Melt spinning and metal chloride vapor curing process on polymethylsilsesquioxane as Si?O?C fiber precursor

Melt spinning process of polymethylsilsesquioxane (PMSQ) at 403–453 K was investigated as a Si? O? C fiber precursor in terms of averages and distributions of spun fiber diameters. Because of fusible character of PMSQ at low temperature, the spun fibers were exposed to vapors of various metal chlorides (SiCl₄, Si(CH₃)Cl₃, TiCl₄, and BCl₃) to promote the fiber curing. Cured fibers were investigated by FTIR and TG analyses. In a case of the fiber synthesized with SiCl₄ curing, tensile tests on the pyrolyzed fibers were performed. Exposure of the synthesized fiber at high temperature with a flame of an oxygen‐gas burner was examined. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

为快速ADC提供电压箝位与DC偏置模拟电路

许多快速ADC都推荐0.6V-2.6V输入电压范围,如美国国家半导体公司的ADC1175（参考文献1）。但在某些应用中,必须要转换一个对称的模拟输入信号。本设计实例中的电路将一个-0．2V－＋0．2V范围的对称输入电压转换到推荐的0．6V－2．6V范围（图1）。该电路亦能防止输出电压低于-0.3V,以防止损坏ADC。     

Lacticaseibacillus paracasei K71 Alleviates UVB-Induced Skin Barrier Dysfunction by Attenuating Inflammation via Increased IL-10 Production in Mice

Scope

Ultraviolet B (UVB) radiation causes skin barrier dysfunction, leading to decreased water-holding capacity, impaired epidermal barrier function, and increased skin thickness. This study investigates the protective effects of oral administration of Lacticaseibacillus paracasei K71 against skin barrier dysfunction in UVB-irradiated mice.

Methods and results

Mice are fed diets with or without K71 and irradiated with UVB three times a week for 12 weeks. Oral administration of K71 suppresses UVB-induced decrease in stratum corneum water content, mitigates the increase of transepidermal water loss, and decreases epidermal thickness of the dorsal skin. Treatment with K71 reverses the upregulation of inflammatory cytokines and the activation of nuclear factor-κB induced by UVB irradiation and upregulates the expression of anti-inflammatory IL-10 in the dorsal skin. Notable upregulation of IL-10 is observed in the spleens of K71-treated mice. K71 treatment enhances IL-10 production in J774.1 macrophages; however, this enhancement is diminished by inhibiting K71 phagocytosis and TLR3. Furthermore, transfection using K71 RNAs significantly increases IL-10 production.

Conclusion

These results indicate that K71 may alleviate UVB-induced skin barrier dysfunction by attenuating inflammation via increasing IL-10 production and that K71 RNAs may induce IL-10 production in macrophages. Therefore, K71 may be beneficial for preventing skin barrier dysfunction.     

Melt-spinning and the thermal decomposition of mixed polymers containing polysilsesquioxane and polycarbosilane

Journal of Materials Science - We attempted melt-spinning and investigated the compatibility and thermal decomposition of a mixture comprising polysilsesquioxane and polycarbosilane for the purpose...     

Characterization of nickel manganite NTC thermistor films prepared by aerosol deposition at room temperature

NiMn₂O_4+δ thermistor thick films have been successfully deposited by the so-called Aerosol Deposition Method (ADM) at room temperature on alumina substrates, Si-wafers, as well as on special planar four-wire interdigital electrode structures for high-precision electrical characterization. The NTCR films are homogeneous, completely dense and scratch resistant. Both as-deposited and tempered, the NTCR films exhibit a cubic spinel structure. Between 25 °C and 90 °C, the NTCR film resistance behaves as it is typical for variable range hopping (VRH) with parabolic density of states. As a result of moderate film tempering, the thermistor constant B and the specific resistance at 25 °C (ρ₂₅) decrease from 4250 K to 4020 K and 65 Ω·m to 40 Ω·m respectively, and are close to bulk values. In combination with the excellent reproducibility of the ρ₂₅ and B values, AD processing of films appears to be a promising alternative for classical ceramic bulk processes.     

Progress in pressureless sintering of boron carbide ceramics – a review

ABSTRACT

Boron carbide (B₄C) ceramics has many outstanding performance, such as extremely high hardness, low density, high melting point, high elastic modulus, high thermoelectromotive force, high chemical resistance, high neutron absorption cross section, high impact and excellent wear resistance. Therefore, B₄C ceramics can be used in various industrial applications, such as lightweight ceramic armour, high temperature thermocouples, neutron absorber, reactor control rods in nuclear power engineering, polishing media for hard materials, abrasive media for lapping and grinding, and wear resistant components (blasting nozzles, die tips and grinding wheels). Pressureless sintering is the method with industrialised application value for B₄C ceramics, however, it is impossible to sinter pure B₄C ceramics to high densities without additives by pressureless sintering. So sintering additives must be used to promote the densification of B₄C ceramics. The different sintering additives used to promote the densification of boron carbide will be described in this review, including carbon additives, metallic additives, oxide additives, non-oxide additives, combined additives and rare earth oxide additives. Finally, the recent research trends for sintering methods and sintering additives of B₄C ceramics will also be proposed.     

Quantitative evaluation of malignant gliomas damage induced by photoactivation of IR700 dye

The processes involved in malignant gliomas damage were quantitatively evaluated by microscopy. The near-infrared fluorescent dye IR700 that is conjugated to an anti-CD133 antibody (IR700-CD133) specifically targets malignant gliomas (U87MG) and stem cells (BT142) and is endocytosed into the cells. The gliomas are then photodamaged by the release of reactive oxygen species (ROS) and the heat induced by illumination of IR700 by a red laser, and the motility of the vesicles within these cells is altered as a result of cellular damage. To investigate these changes in motility, we developed a new method that measures fluctuations in the intensity of phase-contrast images obtained from small areas within cells. The intensity fluctuation in U87MG cells gradually decreased as cell damage progressed, whereas the fluctuation in BT142 cells increased. The endocytosed IR700 dye was co-localized in acidic organelles such as endosomes and lysosomes. The pH in U87MG cells, as monitored by a pH indicator, was decreased and then gradually increased by the illumination of IR700, while the pH in BT142 cells increased monotonically. In these experiments, the processes of cell damage were quantitatively evaluated according to the motility of vesicles and changes in pH.     

What Happens during Thermal Post-Treatment of Powder Aerosol Deposited Functional Ceramic Films? Explanations Based on an Experiment-Enhanced Literature Survey

Powder aerosol deposition (PAD) is a unique ceramic spray coating method that produces dense and well-adhering thick-films directly at room temperature, without requiring any heating or sintering. After the successful film formation, mechanical film properties like hardness or plasma resistance are remarkably good. However, when it comes to electrical properties like permittivity or electrical conductivity, the nanocrystalline structure of PAD films combined with high internal strains deteriorates partly the characteristic properties. The electrical conductivity may already be present within the as-deposited films. However, it is mostly lowered by several orders of magnitude. Therefore, a thermal post-deposition annealing is oftentimes required. In this work, electrically conducting films produced by powder aerosol deposition are surveyed based on published data. Their microstructural and electrical behavior during the post-deposition annealing treatment is summarized and reasons for the lowered electrical conductivity are identified. Additionally, the processes taking place during annealing, which eventually allow to regain bulk-like functional properties, are examined. A universal annealing behavior is found that leads to a quantitative recommendation for the suitable film annealing temperatures to regain the electrical conductivities.     

Assessing and discovering parallelism in C$$$$ code for heterogeneous platforms

Massively parallel architectures are mainly based on a parallel heterogeneous setup. They are composed by different computing devices that speed up specific code regions, named kernels. These kernels are usually executed offline in the corresponding devices. Porting applications to a specific heterogeneous platform is a costly task in terms of time and human resources. The key points in the porting process are the manual analysis of the source code and kernel detection. Each device of these heterogeneous platforms has their own restrictions, such as the memory allocation support. Kernels must be mapped with suitable computing devices. We introduced AKI as an automatic kernel identification and annotation tool that aims to identify potential kernels on C\(++\) sequential applications. AKI identifies those kernels that can be offlined on heterogeneous computing devices. To annotate these kernels, REPARA C++ attributes have been defined. This annotation mechanism can aid future automatic source-to-source transformation tools to facilitate the work for parallel heterogeneous platforms. AKI has been evaluated over all benchmarks included in the NAS suite. The benchmark suite incorporates a big set of realistic high performance applications. The evaluation results demonstrate that AKI is a competitive solution for identifying and annotating parallel code fragments (aka kernels).     

Nitridation enhancing effect of ZrO2 on silicon powder

The nitridation behavior of silicon powder with added Zr compounds was studied in order to assess the catalytic effect of zirconium on the formation of reaction bonded silicon nitride, using high purity silicon powder and monoclinic zirconia as starting materials. Thermogravimetric analysis revealed that the addition of ZrO₂ to Si powder reduced the temperature of the main nitridation reaction, and increased the amount of silicon converted to silicon nitride at a given temperature. On the other hand, the nitridation rate at higher temperatures (1380-1400 °C) indicated similar values for both pure Si and Si with ZrO₂ additions.