Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

We present a junction temperature analysis of GaInN/GaN quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro-Raman spectroscopy. The temperature was measured up to a drive current of 250 mA (357 A/cm²). We find better cooling efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire substrates we find values as high as 425 K/W. Poor thermal performance in the latter is attributed to the low thermal conductivity of the sapphire. Three-dimensional finite-element simulations show good agreement with the experimental results, validating our thermal model for the design of better cooled structures.     

GaN1-xPx三元合金的红外谱

对GaN1-xPx三元合金进行了红外谱的测试和拟合. 分析结果表明在GaN1-xPx三元合金中存在两个彼此竞争的机制制约着载流子浓度的变化. 一个是来自等电子陷阱的影响，它将减少三元合金中载流子的浓度；另一个来自缺陷的影响，它将增加三元合金中载流子的浓度. 对合金介电函数的倒数的虚部进行了计算，其结果显示，随着合金中P组分比的增加，纵向光学声子-等离激元（LPP）耦合模式向高频方向移动，同时LPP模式线宽逐渐增宽，说明随着合金中P组分比的增加，LPP模式的耦合作用增加，阻尼增强.     

GaN外延材料中持续光电导的光淬灭

研究了非故意掺杂和掺Si的n型GaN外延材料持续光电导的光淬灭.实验发现,非故意掺杂GaN的持续光电导淬灭程度远大于掺Si的n型GaN;撤去淬灭光后前者的持续光电导几乎没有变化,后者却明显减小;稍后再次加淬灭光,前者的持续光电导仍无变化,而后者却明显增加.作者认为两者持续光电导的形成都与空穴陷阱有关,用空穴陷阱模型解释了非故意掺杂GaN持续光电导的形成以及淬灭过程;掺Si的n型GaN的持续光电导是电子陷阱(杂质能级)和空穴陷阱共同作用的结果,并且在持续光电导发生的不同阶段其中一种陷阱的作用占主要地位.     

End-to-End Rate Adaptation to Support Heterogeneous Services for Infrastructure-Based Vehicular Networks

Vehicle to Infrastructure(V2I) communications aim to provide mobile users on the road low-cost Internet and driver safety services.However, to meet Quality of Service(QoS) requirements of various applications and efficiently utilize limited wireless channel resourc-es, the transport layer protocol has to perform effective rate control in low channel quality and frequent changing topology communica-tion environment. In this paper, we propose a novel rate-control scheme in infrastructure based vehicular networks that avoids conges-tion and starvation and promotes fairness in end-to-end V2I communications. In vehicular networks, a bottleneck roadside unit(RSU)keeps track of its buffer size, aggregate incoming rate, and link throughput, and appropriately allocates bandwidth to traversing flows.With feedback information from the RSU, source nodes dynamically adjust their sending rates to avoid buffer overflow or starvation atthe bottleneck RSU. Simulation results show that the proposed scheme can reduce not only packet losses owing to buffer overflow butalso buffer starvation time, which improves the utilization efficiency of wireless channel resource.     

基站供电变压器被雷击的原因及预防

根据基站变压器防雷击的实际,分析了铁塔接闪时,基站地网上所产生的地电位升,及其对基站变压器的影响;指出该地电位升是基站变压器被“正反变换”损坏的主要原因;提出了预防基站变压器被雷击损坏的方法;此外对基站内SPD的安装位置也提出了明确的要求。     

基于模型和随机矢量生成的LCD控制器的验证

随着集成电路规模的扩大与集成度的提高,芯片功能日趋复杂,验证问题越来越显得突出,传统的验证方法已显示出其缺点.文中首先介绍了传统方法的缺点,然后提出了一种基于模型和随机矢量生成的验证方法,这种方法可以带来诸多的好处,使得大规模集成电路的验证效果得到提高.基于这种方法验证了一款片上系统(SoC)芯片中的液晶显示器(LCD)控制器,给出了具体验证环境与验证步骤,并取得了良好的效果.     

迫弹激光引信用脉冲半导体激光电源的设计与应用

设计了适应于迫弹激光近炸引信的小体积、低电压、窄脉宽、高功率的脉冲半导体激光电源.采用电容充放电的模式,选用高速大功率MOSFET管作为开关,设计了相应的高速开关控制电路.激光电源模块的重复频率高达50kHz,常规热电池供电电压条件下的输出脉冲激光峰值功率为9W,光脉冲上升沿为4.2 ns,光脉宽为10 ns,为有效提...     

自动考勤系统的设计与实现

自动考勤系统从用户和管理员两方面功能入手,对系统总体框架和基本功能分别进行了设计。员工的功能包括查询和输入考勤状态,管理员的主要功能有考勤记录管理、员工加班操作、加班记录管理、记录查询、信息记录打印和系统的登陆、退出等,可以分别对员工的考勤状态进行查询、修改和删除,统计并可以显示当天所有员工的考勤状态[3]。在对每个功能进行设计时,从处理过程和存储等方面进行了详细的论述。系统以jdk1.5为开发环境,用Java语言进行编程[5],该系统操作简单,保证其稳定运行。     

基于CPS的建筑环境数据级检测融合方法

针对建筑环境CPS数据级融合可靠性的问题,采用线性最小方差估计的方法对传统自适应加权融合算法进行改进,不仅减小了均方误差,而且使得融合结果可靠性更高。在数据融合前进行限幅处理,判断数据是否异常,对异常数据的加权因子进行配置处理,既提高了数据的筛选性,又保证了系统数据融合结果的可靠性。仿真实验表明了该方法的有效性。     

Synthesis of Octapod Cu-Au Bimetallic Nanocrystal with Concave Structure through Galvanic Replacement Reaction

We synthesized octapod Cu-Au bimetallic alloy with a concave structure by employing a replacement reaction between AuPPh₃Cl and Cu nanocubes. Using the Cu nanocube as sacrificial templates, we have successfully generated high-active sites on alloy nanocrystals by carefully tuning the replacement reaction and growth. The key is to afford the proper concentration of AuPPh₃Cl-TOP to the reaction solution. When the Au precursor with high concentration is injected into the galvanic replacement reaction, the growth dominated the process and hollowed octapod Cu-Au alloy was obtained. In contrast, when the concentration of the Au precursor is low, the replacement reaction can only take place at the nanocrystals, leading to generate Cu-Au nanocages. This work provides an effective strategy for the preparation of hollow bimetallic nanocrystals with high-active sites.