Pre-annealing induced oxide barrier to suppress the over-selenization of Mo contact

Molybdenum (Mo) is commonly used as the back contact material complying well with the formation of an ohmic contact for chalcogenide thin film solar cells. However, the easy formation of an over-thick MoSe₂ layer between the Cu₂ZnSn(S,Se)₄ absorber and Mo back contact significantly deteriorates the device performance. To overcome the degradation, the effects of thermal treatment on Mo layers have been investigated in this paper. It was found that pre-annealing Mo back contacts is effective to control the growth of interfacial MoSe₂ layer during selenization. Moreover, the thickness of MoSe₂ layer could be conveniently tailored by simply varying the pre-annealing temperature. The work provides direct proof that the appearance of a thin MoO₂ layer on the top of annealed Mo film indeed acts as a temporary barrier to block the over-selenization of Mo back contact.     

Synthesis of anisotropic NaNbO<Subscript>3</Subscript> seed crystals and fabrication of textured (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript>-based ceramics

High aspect ratio patelike NaNbO₃ particles with pure perovskite structure have been successfully synthesized by topochemical microcrystal conversion (TMC) from plate-like precursor particles of the layer-structured Bi_2.5Na_3.5Nb₅O₁₈. By changing the Bi_2.5Na_3.5Nb₅O₁₈/Na₂CO₃ ratio, large and thin NaNbO₃ particles with a thickness of approximately 0.5 μm and a width of approximately 20 μm were obtained. The obtained NaNbO₃ particles is quite suitable for fabricating textured (K_0.5Na_0.5)NbO₃-based ceramics. Using the fine platelike NaNbO₃ particles as templates, dense <001> -oriented (K_0.5Na_0.5)NbO₃-0.5 mol %MnO₂ ceramics with high texture quality (Lotgering factor F ₀₀₁ = 87 %) and excellent piezoelectric properties were produced by templated grain growth. Compared with randomly oriented ceramics, textured samples show greatly enhanced properties. The room-temperature strain S, the piezoelectric coefficient d ₃₃ ^* and d ₃₃ reach up to 0.093 %, 233 pm/V and 195pC/N, respectively, which are all about 1.5 times larger than those of non-textured ceramics.     

Comparison of gas sensing properties based on hollow and porous α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanotubes

Hollow and porous α-Fe₂O₃ nanotubes were successfully synthesized by single nozzle electrospinning method followed by annealing treatment. The crystal structures and morphologies of the as-prepared materials were characterized by X-ray diffraction and scanning electron microscopy, respectively. The as-prepared materials were applied to construct gas sensor devices which gas sensing properties were further investigated. The obtained results revealed that porous α-Fe₂O₃ nanotube gas sensors exhibit a markedly enhanced gas sensing performance compared with hollow α-Fe₂O₃ nanotube gas sensors, which was about three times higher to 100 ppm acetone at 240 °C. Interestingly, hollow and porous α-Fe₂O₃ nanotube gas sensors both showed fast response–recovery time and good selectivity, but the porous ones possessed the shorter recovery time. The improved properties could be attributed to the unique morphology of porous nanotubes. Thus, further improvement of performance in metal-oxide-semiconductors materials could be realized by preparation the unique porous structures of nanotubes. Moreover, it is expected that porous metal-oxide-semiconductors nanotubes could be further design as promising candidates for gas sensing materials.     

Ag<Subscript>2</Subscript>S/Bi<Subscript>2</Subscript>S<Subscript>3</Subscript> co-sensitized TiO<Subscript>2</Subscript> nanorod arrays prepared on conductive glass as a photoanode for solar cells

TiO₂ nanorod arrays (TiO₂ NRAs) were synthesized through a hydrothermal method. Ag₂S and Bi₂S₃ were then grown on the surface of TiO₂ NRAs with successive ionic layer adsorption and reaction method. The pristine rutile TiO₂ NRAs, Ag₂S/TiO₂, Bi₂S₃/TiO₂, and Bi₂S₃/Ag₂S/TiO₂ electrodes were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, ultraviolet–visible absorption spectroscopy, and electrochemical analysis. According to photoelectrochemical (PEC) measurement, an enhanced short circuit current density was obtained for the co-sensitized TiO₂ NRAs under simulated sunlight illumination, which was 10.7 times higher than that of the TiO₂ NRAs. Appropriate potential positions of conduction band and valence band of Bi₂S₃ that match well those of rutile TiO₂ NARs and Ag₂S lead to the improved PEC performance. In addition, the PEC property of the co-sensitized TiO₂ NRAs under visible light irradiation was also investigated and showed a dramatically enhanced photocurrent response.     

La<Subscript>1−x</Subscript>Ag<Subscript>x</Subscript>FeO<Subscript>3</Subscript>/halloysites nanocomposite with enhanced visible light photocatalytic performance

La_1?xAg_xFeO₃/halloysites nanotubes (HNTs) nanocomposite was synthesized by sol–gel method. It was characterized by X-ray diffraction, transmission electron microscope, Fourier transform infrared spectroscopy and UV–visible diffused reflectance spectroscopy measurements. The photo-activity of the La_1?xAg_xFeO₃/HNTs nanocomposite was evaluated via degradation of methylene blue (MB) under visible-light irradiation. The results showed that the HNTs with unique pore structure favored the adsorption of organic molecules. Adequate Ag⁺ doping improved the absorption ability for visible light. The La_0.95Ag_0.05FeO₃/HNTs demonstrated the best photocatalytic performance, which achieved as high as 99 % for MB degradation exposed 2 h irradiation. However,further increasing of Ag⁺ doping gradually reduced the photocatalytic activity. The nanocomposite catalyst showed outstanding recyclability after eight cycles which still remained up to 90 %.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Electromigration effect on Sn-58 % Bi solder joints with various substrate metallizations under current stress

The electromigration behavior of low-melting temperature Sn-58Bi (in wt%) solder joints was investigated with a high current density between 3 and 4.5 × 10³ A/cm² between 80 and 110 °C. In order to analyze the impact of various substrate metallizations on the electromigration performance of the Sn-58Bi joint, we used representative substrate metallizations including electroless nickel immersion gold (ENIG), electroless nickel electroless palladium immersion gold (ENEPIG), and organic solderability preservatives (OSP). As the applied current density increased, the time to failure (TTF) for electromigration decreased regardless of the temperature or substrate metallizations. In addition, the TTF slightly decreased with increasing temperature. The substrate metallization significantly affected the TTF for the electromigration behavior of the Sn-58Bi solder joints. The substrate metallizations for electromigration performance of the Sn-58Bi solder are ranked in the following order: OSP-Cu, ENEPIG, and ENIG. Due to the polarity effect, current stressing enhanced the fast growth of intermetallic compounds (IMCs) at the anode interface. Cracks occurred at the Ni₃Sn₄ + Ni₃P IMC/Cu interfaces on the cathode sides in the Sn-58Bi/ENIG joint and the Sn-58Bi/ENEPIG joint; this was caused by the complete consumption of the Ni(P) layer. Alternatively, failure occurred via deformation of the bulk solder in the Sn-58Bi/OSP-Cu joint. The experimental results confirmed that the electromigration reliability of the Sn-58Bi/OSP-Cu joint was superior to those of the Sn-58Bi/ENIG or Sn-58Bi/ENEPIG joints.     

A Microwave Transmission Instrument for Rapid Dry Rubber Content Determination in Natural Rubber Latex

We report the design, implementation and testing of an instrument for rapid dry rubber content (DRC) determination in rubber latex. It is composed of rectangular waveguide antennae, microwave generator, power detector, and microcontroller. According to the theory of microwave transmission, the power loss of microwaves passing through latex is related to the DRC. This attenuation is determined by measuring the transmitted microwave intensity with a power detector. The appropriate frequency that gives the best correlation between DRC and attenuation was found to be about 2.36 GHz. The microwave power measurement is processed by the microcontroller using the empirical calibration equation to estimate DRC in rubber latex. The instrument was tested using new latex samples with various DRC, sampled locally in Songkhla province, Thailand, and the DRC estimates by the instrument were compared to the slow but accurate standard oven-drying results. The estimates had an 0.21 % mean error and R ² = 0.9983, indicating good practical performance.     

An Approach Method to Calibrate the Autocollimator with Small Angle Measurement Range

A new method to calibrate the autocollimator with small angle measurement range has been developed. This method used a system based on rotary encoder for angle measurements with self-calibration function (SelfA47). The SelfA47 has 18,000 graduation lines with angle interval of 0.02°, corresponds to 72 arcsec. Thereby this system cannot be used to calibrate the autocollimator with measurement range <72 arcsec. On the other hand, SelfA47 can be used to calibrate an electronic level. The deviation of electronic level shaped linear gradient. Therefore a small nominal gradient of electronic level can be approximated by interpolation. Since the gradient of a curve corresponds to the angle quantities, it is feasible to calibrate the autocollimator with nominal angle <72 arcsec using SelfA47 and an electronic level. In this proposed method, SelfA47 is placed horizontally on the same plane with electronic level and mirror reflector position. The electronic level value that have been corrected by SelfA47 is used as a reference. This reference value was converted to the angle, thus the angle deviation of autocollimator can be determined. The prominent uncertainty of angle measurement using this new technique derived from the uncertainty of electronic level and rotary encoder. Using this method, the expanded uncertainty of 0.36 arcsec is obtained from calibration of autocollimator with measuring range of ±20 arcsec and it is consistent statistically with the manufacturer calibration result shown by E _n value is <1. In conclusion, this approach method can be applied to calibrate the autocollimator with a resolution smaller than SelfA47 as standard, but it is not recommended for the calibration of highly accurate autocollimator.     

Design and Uncertainty Evaluation of a Strain Measurement System

Strain measurement is very important in various industrial applications as well as different disciplines of science and technology for direct and indirect observations of certain parameters. Designing signal conditioning circuit is always a challenging and important task for satisfactory and reliable performance of a sensor as well as the system. The design and implementation details of a signal conditioning circuit of resistive sensor (strain gauge) for strain measurement are presented in this paper. Also the important aspects in designing a signal conditioning circuit for resistive sensor are presented and a novel method for the measurement of strain is discussed. Quarter bridge configuration with AC voltage excitation is used for the measurement along with the necessary circuitry to get a suitable and measurable output DC voltage. The measurement system is calibrated using a cantilever of stainless steel and the details of calibration are presented in the paper. The uncertainty associated with the measurement system is evaluated.