Design and evaluation of an optically triggered monolithic sampleand hold circuit using GaAs MESFET technology

The design and evaluation of an optically triggered, fully integrated sample and hold circuit (OS/H) is described. Measured results are presented that demonstrate operation of this circuit at 250 Ms/s and with effective resolution approaching 8 bits. The integrated circuit, which measures 2.1 mm×1.4 mm, is realized in -1.0-V threshold, 20-GHz ft GaAs MESFET technology, consumes approximately 200 mW of power, and requires one optical address. The OS/H will find applications in high precision, hybrid, and integrated signal processing systems where high speed, high levels of parallelism, and low timing jitter are important. Measured results of a series photoconducting (Auston switch) OS/H realized in the same technology are presented for comparison purposes     

Mine operating accurate stability control with optical fibersensing and Bragg grating technology: the European BRITE/EURAM STABILOSproject

Recent developments of stability control in mines, essentially based on Ge-doped fiber Bragg gratings (FBG) are reported including results about the different aspects of the system: accurate characterizations of FBG, sensor network topology and multiplexing method, user interface design and sensor packaging     

Stability analysis of nonlinear TE polarized waves inmultiple-quantum-well waveguides

A stability analysis of TE polarized nonlinear guided waves in multiple-quantum-well waveguides is presented. In particular, a scalar finite element approach has been used in order to numerically investigate symmetrical as well as asymmetrical field distributions and their properties. For high input power, the analysis reveals the stable and the unstable nature of asymmetrical and symmetrical multiple quantum well waveguide solutions. Similar features to single linear film bounded by nonlinear media are pointed out. The limits of the homogeneous slab approximation are discussed     

Demonstration and genotyping of pestivirus RNA from mammalian cell lines

Mineralization occurred both in fetal rat calvarial cells and UMR 106 osteoblastic cells when they were cultured in medium containing L-ascorbate and beta-glycerophosphate as evidenced by von Kóssa staining as well as deposition of calcium ions and inorganic phosphate in the cells. When compared with corresponding non-mineralized cell cultures, both the mineralized cultures of calvarial cells and UMR 106 cells did not exhibit any change in intracellular bone-specific alkaline phosphatase activities which were measured by wheatgerm lectin precipitation method. Our results support the hypothesis that mineralization may not exert any direct negative feedback on matrix protein synthesis in osteoblasts during bone formation.     

Feedback-based flow control of B-ISDN/ATM networks

We consider a system comprising of a single bottleneck switch/node that is fed by N independent Markov-modulated fluid sources. There is a fixed propagation delay incurred by the traffic between these sources and the switch. We assume that the switch sends periodic feedback in the form of a single congestion indicator bit. This feedback also incurs a fixed propagation delay in reaching the sources. Upon reaching the sources (or the access controllers associated with the sources), this congestion indicator bit is used to choose between two rates for the excess traffic, high or low, possibly depending on the state of that source. The switch employs a threshold mechanism based on its buffer level to discard excess traffic. We show that the stationary distribution of this system satisfies a set of first-order linear differential equations along with a set of split boundary conditions. We obtain an explicit solution to these using spectral decomposition. To this end we investigate the related eigenvalue problem. Based on these results we investigate the role of delayed feedback vis-a-vis various time-constants and traffic parameters associated with the system. In particular, we identify conditions under which the feedback scheme offers significant improvement over the open-loop scheme     

Transient simulation of heterojunction photodiodes-part II:analysis of resonant cavity enhanced photodetectors

The high-speed response properties of resonant cavity enhanced (RCE) photodetectors have been investigated. The limitations on the high-speed performance of photodiodes and the advantages of RCE-detection are discussed. Transient response of heterojunction photodiodes under pulsed optical illumination has been simulated using the method described in Part I. Results on conventional AlGaAs/GaAs and RCE GaAs/InGaAs heterojunction p-i-n photodiodes are presented. For small area detectors, almost 50% bandwidth improvement along with a two-fold increase in efficiency is predicted for RCE devices over optimized conventional photodiodes. A nearly three-fold enhancement in the bandwidth-efficiency product was shown     

Continuously chirped DFB gratings by specially bent waveguides fortunable lasers

We have implemented and studied a new type of tunable multiple-section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. Arbitrarily and continuously chirped DFB gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision. The mathematical bending functions are optimized in this case to provide enlarged wavelength tuning ranges. We present the results of model calculations, the technological device realization and experimental results of the DFB laser characterization e.g. a tuning range of 5.5 nm without wavelength gaps and high side mode suppression ratio     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process