Nanoweb Formation: 2D Self‐Assembly of Semiconductor Gallium Oxide Nanowires/Nanotubes

This paper reports a method to produce networks of crystalline gallium oxide comprised of one‐dimensional (1D) nanostructures. Because of the unique arrangement of wires, these crystalline networks are termed as ‘nanowebs’. Nanowebs are of great technological interest since they contain wire densities of the order of 10⁹ cm^–2. A possible mechanism for the fast self‐assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation–reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enabled them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β‐gallium oxide. Individual wire properties contribute to a nanoweb’s overall capacity and the implications for devices based on nanowebs are expected to be enormous.     

Anhydrous esterification of myristic acid with propylene: Ion exchange resin and acid-treated clay as catalysts

Anhydrous esterification of myristic acid with propylene was carried out in the temperature range of 110–145°C and pressure from 190–195 psig in the presence of Amberlyst-15 (cation exchange resin) and Filtrol-24 (acid-treated clay) as catalysts. The product ester, isopropyl myristate finds use in cosmetic and topical medicinal preparations where good absorption through the skin is desired. Filtrol-24 is the catalyst of choice, and the recommended operating temperature is 130°C with a pressure of 190 psig.     

Optoelectronic charge coupled device (OECCD) using InP MIScapacitor array

An optoelectronic charge coupled device (OECCD) which is directly compatible with an incident optical signal is proposed. The nonlinear partial differential equation consisting of optical generation and recombination is solved in one dimension using the Crank-Nicolson finite-difference scheme. The charge transfer inefficiency is the main parameter considered for the calculation     

The role of N,N-dimethylaniline in the formation of titania gel monolith by sol-gel method

19950405 Our investigation on the rheological aspects such as gelling time, specific density, fluidity, viscosity and surface tension of the sol derived from titanium-tetra-isopropoxide (TTIP), water and isopropanol (i-PrOH) has been reviewed in the presence of n,n-dimethylaniline (DMA) as a drying control chemical agent (DCCA). Dry gels derived from DMA stabilized sol were found to be crack free with a larger surface area. The titania gel monolith obtained in the presence of DMA could be processed into rutile at much lower temperatures.     

Acoustic emission technique for leak detection in an end shield of a pressurised heavy water reactor

This paper discusses the successful application of the Acoustic Emission Technique (AET) for detection and location of leak paths present on the inaccessible side of an end shield of a Pressurised Heavy Water Reactor (PHWR). The methodology was based on the fact that air and water leak AE signals have different characteristic features. Baseline data was generated from a sound end-shield of a PHWR for characterizing the background noise. A mock up end-shield system with saw cut leak paths was used to verify the validity of the methodology. It was found that air leak signals under pressurisation (as low as 3 psi) could be detected by frequency domain analysis. Signals due to air leaks from various locations of a defective end-shield were acquired and analysed. It was possible to detect and locate leak paths. Presence of detected leak paths were further confirmed by alternate test.     

Growth,characterization and electrical anisotropy in GaTe—a natural semiconducting superlattice

GaTe is a III–VI semiconductor which has layered structure with large anisotropy in electrical properties. Growth of single crystals by the Bridgman technique permitted the measurement of thermoelectric power in orthogonal directions from which the anisotropy of hole effective masses were determined for the first time. From resistivity and Hall effect measurements the carrier activation energies and scattering mechanisms between 10–300°K were found. Study of the temperature dependence of conductivity revealed a variety of conduction mechanisms including weak localization below 20°K, hopping conduction between 20–50 K and band conduction in and across the layer planes atT>70 K. Weak localization was confirmed through observation of negative magnetoresistance. TheI–V characteristics showed quantized behaviour due to tunneling across potential barriers, which may be due to stacking faults between layer planes as observed by TEM studies.     

Human erythrocytes bearing electroinserted CD4 neutralize infection in vitro by primary isolates of human immunodeficiency virus type 1

Human erythrocytes bearing electroinserted full-length CD4 (RBC-CD4) can bind and fuse with a laboratory strain of human immunodeficiency virus type 1 (HIV-1) or with T cells infected by HIV-1. Here we show that RBC-CD4 neutralize primary HIV-1 strains in an assay of cocultivation of peripheral blood mononuclear cells (PBMC) from HIV-1-infected persons with uninfected PBMC. RBC-CD4 inhibited viral p24 core antigen accumulation in these cocultures up to 10,000-fold compared with RBC alone. Viral p24 accumulation was inhibited equally well when measured in culture supernatants or in call extracts. The inhibition was dose-dependent and long-lived. Two types of recombinant CD4 tested in parallel were largely ineffective. The neutralization of primary HIV-1 by RBC-CD4 in vitro was demonstrated in PBMC cultures from 21 of a total of 23 patients tested at two independent sites. RBC-CD4 may offer a route to blocking HIV-1 infection in vivo.     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.