The safer choices project: methodological issues in school-based health promotion intervention research

Randomized trials of school-based health promotion programs present unique design and analytical issues not widely discussed in the research literature. This article describes the Safer Choices study--a school-based program for prevention of HIV, other sexually transmitted diseases, and pregnancy--to illustrate critical methodological issues involved in large-scale, school-based intervention trials, particularly those evaluating interventions with a school-wide focus. The issues presented are: 1) comparability of the intervention and control groups even when few units are randomized; 2) factors that affect the decision to use a cohort or cross-sectional design; and 3) appropriate analysis strategy when the unit of randomization and intervention is at the school level, but observations are at the student level.     

Invasiveness of LiTaO/sub 3/ and GaAs probes in external E-O sampling

Disturbances of signals on a coplanar waveguide (CPW) induced by the presence of LiTaO/sub 3/ and GaAs electrooptic probes in external electrooptic (EO) sampling have been simulated and compared quantitatively. The finite-difference-time-domain method is used to simulate the full wave field around a coplanar waveguide on a GaAs substrate in an external EO sampling configuration. The results indicate that the induced signal disturbance, or invasiveness, of a LiTaO/sub 3/ probe is almost ten times that of a GaAs probe in terms of the magnitude of S/sub 11/, but that LiTaO/sub 3/ yields about two times the EO response for a given S/sub 11/ and optical probing wavelength. The transparency of LiTaO/sub 3/ to shorter wavelengths, however, allows an even higher sensitivity for this material relative to GaAs. The results suggest that these probes do not exhibit significant invasiveness (magnitude of S/sub 11/ smaller than -40 dB), if they are removed from contact by the distance of CPWs center conductor width.<>     

GaInP/GaAs HBTs for high-speed integrated circuit applications

The use of GaInP/GaAs heterojunction bipolar transistors (HBTs) for integrated circuit applications is demonstrated. The discrete devices fabricated showed excellent DC characteristics with low V_ce offset voltage and very low temperature sensitivity of the current gain. For a non-self-aligned device with a 3-μm×1.4-μm emitter area, f_T was extrapolated to 45 GHz and f_max was extrapolated to 70 GHz. The measured 1/f noise level was 20 dB better than that of AlGaAs HBTs and comparable to that of low-noise silicon bipolar junction transistors, and the noise bump (Lorentzian component) was not observed. The fabricated gain block circuits showed 8.5 dB gain with a 3-dB bandwidth of 12 GHz, and static frequency dividers (divide by 4) were operable up to 8 GHz     

On formalism and stability of switched systems

In this paper,we formulate a uniform mathematical framework for studying switched systems with piecewise linear partitioned state space and state dependent switching.Based on known results from the the...     

Multiregional estimation of gross internal migration flows

"A multiregional model of gross internal migration flows is presented in this article. The interdependence of economic factors across all regions is recognized by imposing a non-stochastic adding-up constraint that requires total inmigration to equal total outmigration in each time period. An iterated system estimation technique is used to obtain asymptotically consistent and efficient parameter estimates. The model is estimated for gross migration flows among the Canadian provinces over the period 1962-86 and then is used to examine the likelihood of a wash-out effect in net migration models. The results indicate that previous approaches that use net migration equations may not always be empirically justified."     

High-Speed Semiconductor Voltage Regulators for On-Load Distribution Network Transformers

Power Technology and Engineering - The paper presents the results of developing a high-speed semiconductor transformer voltage regulator (STVR) intended for a real-time voltage regulation of 0.4 kV...