Some spectral response characteristics of ZnTe thin films

Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of 10^-6 torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. The paper was presented at the 6th Asian Thermophysical Properties Conference (6th ATPC), held at Gauhati University, during 8–11 October 2001.     

Synthesis of B-Sb by rapid thermal annealing of B/Sb multilayer films

Group III-V compound B-Sb films were synthesized from B/Sb/…/B multilayer films deposited by electron gun evaporation onto silicon substrate and subjecting the above multilayer to rapid thermal annealing at 773 K for 3 min. The films were characterized by XRD, TEM, XPS and optical studies. XPS studies indicated the ratio of B: Sb ∼ 1. XRD and electron diffraction patterns indicated the reflections from (100), (111), (102) and (112) planes of zinc blende BSb. Band gap evaluated from optical studies was ∼ 0·51 eV. Refractive index of the films varied between 1·65 and 2·18 with increasing energy of incident photon and plasma frequency (ω_p) was estimated to be ∼2·378×10⁻¹⁴ s⁻¹. The effective mass was computed to be ∼ 0·0845 m_e.     

Assessment of organizational reliability capability

A reliability capability assessment process can assist OEMs and system integrators in assessing prospective suppliers for their ability to design and manufacture reliable products before they are delivered for use, and on an ongoing basis, help a company in identifying shortcomings in its reliability program, which can be rectified by subsequent improvement actions. The assessment can also help to establish reliability management practices for use by designers, suppliers, customers, and independent authorities. The assessment method may be used to evaluate the reliability capability of all types of electronics-related industries that perform activities influencing the reliability of a product. It can produce increased customer satisfaction, provide competitive opportunities, and shorten the product development cycle. In summary, a reliability capability assessment can be used for: 1) specifying or planning reliability practices if product development is implemented internally; 2) evaluating reliability practices to determine the extent to which a supplier is capable of providing a product that meets the reliability requirements/needs; and 3) improving reliability practices if the current reliability practices have been evaluated and improvement is desired or required.     

Highly coherent electronically tunable waveguide extended cavity diode laser

A frequency agile extended cavity diode laser using an integrated Bragg reflector in a Ti : Fe : LiNbO/sub 3/ waveguide is developed and characterized. The laser emits up to 7 mW in the 1.5-/spl mu/m telecommunication window. The emission spectrum exhibits a 18-kHz linewidth, >40-dB sidemode suppression ratio, and a wavelength stability of /spl plusmn/1 pm over hours. Very fast mode hop-free frequency tuning is achieved through the electrooptic effect, with a tuning slope of 55.5 MHz/V.     

Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design

AlGaN/GaN high electron mobility transistors (HEMT) on sapphire substrates have been studied for their potential application in RF power applications; however, the low thermal conductivity of the sapphire substrate is a major drawback. Aiming at RF system-in-a-package, the authors propose a flip-chip-integration approach, where the generated heat is dissipated to an AlN carrier substrate. Different flip-chip-bump designs are compared, using thermal simulations, electrical measurements, micro-Raman spectroscopy, and infrared thermography. The authors show that a novel bump design, where bumps are placed directly onto both source and drain ohmic contacts, improves the thermal performance of the HEMT     

Information-intensive wireless sensor networks: potential and challenges

Conventional wireless sensor networks rely mostly on simple scalar data (such as temperature or humidity) and specialize in single-purpose applications. Taking a fundamental departure, in this article we motivate information-rich wireless video sensor networks that emulate the compound eyes found in certain arthropods. Although constrained by scarce resources, sensor nodes can only serve extremely low-resolution video streams; the availability of vast amount of such streams due to deployment redundance can suffice for the need of information hungry applications. Unfortunately, the unique characteristics of wireless video sensor networks will introduce novel uncertainty-driven challenges in the information-intensive and yet resource-constrained environment. Correspondingly, we describe key research problems in the areas of networking, security, sensor design, and video-data analysis     

Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface

The fabrication of silicon based micromechanical sensors often requires bulk silicon etching after aluminum metallization. All wet silicon etchants including ordinary undoped tetramethyl ammonium hydroxide (TMAH)-water solution attack the overlaying aluminum metal interconnect during the anisotropic etching of (100) silicon. This paper presents a TMAH-water based etching recipe to achieve high silicon etch rate, a smooth etched surface and almost total protection of the exposed aluminum metallization. The etch rate measurements of (100) silicon, silicon dioxide and aluminum along with the morphology studies of etched surfaces are performed on both n-type and p-type silicon wafers at different concentrations (2, 5, 10 and 15%) for undoped TMAH treated at various temperatures as well as for TMAH solution doped separately and simultaneously with silicic acid and ammonium peroxodisulphate (AP). It is established through a detailed study that 5% TMAH-water solution dual doped with 38 gm/l silicic acid and 7 gm/l AP yields a reasonably high (100) silicon etch rate of 70 μm/h at 80 °C, very small etch rates of SiO₂ and pure aluminum (around 80 Å/h and 50 Å/h, respectively), and a smooth surface (±7 nm) at a bath temperature of 80 °C. The etchant has been successfully used for fabricating several MEMS structures like piezoresistive accelerometer, vaporizing liquid micro-thruster and flow sensor. In all cases, the bulk micromachining is carried out after the formation of aluminum interconnects which is found to remain unaffected during the prolonged etching process at 80 °C. The TMAH based etchant may be attractive in industry due to its compatibility with standard CMOS process.     

Erosion-corrosion behavior of SiC particle-reinforced Al-Si alloy in NaOH slurry

The erosion-corrsosion behavior of SiC particle-reinforced Al-Si alloy has been studied in NaOH slurry simulating the mining atmosphere. The study was performed at two different sand concentrations, namely, 20 and 30 wt pct, and at a speed of 900 rpm. It is depicted that the wear rates decreased with increasing sand content, indicating that corrosion is the dominating mode of material removal. Further composite exhibited lower wear resistance than the laloys irrespective of the sand concentration. Scanning electron microscope (SEM) observations indicated the dissolution of dendrites of Al due to severe corrosion, leaving behind the network of Si. This ultimately results in the falling of Si particles from the matrix, leaving behind voids. This also results in the formation of voids around the SiC particles and leads to pullout of SiC particles from the matrix during the wear process.     

Effect of thiourea during nickel electrodeposition from acidic sulfate solutions

The effect of thiourea on the cathodic current efficiency (CE), deposit quality, crystallographic orientations, surface morphology, and polarization behavior of the cathode was investigated during nickel electrodeposition from acidic sulfate solutions for 2 hours at 60 °C. A slight decrease of 3 to 4 pct in the CE was observed, when the concentration of thiourea was increased from 2 to 40 mg dm⁻³. The nickel deposit quality deteriorated significantly at higher thiourea concentrations; the surface morphology deteriorated and the contamination of the nickel deposits increased. The presence of thiourea affected the peak intensities of the crystal planes. Cyclic voltammetric studies on nickel deposition at 25 °C revealed depolarization behavior of the cathode at lower thiourea concentrations, ≤10 mg dm⁻³; however, a mixed behavior is observed at higher thiourea concentrations. These changes were also observed in the exchange current density (i ₀) values.     

Performance of Pile-Supported Bridge Approach Slabs

A large number of pile-supported bridge approach slabs in southeastern Louisiana were examined to identify the factors that affect their long-term performance. Design drawings and subsoil conditions at these sites as well as their traffic and maintenance records were compiled, and seven representative test sites were selected for thorough field investigation that included inspection of the approach slabs, bridge decks, bridge abutments, and roadway pavement. Field evaluation included walking profiler, falling-weight deflectometer (FWD), laser profiler, geodetic survey, soil borings, cone penetrometer, and nondestructive testing. Measurements made with the walking profiler agreed well with the geodetic survey. The FWD and nondestructive testing were effectively used to detect voids under the approach slab. Results of the study indicated that the current empirical methodology used by the Louisiana Department of Transportation and Development for design of pile-supported approach slabs yields inconsistent field performance. It was concluded that this inconsistent performance is primarily due to the differences in roadway embankment design and construction and in subsoil conditions, which in turn affect the negative skin friction (downdrag) loads imparted on the piles. Impact of other variables such as ramp type, speed limit, traffic volume, and so on was found to be insignificant. Results of the field study were used to develop a new rating system for approach slabs (IRIS) based on International Roughness Index (IRI) measurements obtained with the laser profiler.