开窗侧钻小井眼试采工艺的现场应用

在已开发的油区内对产能衰竭的老井实施开窗侧钻小井眼工艺,可使低效、无效采油井（死井）复活,其经济效益十分可观,有较高的研究价值和推广应用前景。由于小井眼的井径较常规井径减小,相应地要求完井、采油的井下工具及工艺技术进行改进,以适应小油套管尺寸所带来的特殊需要。介绍了针对１０１．６ｍｍ小井眼试验井井况研制的相关井下工具及试采工具组合施工作业、试采等情况。     

薄膜AlGaInP发光二极管中不同反光镜的研究

本文计算了GaP/Au 反光镜, GaP/SiO2/Au 三层ODR and GaP/ITO/Au 三层ODR的反射率随角度的变化值。制作了GaAs衬底的AlGaInP LED,Au反光镜、SiO2 ODR和ITO ODR的薄膜AlGaInP LED。在20mA下,四种样品光输出功率分别为1.04mW, 1.14mW, 2.53mW and 2.15mW。制作工艺退火后,Au扩散使Au/GaP反光镜的反射率降至9％。1/4波长的ITO和SiO2透射率不同造成了两种薄膜LED光输出功率不同。ITO ODR中加入Zn可以大大降低LED的电压,但并不影响LED的光输出。     

Improved Automatic Filtered Power Control Pumping Method for Uniform Shortpass Band in Optical Fiber Communications

To form a low noise figure and uniform shortpass band in optical fiber communications an improved automatic filtered power control (AFPC) pumping method is proposed here. A modulated single laser signal was entered in a closed feedback loop, in which the erbium-doped fiber amplifier (EDFA) was used as a part of the AFPC loop. Owing to the constant filtered signal and the quadrature phase shift delay inside the feedback loop, an optical pass band was uniformly formed. This EDFA attains high performance with a low noise figure simultaneously. The method was successfully applied to the fabrication of practical 12.0 m length of erbium-doped fiber pumped at 980 nm wavelength and 20 dBm power. Experiments prove that the signal gain of the loop remain flat in the range of 18.2 to 22.4 dB with a worst case error of ±0.5 dB and the noise figure was reduced by 2.2 dB at optimal, which correspond to a shortpass range of 40 nm band pass from 1525 nm to 1565 nm in wavelength. Of course, it should be possible to extent the system performance to all pumping configurations for semiconductor optical amplifiers. This provides the simplest and most economical way to transmit a well-defined band of modulated laser signal and to reject all other unwanted radiation.     

未来弹性与AES

介绍了未来弹性的概念,对将未来弹性引入AES评估标准的优点进行了探讨,以来来弹性的观点分析了第二轮AES候选算法的遴选并提出了具体建议。     

循环码的周期分布的新的计算公式

本文在［１］文的基础上进一步分析了循环码的周期分布的性质，给出了新的计算方法和公式，并且确定了一些熟知的循环码的周期分布。     

用远红外HCN激光干涉仪测量等离子体电子密度

在大多数托克马克上，远红外激光干涉仪是等离子体诊断中的一种重要的装置。本文介绍了用远红外ＨＣＮ激光干涉仪测量等离子体电子密度的原理和激光干涉仪结构，并给了了首次在我国第一以大型超导托克马克ＨＴ－７装置上测到的中心弦等离子体电子平均密度。     

QoS Performance Bounds and Efficient Connection Admission Control for Heterogeneous Services in Wireless Cellular Networks

Quality-of-Service (QoS) performance and connection admission control (CAC) for heterogeneous services in wireless multiple access networks are investigated. The heterogeneous services include constant bit rate (CBR), variable bit rate (VBR) and available bit rate (ABR) services. Multiple access control is handled by a polling-based scheme with non-preemptive priority. Tight delay variation (jitter) bounds for CBR connections and delay bounds for VBR connections are derived. A CAC scheme based on the derived bounds is developed. The CAC makes use of user mobility information to reserve an appropriate amount of system resources for potential handoff connections to achieve low handoff connection dropping rate (HCDR). Simulation results show that the proposed CAC scheme can achieve both low HCDR and high resource utilization.     

Te掺杂超宽带隙隧穿结研究

研究制备得到峰值电流密度为65.3A/cm2的GaInP/AlGaAs宽带隙隧穿结和峰值电流密度为6.1A/cm2的AlGaInP/AlGaAs超宽带隙隧穿结。在隧穿结中使用二乙基碲（DETe）作为n型掺杂剂,实验中研究了材料生长温度、阀门开关处理以及DETe的流量等生长参数。采用预掺杂和升温后处理的方式来解决碲源的开关效应,而Te掺杂引入的晶格失配采用应力平衡技术来消除。另外研究了不同DETe流量下制备得到的隧穿结性能。     

Interface Reaction Between Electroless Ni–Sn–P Metallization and Lead-Free Sn–3.5Ag Solder with Suppressed Ni3P Formation

The voids formed in the Ni₃P layer during reaction between Sn-based solders and electroless Ni–P metallization is an important cause of rapid degradation of solder joint reliability. In this study, to suppress formation of the Ni₃P phase, an electrolessly plated Ni–Sn–P alloy (6–7 wt.% P and 19–21 wt.% Sn) was developed to replace Ni–P. The interfacial microstructure of electroless Ni–Sn–P/Sn–3.5Ag solder joints was investigated after reflow and solid-state aging. For comparison, the interfacial reaction in electroless Ni–P/Sn–3.5Ag solder joints under the same reflow and aging conditions was studied. It was found that the Ni–Sn–P metallization is consumed much more slowly than the Ni–P metallization during soldering. After prolonged reaction, no Ni₃P or voids are observed under SEM at the Ni–Sn–P/Sn–3.5Ag interface. Two main intermetallic compounds, Ni₃Sn₄ and Ni₁₃Sn₈P₃, are formed during the soldering reaction. The reason for Ni₃P phase suppression and the overall mechanisms of reaction at the Ni–Sn–P/Sn–3.5Ag interface are discussed.     

HgCdTe阳极硫化+ZnS钝化膜表面与界面的研究

报道了HgCdTe阳极硫化+ZnS钝化膜表面与界面X射线光电子能谱(XPS)的研究及结果.系统地介绍了HgCdTe阳极硫化+ZnS钝化膜的制备,Br2-CH3OH与HgCdTe化学抛光的反应过程,阳极硫化的化学组成及生长机制.阐述了该钝化结构不同深度的组分分布及其对HgCdTe光伏器件电学特性的影响.