Improvement of Subthreshold Characteristics of Dopingless Tunnel FET Using Hetero Gate Dielectric Material: Analytical Modeling and Simulation

An improved subthreshold analytical model of Dual Material Double Gate Junctionless Tunnel FET (DMDG JLTFET) with stacked / hetero-dielectric gate oxide structure is proposed. The stacked gate oxide structure comprises of Silicon-dioxide (SiO₂) and Titanium Oxide (TiO₂). The high-K gate stack engineered device overcomes the Short Channel Effects (SCEs) caused by the ultrathin silicon devices. The subthreshold analysis is carried out by solving a two-dimensional Poisson’s equation using Parabolic approximation method. These characteristics are analyzed against various device parameters. Also, the impact of different high-K gate oxide materials with SiO₂ is also studied. A comparative analysis of short channel effects for DMDG TFET and DMDG JLTFET has been carried out. The results reveal that the proposed device provides better I_ON current, low leakage current and improved Transconductance-to-drain current ratio. Using TCAD Sentaurus device simulator, the subthreshold analytical model results have been simulated and verified with other TFET models.

     

Remarks on comparison between real and power optimisation methodsfor arrays synthesis of antennas

In `Comparison between real and power optimisation methods for arrays synthesis of antennas', published in volume 32, issue 2 of Electronics Letters Eclercy et al. have shown interesting results concerning the difference between the real and power synthesis of linear array patterns. The authors will show that using some known results, it is possible to explain the conclusions mentioned in that Letter     

Threshold voltage roll-up/roll-off characteristic control insub-0.2-μm single workfunction gate CMOS for high-performance DRAMapplications

Threshold voltage (V_t) roll-off/roll-up control is a key issue to achieve high-performance sub-0.2-μm single workfunction gate CMOS devices for high-speed DRAM applications. It is experimentally confirmed that a combination of well RTA and N₂ implant prior to gate oxidation is important to reduce V_t roll-up characteristics both in nFET and pFET. Optimization of RTA conditions after source/drain (S/D) implant is also discussed as a means of improving V_t roll-off characteristics. Finally, the impact of halo implant on V_t variation in sub-0.2-μm buried channel pFETs is discussed. It is found that halo profile control is necessary for tight V_t variation in sub-0.2-μm single workfunction gate pFET     

Application of rectangular and elliptical dielcore feed horns toelliptical reflector antennas

The pattern characteristics of elliptical reflector antennas are investigated when they are fed by rectangular and elliptical horns partially filled with a dielectric. The bandwidth characteristics of these dielcore horns are superior to those of their corrugated horn counterparts. Representative reflector patterns are computed to properly demonstrate the utility of these feeds for reflector antennas with elliptical apertures. This reflector antenna exhibits high efficiency and low cross polarization, and may be suitable for radar and satellite antenna applications. The antenna configuration may become useful in relatively small antennas where more than 10% cross-polar bandwidth is required. The efficient dielcore horns may also be used as feeds for elliptical nonshaped dual-reflector antennas     

Higher order mode coupling effects in the feeding waveguide of a planar slot array

The effect of internal higher order modes in the feeding waveguide of a planar slot array is investigated. Both the centered-inclined coupling slot and the longitudinal-transverse coupling slot are considered. Method of moments solutions to pertinent coupled integral equations are investigated for arrays of coupling slots of the centered-inclined and longitudinal-transverse types between a main waveguide and crossed branch waveguides. It is demonstrated that, by including the TE/sub 20/ mode coupling in the analysis, most of the higher order mode effects can be accounted for in reduced height waveguides, whereas in waveguides of standard height there may be a small additional effect arising from the TE/sub 01/ mode coupling.<>     

On the Presence of Cu1+ in the Superconducting (Hg,M)Sr2CuO4+δ; M = Cr, Mo, or Re

The Cu K-edge measurements on the optimum T _c 1201 compounds (Hg_1?x M _x )Sr₂CuO_4+δ (M = Cr, Mo, or Re; 0.10 ≤ x ≤ 0.30) show besides Cu²⁺ (predominant) a very weak but distinct signature of Cu¹⁺, only in the superconducting (SC) samples. The Cu¹⁺ feature is conspicuously absent when these compositions are non-superconducting because of different processing conditions. Our finding of monovalent Cu in SC (Hg,M)/Sr-1201 favors the presence of Cu at the Hg-site and this seems to facilitate superconductivity in these cuprates.     

SIMS study of effect of Cr adhesion layer on the thermal stability of silver selenide thin films on Si

Effect of heat treatment on silver selenide films grown from diffusion-reaction of Ag and Se films on Cr-buffered Si substrates was investigated up to 400 °C. X-ray diffraction (XRD), Scanning electron microscopy (SEM), Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) were used to characterize the films. XRD patterns of the films showed stress assisted change in preferential orientation of the films upon annealing: the films annealed at 200 °C exhibited a strong orientation along (2 0 0) plane, which changed to (0 1 3) after annealing at 300 and 400 °C. Dynamic SIMS measurements showed that Cr is confined to the interface and that there is no diffusion of Cr into silver selenide.     

Mutated Cleavages of Images for Stealth Disclosure: A Hopfield Neural Network Attractor (HNNA) Approach

Neural Processing Letters - Multimedia data encryption is an ever-growing and challenging domain in the emerging digital world, with image encryption at the forefront to provide privacy for the...     

Preparation and characterization of BaTiO3–natural muscovite composites

Journal of Materials Science: Materials in Electronics - Natural muscovite (nM) exhibiting magnetic vortex states are ball milled into fine powder and mixed in different relative ratios (weight %)...