Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd.     

NRZ operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser

NRZ operation at 40 Gb/s has been successfully performed using a very compact module of a multiple-quantum-well (MQW) electroabsorption modulator integrated with a distributed-feedback (DFB) laser. While the DFB laser is injected with a constant current, the integrated MQW electroabsorption modulator is driven with a 10-Gb/s electrical NRZ signal. A clearly opened eye diagram has been observed in the modulated light from the modulator. And a receiver sensitivity of -27.2 dBm at 10/sup -9/ has been experimentally confirmed in the bit-error-rate (BER) performance.     

Ortho-deuterium Raman laser using the S0(2) rotationaltransition in the mid-infrared region

Based on a calculation for the Raman gain coefficient of the S₀(2) transition in ortho-D₂, we have demonstrated the generation of first Stokes waves in the 15-16-μm spectral region. Use of ortho-D enriched by a catalytic converter enabled us to realize efficient conversion at room temperature. Stokes energies as high as 400 mJ were obtained     

Analysis of TE and TM modes in DFB lasers by two-dimensional theory

The two-dimensional theory of a distributed feedback (DFB) laser (which was previously presented and applied to the analysis of the laser threshold conditions for the transverse-electric (TE) mode in a simple three-layer waveguide structure) is developed to treat both TE and transverse-magnetic (TM) modes in a four-layer waveguide structure with a thin grating layer, which more closely reflects actual DFB laser structure. The differences between TE and TM modes for the dispersion relations and the laser threshold conditions are clarified. The effects of the waveguide structure (including grating layer thickness, refractive indexes of layers, coupling constant, and corrugation period) on the threshold gains and the gain differences between the two longitudinal modes on both sides of the Bragg frequencies are studied in detail for both TE and TM modes     

Recovery of 80 GHz optical clock from 160 Gbit/s data using regeneratively modelocked laser diode

An 80 GHz optical clock signal was successfully recovered from a 160 Gbit/s data stream using a regeneratively modelocking scheme of a semiconductor modelocked laser (MLLD). To handle an 80 GHz electrical signal, the MLLD integrated with a high-mesa electroabsorption modulator and a W-band UTC-PD module are used in this scheme.     

40 Gbit/s electroabsorption modulators with impedance-controlled electrodes

A novel travelling-wave electroabsorption optical modulator, electrically matched for 50 /spl Omega/ loads of driving circuit drivers, was developed. The scattering parameter of electric reflection (S/sub 11/) from this modulator is less than -20 dB at 20 GHz. It can thus enable a 40 Gbit/s, 2 km SMF transmission with a 0.3 dB penalty at a 1.3 /spl mu/m wavelength.     

Interaction of Fragrance Materials With 2-Hydroxypropyl-beta-Cyclodextrin by Static and Dynamic Head-space Methods

The stability constants for the inclusion of fragrance materials with 2-hydroxypropyl-beta-cyclodextrin (2HP-beta-C yD) in aqueous solution have been determined by the static head-space method. The 1:1 stability constants obtained by this method were in reasonable agreement with the corresponding values in the literature. In addition, the release profiles of fragrance materials from 2HP-beta-CyD aqueous solution were investigated using the dynamic head-space method. It was found that the suppression of the fragrance materials release was dependent on their stability constants.     

An improved design method of Rotman lens antennas

A Rotman lens is used to feed a linear array antenna for wideband use. A relationship between design parameters for realizing a Rotman lens has been derived by introducing a new design variable. The design method which minimizes the phase error on the aperture of the linear array antenna has been shown. For large array length, the above phase error due to this method becomes considerably smaller than that due to a conventional method. This improved method makes it possible to design small and low-loss Rotman lens antennas.     

Stimulated Raman amplification of 1.6-μm-band pulsed light inoptical fibers

A synchronous Raman fiber amplifier is proposed which is pumped at a wavelength around 1.55 μm by output pulses from an erbium-doped fiber amplifier. This arrangement achieves an output optical peak power exceeding 200 mW and a 3-dB net gain bandwidth of 33 nm around 1.66 μm. The Raman fiber amplifier is useful for 1.6-μm-band OTDR as it can be used in live maintenance of optical transmission networks     

A 54×54-b regularly structured tree multiplier

A 54-b×54-b parallel multiplier was implemented in 0.88-μm CMOS using the new, regularly structured tree (RST) design approach. The circuit is basically a Wallace tree, but the tree and the set of partial-product-bit generators are combined into a recurring block which generates seven partial-product bits and compresses them to a pair of bits for the sum and carry signals. This block is used repeatedly to construct an RST block in which even wiring among blocks included in wire shifters is designed as recurring units. By using recurring wire shifters, the authors can expand the level of repeated blocks to cover the entire adder tree, which simplifies the complicated Wallace tree wiring scheme. In addition, to design time savings, layout density is increased by 70% to 6400 transistors/mm², and the multiplication time is decreased by 30% to 13 ns