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Optimization of starting regimes of industrial plasmatrons is considered. Dependences of the surface temperature in the bath with liquid metal on the inputted specific power are obtained. These dependences may be used for determining the optimal melting conditions and calculating the kinetic regimes for refining metals.  相似文献   
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The results of morphological study of B- and T-cellular immunoblast baboon lymphomas are presented. Differences are found both in the structure of tumour cells and in the histostructure of tumours as a whole. The tumor cells of B-immunoblastic lymphomas expressed mainly IgM. The tumour cells of certain T-immunoblastic lymphomas being investigated by means of monoclonal OKT4 antibodies had a surface phenotype peculiar to T-helper cells.  相似文献   
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The mechanism and kinetics of β-Ta2O5 chlorination, mixed with sucrose carbon, have been studied by a thermogravimetric technique. The investigated temperature range was 500 °C to 850 °C. The reactants and reaction residues were analyzed by scanning electronic microscopy (SEM), X-ray diffraction (XRD), and Brunauer-Emmett-Teller method for surface area (BET). The effect of various experimental parameters was studied, such as carbon percentage, temperature, chlorine partial pressure, and flow, use of the multiple sample method, and carbon previous oxidation. The carbon percentage and previous treatment have an effect on the system reactivity. The temperature has a marked effect on the reaction rate. In the 500 °C to 600 °C temperature interval, the apparent activation energy is 144 kJ/mol of oxide, while at higher temperatures, the activation energy decreases. With high chorine partial pressures, the order of reaction is near zero. The kinetic contractile plate model, X=kt, considering carbon oxidation as the controlling stage, is the one with the best fit to the experimental data. A probable mechanism for the carbochlorination of β-Ta2O5 is proposed: (1) activation of chlorine on the carbon surface, (2) chlorination of Ta2O5, (3) oxidation of carbon, and (4) recrystallization of β-Ta2O5.  相似文献   
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Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold  相似文献   
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