Epiallele quantification using molecular inversion probes

The location and level of DNA methylation within a genome is emerging as an important biomarker for cancer diagnosis. Despite its potential, it is difficult to comprehensively analyze the epialleles that are often found in a biological sample. Therefore, an assay utilizing molecular inversion probes was designed and used to expose and quantify epialleles in heterogeneously methylated bisulphite treated genomic DNA. Different CpG dinucleotides were able to be rapidly quantified with high resolution, sensitivity and specificity over a large dynamic range using rapid flow cytometric readout of multiplexable microbead DNA biosensors.     

GaN nanowires grown on silicon substrates engraved using stainless-steel micro-tip

GaN nanostructures have been synthesized on silicon substrates using chemical vapor deposition. Prior to growth silicon substrates were engraved using stainless-steel micro-tips. Straight as well as twisted nanowires were observed along the engraved lines/regions. Straight nanowires were few tens of microns in length and the twisted ones were few microns in length with diameter variation between 30 nm and 100 nm. The electron microscopy analysis indicates that the nanowires were grown parallel to the c-axis and possible growth mechanism is described. Raman scattering indicates good quality of nanowires exhibiting intense E₂(high) mode and A₁(LO) mode and a huge red-shift in the mode position indicates nano-size effects. Such engraved substrates without any explicit catalyst can provide site controlled growth of nanowires and this methodology is extendable for growing nanowires of related materials.     

Gauge length effect on the tensile properties of leather

Tensile properties are important basic characteristics of materials and influence their end‐use and performance. More importantly, in the case of leather due to end‐use applications such as shoe uppers, automotive and furniture upholstery, mechanical properties such as tenacity are of extreme importance. Therefore, fundamental studies on the tensile properties of leather are needed. In this study, an attempt has been made to examine the effect of gauge length (GL) on the tensile properties of shoe upper leather. Two different specimens in the form of rectangular and dumbbell shapes have been cut from parallel and perpendicular directions to the body axis of the leather and have been tested. Results showed that the maximum breaking load and the percentage extension at break decreased with the increase in GL. Rectangular specimens showed a 30% decrease in maximum breaking load and a 13% decrease in percentage extension at break, while dumbbell specimens showed reductions in the order of 28 and 6%, respectively, as the GL increased from 9.53 cm to 23.5 cm. Highly varying supramolecular architecture of the collagen matrix and the frictional slippage caused by the free ends present in the collagen fibrils, which induce a weak‐link effect similar to the one found in cotton fibers and yarns, are considered to be the probable reasons for this behavior. A limited scanning electron microscopic study has been undertaken to pictorially represent the breakage of leather at different GLs. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 101: 1202–1209, 2006     

Anomalous Ti SALICIDE gate to source/drain shorts induced by dry Sietch during TiSi2 local interconnect formation

A new failure mode was observed in a 0.5 μm version of the silicided amorphous-silicon contact and interconnect (SAC) technology. Massive PMOS gate to source/drain shorts were found. The cause is attributed to formation of Ti during the Si etch. The fluorinated Ti surface fails to form adequate TiN diffusion barrier during subsequent rapid thermal annealing (RTA) in N₂ or NH₃ ambient. Si diffuses from the polycrystalline Si gate and/or the p-type source/drain onto the spacer, reacts with Ti and forms resistive leakage paths. A blanket low-dose, low-energy As implant prior to Ti deposition corrects this problem without adversely changing device characteristics     

A multivariate double EWMA process adjustment scheme for drifting processes

The “predictor-corrector” feedback controller, a process adjustment scheme proposed for semiconductor manufacturing run-to-run processes that drift, is extended to the multiple-input-multiple-output case. The controller is based on two coupled multivariate Exponentially-Weighted-Moving-Average (EWMA) equations, thus its performance depends on the choices of EWMA weight matrices. Stability conditions are given for a pure gain process adjusted with a MIMO double EWMA (EWMA) controller. It is shown that the stability conditions are invariant with respect to various realistic drift disturbance models. Recommendations on how to choose the EWMA weight matrices are given. An analysis is conducted to assess the impact of errors in the estimates of the process gains. The proposed MIMO EWMA feedback controller is compared to the common practice of using multiple single-input-single-ouput dEWMA controllers running in parallel.     

CMOS-compatible fabrication of room-temperature single-electron devices

Devices in which the transport and storage of single electrons are systematically controlled could lead to a new generation of nanoscale devices and sensors. The attractive features of these devices include operation at extremely low power, scalability to the sub-nanometre regime and extremely high charge sensitivity. However, the fabrication of single-electron devices requires nanoscale geometrical control, which has limited their fabrication to small numbers of devices at a time, significantly restricting their implementation in practical devices. Here we report the parallel fabrication of single-electron devices, which results in multiple, individually addressable, single-electron devices that operate at room temperature. This was made possible using CMOS fabrication technology and implementing self-alignment of the source and drain electrodes, which are vertically separated by thin dielectric films. We demonstrate clear Coulomb staircase/blockade and Coulomb oscillations at room temperature and also at low temperatures.     

Analytical optical solution of the extension of the depth of field using cubic-phase wavefront coding. Part II. Design and optimization of the cubic phase

In this paper we use our derived approximate representation of the modulation transfer function to analytically solve the problem of the extension of the depth of field for two cases of interest: uniform quality imaging and task-based imaging. We derive the optimal result for each case as a function of the problem specifications. We also compare the two different imaging cases and discuss the advantages of using our optimization approach for each case. We also show how the analytical solutions given in this paper can be used as a convenient design tool as opposed to previous lengthy numerical optimizations.