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51.
This paper proposes an all-optical regenerator utilizing a novel all-optical discriminator. The impacts of nonlinearity of optical gates on discrimination performance are estimated. The evaluation of discrimination performance shows that amplified spontaneous emission noise and wave form distortion in optical signals can be effectively suppressed. We experimentally demonstrate the suppression using a low-temperature-grown optical switch up to 10 Gb/s  相似文献   
52.
We numerically studied statistics of the transient response time when switching between periodic attractors obtained through chaos control with a high-frequency injection method in a laser diode that is subject to optical feedback. Each transient response time significantly depends on its position in the starting attractor, whereas the statistical distributions of the response times for many transients are determined almost entirely by the final attractor. The average transient response time is 40 times larger than the round time in the controlled periodic attractors. The transient response time is also strongly affected by the external cavity length. The shortest average transient response time is obtained at a minimum external cavity length and a zero phase difference between the laser field and the feedback light field  相似文献   
53.
An improved design method of Rotman lens antennas   总被引:1,自引:0,他引:1  
A Rotman lens is used to feed a linear array antenna for wideband use. A relationship between design parameters for realizing a Rotman lens has been derived by introducing a new design variable. The design method which minimizes the phase error on the aperture of the linear array antenna has been shown. For large array length, the above phase error due to this method becomes considerably smaller than that due to a conventional method. This improved method makes it possible to design small and low-loss Rotman lens antennas.  相似文献   
54.
A theory which takes account of the two dimensional waveguide structure of the distributed-feedback (DFB) laser is presented. Laser threshold conditions in the case of no external reflections are calculated for a three-layer model in which one cladding layer has a periodically changing dielectric constant. In contrast with the coupled-wave theory the threshold conditions are found to be asymmetric with respect to the Bragg frequency. The longitudinal mode which lies below and nearest the Bragg frequency has the lowest threshold gain. The difference between the threshold gains of the two adjacent longitudinal modes straddling the Bragg frequency has a maximum as a function of the coupled strength of the grating  相似文献   
55.
A real-time system large-scale-integrated circuit (LSI) for digital video cassette recorder (DVCR) encoding/decoding and MPEG-2 decoding is implemented on a dual-issue RISC processor (DRISC) with dedicated hardware optimized for video-block processing. The DRISC achieves 972-MOPS software performance and can execute fixed-length data processing at the block level as well as processing at the macro-block level and above for the DVCR/MPEG-2. The dedicated hardware for variable-length coding/decoding can encode and decode codes for both the DVCR and the MPEG-2 by changing translation tables. The dedicated hardware for video-block loading can process video-block data transfers with half-pel operations. The LSI size is 7.7×7.2 mm2 in a 0.25-μm CMOS process  相似文献   
56.
This paper describes the scaling limitation factors of ONO interpoly dielectric thickness, mainly considering the charge retention capability and threshold voltage stability for nonvolatile memory cell transistors with a stacked-gate structure, based on experimental results. For good intrinsic charge retention capability, either the top- or bottom-oxide thickness should be greater than around 6 nm. On the other hand, a thicker top oxide structure is preferable to minimize degradation due to defects. It has been confirmed that a 3.2 nm bottom-oxide shows detectable threshold voltage instability, but 4 nm does not. Effective oxide thickness scaling down to around 13 nm should be possible for flash memory devices with a quarter-micron design rule  相似文献   
57.
A Group 3 error-free facsimile terminal for use in an analog cellular network has been developed. This facsimile terminal is provided with the International Telecommunication Union (ITU-T, formerly CCITT) T.30 recommendation protocol and an adaptive error control scheme (AECS) for Group 3 communication and error-free communication. The AECS monitors the channel conditions and selects the optimum error correction code. The ITU-T V.27ter is used as the modulation method and the transmission rate is 4800 bps. This system is compatible with the modified Huffman (MH), modified READ (MR), and modified modified READ (MMR) image data compression codes. The average communication time of this facsimile terminal is 40 s per page while moving through the analog cellular network  相似文献   
58.
Frequency-shifted feedback (FSF) laser exhibits outstanding features in its oscillation spectrum. We analyze build-up dynamic properties of the FSF laser by means of rate equation and analyze steady-state dynamic properties of the FSF laser by means of Wigner-Ville distribution of intracavity electric field. Furthermore, we analyze instantaneous oscillation frequency at peak spectral intensity and oscillation bandwidth of its spectrum using the formula of instantaneous spectral intensity derived from Wigner-Ville distribution of intracavity electric field. These analytical results are in good agreement with the experimental ones which have been observed by a diode-pumped Nd:YVO4 FSF laser. It becomes clear that the FSF laser supports many frequency components simultaneously even though the gain medium is homogeneously broadened and has a continuously chirped frequency components of comb in which the creation of chirped frequency components are strongly correlated in phase because of a replica of the preceding components. Also, the instantaneous oscillation frequency is closely related to the detuning frequency which depends on the total net gain in the cavity and the gain bandwidth of atomic transition. The oscillation bandwidth is defined as the product of the saturation-broadened bandwidth and the total resonant modes contributing to FSF operation  相似文献   
59.
A VHF omnidirectional radio range (VOR) is a navigation aid radio beacon facility, which provides aircraft with azimuth information relative to the VOR station in question as the origin. In Japan, two types of VOR-the conventional type (referred to as a CVOR) and the Doppler type (referred to as a DVOR)-are currently in use. An element known as the Alford loop antenna (ALA), which changes the loading reactance, is used for the VOR because the horizontally polarized wave and nondirectivity in the horizontal plane are preferred. A VOR antenna consists of a carrier antenna and a sideband antenna-an aircraft receives separate signals from these two antennas and compares them to obtain azimuth information. The mutual coupling between the elements forming the carrier and the sideband antenna affects the directivity of the single elements, resulting in errors in azimuth information. With the mutual coupling between the antenna elements being taken into consideration, a quantitative calculation was made by using the moment method-the results of the calculation made it clear that a loading reactance value of -320 Ω is better to make not mutually coupled elements nondirectional while a loading reactance value of -600 Ω is optimum to minimize the azimuth error of a CVOR  相似文献   
60.
This paper presents a motion estimation and compensation large scale integration (LSI) for the MPEG2 standard. An embedded RISC processor and special hardware modules enable the LSI to achieve a sufficient ability to perform real-time operation and provide the availability to realize many kinds of block matching algorithms. Using a three-step hierarchical telescopic search algorithm, a single chip accomplishes real-time motion estimation with search ranges of ±32.5×±32.5 pixels for motion vectors. The chip was fabricated using 0.5-μm CMOS technology and has an area of 16.5×16.5 mm2 and 2.0 M transistors  相似文献   
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