源动力   14437篇
轻工业   52359篇
水利工程   4183篇
石油天然气   5306篇
武器工业   13篇
无线电   65211篇
一般工业技术   94162篇
冶金工业   95450篇
原子能技术   7845篇
自动化技术   46098篇
  2021年   3683篇
  2020年   2763篇
  2019年   3450篇
  2018年   5614篇
  2017年   5493篇
  2016年   5899篇
  2015年   4310篇
  2014年   7357篇
  2013年   23979篇
  2012年   12672篇
  2011年   17890篇
  2010年   13919篇
  2009年   15896篇
  2008年   16732篇
  2007年   16732篇
  2006年   15095篇
  2005年   13811篇
  2004年   13449篇
  2003年   13133篇
  2002年   12541篇
  2001年   13014篇
  2000年   12109篇
  1999年   13004篇
  1998年   31022篇
  1997年   21985篇
  1996年   16955篇
  1995年   13077篇
  1994年   11645篇
  1993年   11342篇
  1992年   8302篇
  1991年   7913篇
  1990年   7617篇
  1989年   7365篇
  1988年   7129篇
  1987年   5905篇
  1986年   5918篇
  1985年   7108篇
  1984年   6406篇
  1983年   5955篇
  1982年   5409篇
  1981年   5589篇
  1980年   5168篇
  1979年   4966篇
  1978年   4616篇
  1977年   5508篇
  1976年   7035篇
  1975年   3961篇
  1974年   3748篇
  1973年   3814篇
  1972年   3044篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
102.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
103.
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.  相似文献   
104.
Since code division multiple access systems in multipath environments suffer from multiple access interference (MAI), multiuser detection schemes should be used in the receivers. Parallel interference cancellation (PIC) is a promising method to combat MAI due to its relatively low computational complexity and good performance. It is shown that the complexity of PIC is still high for realistic scenarios in terms of the symbol rate, the number of users, spreading gain, and multipath components. However, two novel methods are introduced to reduce significantly the complexity without sacrificing performance. The first approach, called reduced PIC, takes advantage of the composition of the interference to concentrate interference cancellation only on significant terms. The second approach, called differential PIC, exploits the multistage character of PIC to avoid unnecessary double calculations of certain terms in consecutive stages. It is shown that a combination of both approaches leads to a performance very close to the single-user bound whereas the complexity can be kept on the order of the conventional RAKE receiver  相似文献   
105.
'Software defined radio' (SDR) is a technology that will appear in future generations of mobile phones, i.e. following the third-generation mobile phone technology that is currently being defined and developed. Early versions of 'pragmatic' SDR will allow the terminal to be reconfigured at any level of its protocol stack. Ultimately, the 'pure' SDR technology will allow a mobile phone or terminal to have its air interface software configured or reconfigured by other software (or software parameters) that have been downloaded to the terminal, e.g. over the air, or from a remote server via the Internet and one's personal computer (PC). A number of security issues arise with downloaded code that implements the air interface functions, and these may not be obvious simply from looking at the way PC software is updated on-line today. This paper starts with an outline of the code that allows a mobile phone to operate over a particular air interface. This sets the baseline for a discussion of the security issues surrounding the change of this code from one that is fixed and downloaded once only, to code that is reconfigurable during the life of a product.  相似文献   
106.
107.
108.
This paper describes a sequential tripping strategy used in a wide area back-up protection expert system (BPES) to combat situations in which protection relays have maloperated or information is missing. The BPES is an innovative back-up protection scheme designed to prevent the occurrence of widespread blackouts. The BPES evaluates the certainty that transmission lines are likely to be affected by the fault and uses a sequential tripping strategy to isolate the fault if a firm decision is not available due to maloperated relays and/or missing information. The mode of analysis and the sequential tripping strategy ensures that the BPES will clear a fault at minimum risk to the network. An example is included to demonstrate how the certainty factor based sequential tripping strategy is employed by the BPES to clear a fault which occurred on the South Western part of the UK National Grid System  相似文献   
109.
Eliminating the adoption barrier   总被引:1,自引:0,他引:1  
Krueger  C. 《Software, IEEE》2002,19(4):29-31
  相似文献   
110.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号